IN2012DN03051A - - Google Patents
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- Publication number
- IN2012DN03051A IN2012DN03051A IN3051DEN2012A IN2012DN03051A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A IN 3051DEN2012 A IN3051DEN2012 A IN 3051DEN2012A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A
- Authority
- IN
- India
- Prior art keywords
- devices
- growth substrate
- methods
- flexible
- reuse
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24137309P | 2009-09-10 | 2009-09-10 | |
US24137409P | 2009-09-10 | 2009-09-10 | |
US35829810P | 2010-06-24 | 2010-06-24 | |
PCT/US2010/048213 WO2011066029A2 (en) | 2009-09-10 | 2010-09-09 | Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN03051A true IN2012DN03051A (ko) | 2015-07-31 |
Family
ID=44067165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3051DEN2012 IN2012DN03051A (ko) | 2009-09-10 | 2010-09-09 |
Country Status (10)
Country | Link |
---|---|
US (2) | US8378385B2 (ko) |
EP (1) | EP2462631B1 (ko) |
JP (1) | JP5619901B2 (ko) |
KR (1) | KR101714812B1 (ko) |
CN (1) | CN102804408B (ko) |
AU (1) | AU2010325106B2 (ko) |
CA (1) | CA2789391A1 (ko) |
IN (1) | IN2012DN03051A (ko) |
TW (1) | TWI550895B (ko) |
WO (1) | WO2011066029A2 (ko) |
Families Citing this family (56)
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US9040392B2 (en) | 2011-06-15 | 2015-05-26 | International Business Machines Corporation | Method for controlled removal of a semiconductor device layer from a base substrate |
CN103946973A (zh) * | 2011-06-29 | 2014-07-23 | 密歇根大学董事会 | 用于外延层剥离后晶片重新利用的牺牲性蚀刻保护层 |
AU2012280933A1 (en) * | 2011-07-06 | 2014-01-23 | The Regents Of The University Of Michigan | Integrated solar collectors using epitaxial lift off and cold weld bonded semiconductor solar cells |
CN102244134B (zh) * | 2011-08-02 | 2013-05-15 | 厦门市三安光电科技有限公司 | 一种高效四结太阳能电池及其制作方法 |
US8541315B2 (en) * | 2011-09-19 | 2013-09-24 | International Business Machines Corporation | High throughput epitaxial lift off for flexible electronics |
US8916954B2 (en) * | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
US8841161B2 (en) * | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
KR20140128393A (ko) | 2012-02-07 | 2014-11-05 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 에피택셜 리프트 오프 후 웨이퍼 재사용을 위한 열 표면 처리 |
KR20130104974A (ko) | 2012-03-16 | 2013-09-25 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
US20140137930A1 (en) * | 2012-11-16 | 2014-05-22 | Solar Junction Corporation | Multijunction solar cells |
BR112015023736A2 (pt) * | 2013-03-15 | 2017-07-18 | First Solar Inc | método para manufaturar dispositivo fotovoltaico |
CN103346079A (zh) * | 2013-06-07 | 2013-10-09 | 刘凤全 | 一种重复使用的半导体基底及其纯化重复使用方法 |
US10658998B2 (en) | 2013-07-31 | 2020-05-19 | Oepic Semiconductors, Inc. | Piezoelectric film transfer for acoustic resonators and filters |
US10186629B2 (en) | 2013-08-26 | 2019-01-22 | The Regents Of The University Of Michigan | Thin film lift-off via combination of epitaxial lift-off and spalling |
CN103489958B (zh) * | 2013-08-27 | 2015-09-02 | 湖南红太阳光电科技有限公司 | 一种柔性硅基砷化镓电池的制备方法 |
