IN2012DN03051A - - Google Patents

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Publication number
IN2012DN03051A
IN2012DN03051A IN3051DEN2012A IN2012DN03051A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A IN 3051DEN2012 A IN3051DEN2012 A IN 3051DEN2012A IN 2012DN03051 A IN2012DN03051 A IN 2012DN03051A
Authority
IN
India
Prior art keywords
devices
growth substrate
methods
flexible
reuse
Prior art date
Application number
Other languages
English (en)
Inventor
R Forrest Stephen
Zimmerman Jeramy
Lee Kyusang
Shiu Kuen-Ting
Original Assignee
Univ Michigan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Michigan filed Critical Univ Michigan
Publication of IN2012DN03051A publication Critical patent/IN2012DN03051A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
IN3051DEN2012 2009-09-10 2010-09-09 IN2012DN03051A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US24137309P 2009-09-10 2009-09-10
US24137409P 2009-09-10 2009-09-10
US35829810P 2010-06-24 2010-06-24
PCT/US2010/048213 WO2011066029A2 (en) 2009-09-10 2010-09-09 Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

Publications (1)

Publication Number Publication Date
IN2012DN03051A true IN2012DN03051A (ko) 2015-07-31

Family

ID=44067165

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3051DEN2012 IN2012DN03051A (ko) 2009-09-10 2010-09-09

Country Status (10)

Country Link
US (2) US8378385B2 (ko)
EP (1) EP2462631B1 (ko)
JP (1) JP5619901B2 (ko)
KR (1) KR101714812B1 (ko)
CN (1) CN102804408B (ko)
AU (1) AU2010325106B2 (ko)
CA (1) CA2789391A1 (ko)
IN (1) IN2012DN03051A (ko)
TW (1) TWI550895B (ko)
WO (1) WO2011066029A2 (ko)

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AU2012280933A1 (en) * 2011-07-06 2014-01-23 The Regents Of The University Of Michigan Integrated solar collectors using epitaxial lift off and cold weld bonded semiconductor solar cells
CN102244134B (zh) * 2011-08-02 2013-05-15 厦门市三安光电科技有限公司 一种高效四结太阳能电池及其制作方法
US8541315B2 (en) * 2011-09-19 2013-09-24 International Business Machines Corporation High throughput epitaxial lift off for flexible electronics
US8916954B2 (en) * 2012-02-05 2014-12-23 Gtat Corporation Multi-layer metal support
US8841161B2 (en) * 2012-02-05 2014-09-23 GTAT.Corporation Method for forming flexible solar cells
KR20140128393A (ko) 2012-02-07 2014-11-05 더 리젠츠 오브 더 유니버시티 오브 미시간 에피택셜 리프트 오프 후 웨이퍼 재사용을 위한 열 표면 처리
KR20130104974A (ko) 2012-03-16 2013-09-25 삼성전자주식회사 반도체 발광소자 제조방법
US8785294B2 (en) 2012-07-26 2014-07-22 Gtat Corporation Silicon carbide lamina
US20140137930A1 (en) * 2012-11-16 2014-05-22 Solar Junction Corporation Multijunction solar cells
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US10658998B2 (en) 2013-07-31 2020-05-19 Oepic Semiconductors, Inc. Piezoelectric film transfer for acoustic resonators and filters
US10186629B2 (en) 2013-08-26 2019-01-22 The Regents Of The University Of Michigan Thin film lift-off via combination of epitaxial lift-off and spalling
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AU2014381597A1 (en) * 2013-11-11 2016-05-26 The Regents Of The University Of Michigan Thermally-assisted cold-weld bonding for epitaxial lift-off process
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US10535685B2 (en) 2013-12-02 2020-01-14 The Regents Of The University Of Michigan Fabrication of thin-film electronic devices with non-destructive wafer reuse
WO2015156874A2 (en) 2014-01-15 2015-10-15 The Regents Of The Univerity Of Michigan Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
US10680132B2 (en) * 2014-01-15 2020-06-09 The Regents Of The University Of Michigan Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer
US10141465B2 (en) * 2014-04-04 2018-11-27 The Regents Of The University Of Michigan Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators
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WO2015168272A1 (en) 2014-04-29 2015-11-05 The Regents Of The University Of Michigan Flexible antenna integrated with an array of solar cells
US9786643B2 (en) 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
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Also Published As

Publication number Publication date
EP2462631A2 (en) 2012-06-13
WO2011066029A3 (en) 2012-05-31
JP2013504878A (ja) 2013-02-07
KR101714812B1 (ko) 2017-03-22
TW201125152A (en) 2011-07-16
CN102804408A (zh) 2012-11-28
TWI550895B (zh) 2016-09-21
US20130237001A1 (en) 2013-09-12
AU2010325106A1 (en) 2012-04-12
JP5619901B2 (ja) 2014-11-05
EP2462631B1 (en) 2021-06-30
AU2010325106B2 (en) 2015-04-09
KR20120103762A (ko) 2012-09-19
US20110186910A1 (en) 2011-08-04
CN102804408B (zh) 2016-01-20
US8927319B2 (en) 2015-01-06
US8378385B2 (en) 2013-02-19
CA2789391A1 (en) 2011-06-03
WO2011066029A2 (en) 2011-06-03

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