GB823383A - Improvements in or relating to processes and apparatus for the production of very pure crystalline substances - Google Patents

Improvements in or relating to processes and apparatus for the production of very pure crystalline substances

Info

Publication number
GB823383A
GB823383A GB1282/56A GB128256A GB823383A GB 823383 A GB823383 A GB 823383A GB 1282/56 A GB1282/56 A GB 1282/56A GB 128256 A GB128256 A GB 128256A GB 823383 A GB823383 A GB 823383A
Authority
GB
United Kingdom
Prior art keywords
electrodes
anode
enclosure
cathode
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1282/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB823383A publication Critical patent/GB823383A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

In the production of very pure crystalline silicon according to the method of the parent Specification, provision is made for liquid cooling of the enclosure and one or more of the electrodes so that the release of vapours from at least the surfaces other than that of the deposition electrode or electrodes is prevented. In Fig. 1 the cathode 2 is the deposition electrode and may consist of a rod of silicon. Cooling water is circulated through the enclosure 1 and the anode 4. The gaseous starting products, e.g. silicon tetrachloride or silico-chloroform, are introduced through a ring of nozzles 5. The reducing agent, e.g. hydrogen, is introduced through the tube 7 surrounding the anode. The anode 4 may be shaken, periodically or continuously, to remove deposits which do form, e.g. by means of an armature and relay 9. In a modification the cathode is surrounded by a ring anode, or one or more rotating anodes may be used, or the cathode may rotate. In <PICT:0823383/III/1> <PICT:0823383/III/2> Fig. 3 the enclosure consists of two water-cooled hollow tubes 16 and 17 with oblique electrodes 18 and 19 of the substance to be produced. An A.C. discharge is used. The enclosure and the electrodes are so dimensioned to cool the electrodes. 21 is an observation window and 20 is a nozzle for introducing the gas. The cooled surfaces may consist of copper, silver or steel. Copper-coated or silver-coated metals may be used.
GB1282/56A 1955-01-13 1956-01-13 Improvements in or relating to processes and apparatus for the production of very pure crystalline substances Expired GB823383A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE823383X 1955-01-13

Publications (1)

Publication Number Publication Date
GB823383A true GB823383A (en) 1959-11-11

Family

ID=6746134

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1282/56A Expired GB823383A (en) 1955-01-13 1956-01-13 Improvements in or relating to processes and apparatus for the production of very pure crystalline substances

Country Status (1)

Country Link
GB (1) GB823383A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011008849A1 (en) * 2009-07-14 2011-01-20 Hemlock Semiconductor Corporation A method of inhibiting formation of deposits in a manufacturing system
US8147656B2 (en) 2005-05-25 2012-04-03 Spawnt Private S.A.R.L. Method for the production of silicon from silyl halides
US8177943B2 (en) 2006-09-14 2012-05-15 Spawnt Private S.A.R.L. Solid polysilane mixtures

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8147656B2 (en) 2005-05-25 2012-04-03 Spawnt Private S.A.R.L. Method for the production of silicon from silyl halides
US9382122B2 (en) 2005-05-25 2016-07-05 Spawnt Private S.À.R.L. Method for the production of silicon from silyl halides
US8177943B2 (en) 2006-09-14 2012-05-15 Spawnt Private S.A.R.L. Solid polysilane mixtures
WO2011008849A1 (en) * 2009-07-14 2011-01-20 Hemlock Semiconductor Corporation A method of inhibiting formation of deposits in a manufacturing system

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