IN2012DN02992A - - Google Patents
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- Publication number
- IN2012DN02992A IN2012DN02992A IN2992DEN2012A IN2012DN02992A IN 2012DN02992 A IN2012DN02992 A IN 2012DN02992A IN 2992DEN2012 A IN2992DEN2012 A IN 2992DEN2012A IN 2012DN02992 A IN2012DN02992 A IN 2012DN02992A
- Authority
- IN
- India
- Prior art keywords
- cadmium
- layer
- zinc sulfide
- telluride layer
- cadmium telluride
- Prior art date
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 3
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 2
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25110809P | 2009-10-13 | 2009-10-13 | |
| PCT/US2010/052318 WO2011046930A1 (en) | 2009-10-13 | 2010-10-12 | Method of annealing cadmium telluride photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN02992A true IN2012DN02992A (OSRAM) | 2015-07-31 |
Family
ID=43876476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN2992DEN2012 IN2012DN02992A (OSRAM) | 2009-10-13 | 2010-10-12 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110088768A1 (OSRAM) |
| CN (1) | CN102696118A (OSRAM) |
| IN (1) | IN2012DN02992A (OSRAM) |
| TW (1) | TW201121089A (OSRAM) |
| WO (1) | WO2011046930A1 (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013074306A1 (en) | 2011-11-18 | 2013-05-23 | First Solar, Inc. | Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules |
| WO2014151532A1 (en) | 2013-03-15 | 2014-09-25 | First Solar, Inc. | Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and resulting device structure |
| EP2973730A1 (en) | 2013-03-15 | 2016-01-20 | First Solar, Inc | High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture |
| TWI550717B (zh) | 2014-08-25 | 2016-09-21 | 新能光電科技股份有限公司 | 熱處理方法及其所製得之產物 |
| US10453988B2 (en) | 2016-06-03 | 2019-10-22 | University Of Utah Research Foundation | Methods for creating cadmium telluride (CdTe) and related alloy film |
| CN119181734A (zh) * | 2018-10-24 | 2024-12-24 | 第一阳光公司 | 具有v族掺杂的光伏器件用缓冲层 |
| CN112837997B (zh) * | 2021-01-06 | 2022-12-13 | 河南大学 | 一种ZnCdS薄膜的制备方法及铜锌锡硫硒太阳电池的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900000534B1 (ko) * | 1987-09-25 | 1990-01-31 | 한국과학기술원 | Cd₁_xZnxS 소결막의 제조방법 |
| US4950615A (en) * | 1989-02-06 | 1990-08-21 | International Solar Electric Technology, Inc. | Method and making group IIB metal - telluride films and solar cells |
| DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| US5916375A (en) * | 1995-12-07 | 1999-06-29 | Japan Energy Corporation | Method of producing photoelectric conversion device |
| US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
| JP4662616B2 (ja) * | 2000-10-18 | 2011-03-30 | パナソニック株式会社 | 太陽電池 |
| WO2002091483A2 (en) * | 2001-05-08 | 2002-11-14 | Bp Corporation North America Inc. | Improved photovoltaic device |
| US20090223551A1 (en) * | 2008-03-04 | 2009-09-10 | Solexant Corp. | Process for making solar cells |
| CA2716687A1 (en) * | 2008-03-18 | 2009-09-24 | Charlie Hotz | Improved back contact in thin film solar cells |
| US7842534B2 (en) * | 2008-04-02 | 2010-11-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
| US8084682B2 (en) * | 2009-01-21 | 2011-12-27 | Yung-Tin Chen | Multiple band gapped cadmium telluride photovoltaic devices and process for making the same |
-
2010
- 2010-10-12 CN CN201080046259XA patent/CN102696118A/zh active Pending
- 2010-10-12 IN IN2992DEN2012 patent/IN2012DN02992A/en unknown
- 2010-10-12 WO PCT/US2010/052318 patent/WO2011046930A1/en not_active Ceased
- 2010-10-12 TW TW099134721A patent/TW201121089A/zh unknown
- 2010-10-13 US US12/903,800 patent/US20110088768A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW201121089A (en) | 2011-06-16 |
| US20110088768A1 (en) | 2011-04-21 |
| CN102696118A (zh) | 2012-09-26 |
| WO2011046930A1 (en) | 2011-04-21 |
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