AU2014381597A1 (en) * | 2013-11-11 | 2016-05-26 | The Regents Of The University Of Michigan | Thermally-assisted cold-weld bonding for epitaxial lift-off process |
TW201539971A (zh) | 2013-11-29 | 2015-10-16 | Univ Michigan | 利用剪紙工藝啟發之微結構於平板光伏打面板之自主太陽能追蹤 |
US10535685B2 (en) | 2013-12-02 | 2020-01-14 | The Regents Of The University Of Michigan | Fabrication of thin-film electronic devices with non-destructive wafer reuse |
WO2015156874A2 (en) | 2014-01-15 | 2015-10-15 | The Regents Of The Univerity Of Michigan | Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method |
US10680132B2 (en) * | 2014-01-15 | 2020-06-09 | The Regents Of The University Of Michigan | Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer |
US10141465B2 (en) * | 2014-04-04 | 2018-11-27 | The Regents Of The University Of Michigan | Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators |
KR20160143719A (ko) | 2014-04-04 | 2016-12-14 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 비추적식 소형 복합 파라볼라 집광기와 통합된 에피텍셜 리프트 오프 처리된 GaAs 박막 태양 전지 |
WO2015168272A1 (en) | 2014-04-29 | 2015-11-05 | The Regents Of The University Of Michigan | Flexible antenna integrated with an array of solar cells |
US9786643B2 (en) | 2014-07-08 | 2017-10-10 | Micron Technology, Inc. | Semiconductor devices comprising protected side surfaces and related methods |
CN104241205B (zh) * | 2014-09-18 | 2017-04-26 | 厦门乾照光电股份有限公司 | 一种衬底可剥离的外延结构及其应用 |
US9263626B1 (en) | 2015-01-29 | 2016-02-16 | International Business Machines Corporation | Crystalline thin film photovoltaic cell |
CN107624197A (zh) | 2015-03-18 | 2018-01-23 | 密歇根大学董事会 | 通过预图案化台面进行的减轻应变的外延剥离 |
KR101743017B1 (ko) | 2015-05-19 | 2017-06-05 | 한국과학기술연구원 | 고속 에피택셜 리프트오프와 iii-v족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 |
CN105140318B (zh) * | 2015-06-30 | 2017-05-17 | 苏州强明光电有限公司 | 太阳能电池外延片及其制作方法 |
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US20180337082A1 (en) * | 2015-08-31 | 2018-11-22 | Stc.Unm | Mixed group-v sacrificial layers for release and transfer of membranes |
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CN105428427B (zh) * | 2015-12-11 | 2017-06-27 | 中国电子科技集团公司第十八研究所 | 薄膜砷化镓太阳电池衬底复用的衬底保护结构及加工工艺 |
WO2017196431A2 (en) | 2016-02-24 | 2017-11-16 | The Regents Of The University Of Michigan | Effective compound substrate for non-destructive epitaxial lift-off |
US9941168B1 (en) | 2016-09-21 | 2018-04-10 | Korea Institute Of Science And Technology | Method for manufacturing semiconductor device by epitaxial lift-off using plane dependency of III-V compound |
KR101824523B1 (ko) * | 2017-01-11 | 2018-02-01 | 엘지전자 주식회사 | 태양 전지 모듈 및 이를 구비하는 휴대용 충전기 |
CN107634121A (zh) * | 2017-08-15 | 2018-01-26 | 苏州苏纳光电有限公司 | 基于InP衬底剥离的红外光电探测器及其预制件的制备方法 |
US10553743B2 (en) | 2017-11-20 | 2020-02-04 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Flexible crystalline ultra-thin Si solar cells |
CN108040435B (zh) * | 2017-12-12 | 2020-06-19 | 北京科技大学 | 一种氮化铝陶瓷基板线路刻蚀方法 |
EP3743948A4 (en) * | 2018-01-25 | 2021-11-03 | Saint-Gobain ADFORS Canada, Ltd. | PHOTOVOLTAIC TEXTILE |
KR20200108485A (ko) * | 2018-02-02 | 2020-09-18 | 미합중국 (관리부서 : 미합중국 해군성) | 초박형 가요성 후방 접촉 실리콘 태양 전지들 및 이를 제조하기 위한 방법들 |
