IN2012DN00415A - - Google Patents

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Publication number
IN2012DN00415A
IN2012DN00415A IN415DEN2012A IN2012DN00415A IN 2012DN00415 A IN2012DN00415 A IN 2012DN00415A IN 415DEN2012 A IN415DEN2012 A IN 415DEN2012A IN 2012DN00415 A IN2012DN00415 A IN 2012DN00415A
Authority
IN
India
Prior art keywords
electrode
cooling surface
coolant composition
carrier body
coolant
Prior art date
Application number
Inventor
Max Dehtiar
Jason Giardina
Jaime Vanderhovel
Michael Hofmeister
Michael John Molnar
Robert E Stratton
Stephen Pawelkowski
Original Assignee
Hemlock Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemlock Semiconductor Corp filed Critical Hemlock Semiconductor Corp
Publication of IN2012DN00415A publication Critical patent/IN2012DN00415A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B43/00—Arrangements for separating or purifying gases or liquids; Arrangements for vaporising the residuum of liquid refrigerant, e.g. by heat
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B47/00—Arrangements for preventing or removing deposits or corrosion, not provided for in another subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

A method inhibits formation of deposits on a cooling surface of an electrode. The electrode is used in a manufacturing system that deposits a material on a carrier body. The cooling surface comprises copper. The system includes a reactor defining a chamber. The electrode is at least partially disposed within the chamber and supports the carrier body. A circulation system in fluid communication with the electrode transports a coolant composition to and from the cooling surface. The coolant composition comprises a coolant and dissolved copper from the cooling surface. A filtration system is in fluid communication with the circulation system. The method heats the electrode. The cooling surface of the electrode is contacted with the coolant composition. The material is deposited on the carrier body and the coolant composition is filtered with the filtration system to remove at least a portion of the dissolved copper therefrom.
IN415DEN2012 2009-07-14 2010-07-14 IN2012DN00415A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22534709P 2009-07-14 2009-07-14
PCT/US2010/041961 WO2011008849A1 (en) 2009-07-14 2010-07-14 A method of inhibiting formation of deposits in a manufacturing system

Publications (1)

Publication Number Publication Date
IN2012DN00415A true IN2012DN00415A (en) 2015-05-22

Family

ID=42697284

Family Applications (1)

Application Number Title Priority Date Filing Date
IN415DEN2012 IN2012DN00415A (en) 2009-07-14 2010-07-14

Country Status (10)

Country Link
US (1) US20120114860A1 (en)
EP (1) EP2454394A1 (en)
JP (1) JP2012533684A (en)
KR (1) KR20120042840A (en)
CN (1) CN102471883A (en)
AU (1) AU2010273462A1 (en)
CA (1) CA2768171A1 (en)
IN (1) IN2012DN00415A (en)
RU (1) RU2012101082A (en)
WO (1) WO2011008849A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013187384A1 (en) * 2012-06-11 2013-12-19 ユニチカ株式会社 Fibrous copper microparticles and method for manufacturing same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB823383A (en) * 1955-01-13 1959-11-11 Siemens Ag Improvements in or relating to processes and apparatus for the production of very pure crystalline substances
DE2652218A1 (en) * 1976-11-16 1978-05-24 Wacker Chemitronic PROCESS FOR PRODUCING SUBSTRATE-BOND LARGE-AREA SILICON
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
DE2912661C2 (en) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Process for the deposition of pure semiconductor material and nozzle for carrying out the process
DE3027362A1 (en) * 1980-07-18 1982-02-18 Siemens AG, 1000 Berlin und 8000 München COOLING ARRANGEMENT AND METHOD FOR OPERATING THE ARRANGEMENT
DE3134803A1 (en) * 1981-09-02 1983-03-17 Brown, Boveri & Cie Ag, 6800 Mannheim "METHOD FOR CLEANING SEMICONDUCTOR-COOLED ELECTRICAL MACHINES AND APPARATUS"
JPS5942007A (en) * 1982-08-31 1984-03-08 Toray Eng Co Ltd Shutdown method of reverse osmosis device
US4477911A (en) * 1982-12-02 1984-10-16 Westinghouse Electric Corp. Integral heat pipe-electrode
JPH0619584A (en) * 1992-07-02 1994-01-28 Hitachi Ltd Cooling device for electronic computer
DE19882883B4 (en) * 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake Chemical vapor deposition system for producing polycrystalline silicon rods
CN1290421A (en) * 1998-02-23 2001-04-04 法国电气公司 Method for purifying cooling circuit of alternator stator operating in ventilated circuit, and implementing device
JP3903746B2 (en) * 2001-06-25 2007-04-11 栗田工業株式会社 Circulating cooling water treatment method
US6623801B2 (en) * 2001-07-30 2003-09-23 Komatsu Ltd. Method of producing high-purity polycrystalline silicon
JP4467046B2 (en) * 2004-03-31 2010-05-26 伯東株式会社 Metal corrosion inhibitor
JP4533925B2 (en) * 2007-12-17 2010-09-01 財団法人高知県産業振興センター Film forming apparatus and film forming method
EP2265883A1 (en) * 2008-04-14 2010-12-29 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
JP2010038381A (en) * 2008-07-31 2010-02-18 Daikin Ind Ltd Refrigeration system

Also Published As

Publication number Publication date
US20120114860A1 (en) 2012-05-10
JP2012533684A (en) 2012-12-27
RU2012101082A (en) 2013-08-20
CN102471883A (en) 2012-05-23
WO2011008849A1 (en) 2011-01-20
EP2454394A1 (en) 2012-05-23
AU2010273462A1 (en) 2012-02-02
CA2768171A1 (en) 2011-01-20
KR20120042840A (en) 2012-05-03

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