IN2012DN01226A - - Google Patents

Info

Publication number
IN2012DN01226A
IN2012DN01226A IN1226DEN2012A IN2012DN01226A IN 2012DN01226 A IN2012DN01226 A IN 2012DN01226A IN 1226DEN2012 A IN1226DEN2012 A IN 1226DEN2012A IN 2012DN01226 A IN2012DN01226 A IN 2012DN01226A
Authority
IN
India
Prior art keywords
solar cell
oxide
substrate
dents
ridges
Prior art date
Application number
Other languages
English (en)
Inventor
Matsui Yuji
Kato Toshimichi
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of IN2012DN01226A publication Critical patent/IN2012DN01226A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
IN1226DEN2012 2009-07-29 2010-07-28 IN2012DN01226A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009176401 2009-07-29
PCT/JP2010/062730 WO2011013719A1 (ja) 2009-07-29 2010-07-28 太陽電池用透明導電性基板および太陽電池

Publications (1)

Publication Number Publication Date
IN2012DN01226A true IN2012DN01226A (enExample) 2015-04-10

Family

ID=43529371

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1226DEN2012 IN2012DN01226A (enExample) 2009-07-29 2010-07-28

Country Status (8)

Country Link
US (1) US20120118362A1 (enExample)
EP (1) EP2461372A1 (enExample)
JP (1) JPWO2011013719A1 (enExample)
KR (1) KR20120036976A (enExample)
CN (1) CN102473742A (enExample)
IN (1) IN2012DN01226A (enExample)
TW (1) TW201117390A (enExample)
WO (1) WO2011013719A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8932898B2 (en) * 2011-01-14 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Deposition and post-processing techniques for transparent conductive films
KR101225739B1 (ko) * 2011-04-22 2013-01-23 삼성코닝정밀소재 주식회사 광전지용 산화아연계 투명 도전막 및 그 제조방법
KR101421026B1 (ko) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출층 기판 및 그 제조방법
JP5835200B2 (ja) * 2012-12-04 2015-12-24 住友金属鉱山株式会社 表面電極付透明導電ガラス基板及びその製造方法、並びに薄膜太陽電池及びその製造方法
WO2015076210A1 (ja) * 2013-11-19 2015-05-28 旭硝子株式会社 薄膜形成方法およびコーティングガラス
US10672921B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
CN109524488B (zh) * 2018-11-26 2020-08-18 西安交通大学 具有纳米尺度凸起的仿金字塔绒面增阻层的制备方法
CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269408A (ja) * 1985-09-20 1987-03-30 三洋電機株式会社 透明導電膜の粗面化方法
JPH01106472A (ja) * 1987-10-20 1989-04-24 Sanyo Electric Co Ltd 太陽電池
JPH06120534A (ja) * 1992-10-07 1994-04-28 Sanyo Electric Co Ltd 非晶質太陽電池
JP3253449B2 (ja) * 1994-05-30 2002-02-04 三洋電機株式会社 光起電力装置の製造方法
JP3297380B2 (ja) * 1998-08-07 2002-07-02 三菱重工業株式会社 太陽電池及び太陽電池の製造方法
JP4460108B2 (ja) 1999-05-18 2010-05-12 日本板硝子株式会社 光電変換装置用基板の製造方法
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP4389585B2 (ja) * 2001-10-19 2009-12-24 旭硝子株式会社 透明導電性酸化物膜付き基体および光電変換素子
JP5068946B2 (ja) 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
WO2005027229A1 (ja) 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法
WO2006057160A1 (ja) * 2004-11-29 2006-06-01 Kaneka Corporation 薄膜光電変換装置
EP1950813A4 (en) 2005-11-17 2010-07-21 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR CELL AND MANUFACTURING METHOD THEREFOR
CN101459201A (zh) * 2007-12-10 2009-06-17 台达电子工业股份有限公司 太阳能电池及其制作方法
US7881023B2 (en) 2008-01-24 2011-02-01 Tdk Corporation Magnetoresistive device of the CPP type, and magnetic disk system

Also Published As

Publication number Publication date
WO2011013719A1 (ja) 2011-02-03
JPWO2011013719A1 (ja) 2013-01-10
CN102473742A (zh) 2012-05-23
EP2461372A1 (en) 2012-06-06
US20120118362A1 (en) 2012-05-17
TW201117390A (en) 2011-05-16
KR20120036976A (ko) 2012-04-18

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