IN192274B - - Google Patents

Info

Publication number
IN192274B
IN192274B IN1950CA1996A IN192274B IN 192274 B IN192274 B IN 192274B IN 1950CA1996 A IN1950CA1996 A IN 1950CA1996A IN 192274 B IN192274 B IN 192274B
Authority
IN
India
Prior art keywords
high voltage
programming
erasing
value
memory
Prior art date
Application number
Other languages
English (en)
Inventor
Holger Sedlak
Hans-Heinrich Viehmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN192274B publication Critical patent/IN192274B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
IN1950CA1996 1995-11-10 1996-11-11 IN192274B (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19542029A DE19542029C1 (de) 1995-11-10 1995-11-10 Verfahren zum selbsttätigen Ermitteln der nötigen Hochspannung zum Programmieren/Löschen eines EEPROMs

Publications (1)

Publication Number Publication Date
IN192274B true IN192274B (no) 2004-03-27

Family

ID=7777185

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1950CA1996 IN192274B (no) 1995-11-10 1996-11-11

Country Status (11)

Country Link
EP (1) EP0860011B1 (no)
JP (1) JPH11515129A (no)
KR (1) KR100408323B1 (no)
CN (1) CN1113366C (no)
AT (1) ATE181173T1 (no)
DE (2) DE19542029C1 (no)
ES (1) ES2135269T3 (no)
IN (1) IN192274B (no)
RU (1) RU2189083C2 (no)
UA (1) UA47444C2 (no)
WO (1) WO1997017704A2 (no)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583052B2 (ja) * 2000-03-31 2004-10-27 九州日本電気株式会社 半導体記憶装置
US7239557B2 (en) * 2005-06-17 2007-07-03 Micron Technology, Inc. Program method with optimized voltage level for flash memory
KR100725979B1 (ko) * 2005-07-23 2007-06-08 삼성전자주식회사 비휘발성 메모리의 기입/독출 내구력 개선 장치 및 그 방법
KR100843004B1 (ko) * 2006-04-14 2008-07-01 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그 구동 방법
KR100843037B1 (ko) * 2007-03-27 2008-07-01 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 소거 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG47058A1 (en) * 1993-09-10 1998-03-20 Intel Corp Circuitry and method for selecting a drain programming voltage for a nonvolatile memory
JP3737525B2 (ja) * 1994-03-11 2006-01-18 株式会社東芝 半導体記憶装置
JPH08115597A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 半導体ディスク装置

Also Published As

Publication number Publication date
JPH11515129A (ja) 1999-12-21
WO1997017704A3 (de) 1997-06-26
ATE181173T1 (de) 1999-06-15
CN1113366C (zh) 2003-07-02
KR100408323B1 (ko) 2004-03-22
WO1997017704A2 (de) 1997-05-15
RU2189083C2 (ru) 2002-09-10
ES2135269T3 (es) 1999-10-16
EP0860011B1 (de) 1999-06-09
DE19542029C1 (de) 1997-04-10
UA47444C2 (uk) 2002-07-15
DE59602197D1 (de) 1999-07-15
CN1202263A (zh) 1998-12-16
EP0860011A2 (de) 1998-08-26
KR19990067410A (ko) 1999-08-16

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