CN108520901A (zh) * | 2018-04-16 | 2018-09-11 | 江苏宜兴德融科技有限公司 | 薄膜太阳能电池及其制造方法 |
US12046471B1 (en) | 2018-06-06 | 2024-07-23 | United States Of America As Represented By The Secretary Of The Air Force | Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment |
KR102131619B1 (ko) * | 2018-06-12 | 2020-07-08 | 한국과학기술연구원 | 인화계 기판의 결정결함을 방지하기 위해 박막층을 형성하는 방법 |
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US11087974B2 (en) * | 2018-10-08 | 2021-08-10 | The Regents Of The University Of Michigan | Preparation of compound semiconductor substrate for epitaxial growth via non-destructive epitaxial lift-off |
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CN110224045B (zh) * | 2019-07-16 | 2021-06-15 | 中国科学院上海技术物理研究所 | 一种柔性InGaAs探测器的制备方法 |
RU196935U1 (ru) * | 2019-10-09 | 2020-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | КАЛИБРОВОЧНАЯ ДВУХПЕРИОДНАЯ СВЕРХРЕШЕТКА InAlAs/InGaAs НА ПОДЛОЖКЕ InP |
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CN111785794B (zh) * | 2020-07-20 | 2023-09-08 | 西安电子科技大学 | 基于ScAlN与InAlN极化插入层增强电场的N极性InGaN基太阳能电池 |
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CN112701176B (zh) * | 2021-03-23 | 2021-06-08 | 南昌凯迅光电有限公司 | 一种砷化镓薄膜太阳电池及制作方法 |
KR102625586B1 (ko) * | 2021-07-14 | 2024-01-16 | 한국광기술원 | 기판의 재활용이 가능한 ⅲ-ⅴ족 나노로드 태양전지 제조방법 |
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JP2008053250A (ja) * | 2006-08-22 | 2008-03-06 | Sony Corp | 半導体装置の製造方法 |
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TW200905922A (en) * | 2007-07-30 | 2009-02-01 | Juh-Yuh Su | Reusable substrate structure and method of handling the same |
-
2010
- 2010-09-09 IN IN3051DEN2012 patent/IN2012DN03051A/en unknown
- 2010-09-09 AU AU2010325106A patent/AU2010325106B2/en not_active Ceased
- 2010-09-09 EP EP10818111.6A patent/EP2462631B1/en active Active
- 2010-09-09 WO PCT/US2010/048213 patent/WO2011066029A2/en active Application Filing
- 2010-09-09 US US12/878,261 patent/US8378385B2/en active Active
- 2010-09-09 CN CN201080049905.8A patent/CN102804408B/zh not_active Expired - Fee Related
- 2010-09-09 KR KR1020127009157A patent/KR101714812B1/ko active IP Right Grant
- 2010-09-09 CA CA2789391A patent/CA2789391A1/en not_active Abandoned
- 2010-09-09 JP JP2012528887A patent/JP5619901B2/ja active Active
- 2010-09-10 TW TW099130822A patent/TWI550895B/zh active
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2013
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Also Published As
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EP2462631A2 (en) | 2012-06-13 |
WO2011066029A3 (en) | 2012-05-31 |
JP2013504878A (ja) | 2013-02-07 |
KR101714812B1 (ko) | 2017-03-22 |
TW201125152A (en) | 2011-07-16 |
CN102804408A (zh) | 2012-11-28 |
TWI550895B (zh) | 2016-09-21 |
US20130237001A1 (en) | 2013-09-12 |
AU2010325106A1 (en) | 2012-04-12 |
JP5619901B2 (ja) | 2014-11-05 |
EP2462631B1 (en) | 2021-06-30 |
AU2010325106B2 (en) | 2015-04-09 |
KR20120103762A (ko) | 2012-09-19 |
US20110186910A1 (en) | 2011-08-04 |
CN102804408B (zh) | 2016-01-20 |
US8927319B2 (en) | 2015-01-06 |
US8378385B2 (en) | 2013-02-19 |
CA2789391A1 (en) | 2011-06-03 |
WO2011066029A2 (en) | 2011-06-03 |
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