IN170221B - - Google Patents

Info

Publication number
IN170221B
IN170221B IN849/DEL/86A IN849DE1986A IN170221B IN 170221 B IN170221 B IN 170221B IN 849DE1986 A IN849DE1986 A IN 849DE1986A IN 170221 B IN170221 B IN 170221B
Authority
IN
India
Prior art keywords
film
support material
surrogate substrate
affixing
separating
Prior art date
Application number
IN849/DEL/86A
Other languages
English (en)
Inventor
Joseph John Hanak
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN170221B publication Critical patent/IN170221B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IN849/DEL/86A 1985-10-11 1986-09-25 IN170221B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/786,782 US4663828A (en) 1985-10-11 1985-10-11 Process and apparatus for continuous production of lightweight arrays of photovoltaic cells

Publications (1)

Publication Number Publication Date
IN170221B true IN170221B (fr) 1992-02-29

Family

ID=25139576

Family Applications (1)

Application Number Title Priority Date Filing Date
IN849/DEL/86A IN170221B (fr) 1985-10-11 1986-09-25

Country Status (9)

Country Link
US (1) US4663828A (fr)
EP (1) EP0218193B1 (fr)
JP (1) JPH0746732B2 (fr)
AT (1) ATE76221T1 (fr)
CA (1) CA1290719C (fr)
DE (1) DE3685287D1 (fr)
ES (1) ES2031812T3 (fr)
GR (1) GR3004642T3 (fr)
IN (1) IN170221B (fr)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2667616B1 (fr) * 1990-10-05 1993-01-15 Aerospatiale Procede et installation de metallisation en continu d'une meche de fibres etalee.
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
US6001432A (en) * 1992-11-19 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Apparatus for forming films on a substrate
US6001431A (en) * 1992-12-28 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a magnetic recording medium
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US5674325A (en) * 1995-06-07 1997-10-07 Photon Energy, Inc. Thin film photovoltaic device and process of manufacture
US6093290A (en) * 1997-05-14 2000-07-25 Canon Kabushiki Kaisha Method of generating a reciprocating plurality of magnetic fluxes on a target
NL1013900C2 (nl) * 1999-12-21 2001-06-25 Akzo Nobel Nv Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen.
US6441298B1 (en) 2000-08-15 2002-08-27 Nec Research Institute, Inc Surface-plasmon enhanced photovoltaic device
US20020117199A1 (en) * 2001-02-06 2002-08-29 Oswald Robert S. Process for producing photovoltaic devices
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
US6649901B2 (en) 2002-03-14 2003-11-18 Nec Laboratories America, Inc. Enhanced optical transmission apparatus with improved aperture geometry
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
CN102097458B (zh) 2004-06-04 2013-10-30 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
WO2006053218A2 (fr) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Systeme de commande de pression dans un appareil de depot de substrat photovoltaique
JP2008520103A (ja) * 2004-11-10 2008-06-12 デイスター テクノロジーズ，インコーポレイティド 連続プロセスを用いて薄膜太陽電池を形成するための方法及び装置
FR2879821B1 (fr) * 2004-12-21 2007-06-08 Solaforce Soc Par Actions Simp Procede de fabrication de cellules photovoltaiques
US20070221268A1 (en) * 2006-03-21 2007-09-27 Hasch Bruce M Encapsulants for electronic components
WO2008036837A2 (fr) * 2006-09-20 2008-03-27 The Board Of Trustees Of The University Of Illinois Strategies de liberation mises en œuvre dans la fabrication de structures semiconductrices transferables, de dispositifs et de composants de dispositifs
CA2568136C (fr) * 2006-11-30 2008-07-29 Tenxc Wireless Inc. Implementation de matrice de butler
AT504680B1 (de) * 2006-12-20 2009-06-15 3S Swiss Solar Systems Ag Verfahren und vorrichtung zum herstellen laminierter solarmodule
US20080216887A1 (en) * 2006-12-22 2008-09-11 Advent Solar, Inc. Interconnect Technologies for Back Contact Solar Cells and Modules
EP2104954B1 (fr) 2007-01-17 2022-03-16 The Board of Trustees of the University of Illinois Systèmes optiques fabriqués par un ensemble à base d'impression
US20090126786A1 (en) * 2007-11-13 2009-05-21 Advent Solar, Inc. Selective Emitter and Texture Processes for Back Contact Solar Cells
CN102113130A (zh) * 2008-04-29 2011-06-29 应用材料股份有限公司 使用单石模块组合技术制造的光伏打模块
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
EP2349440B1 (fr) 2008-10-07 2019-08-21 Mc10, Inc. Ballonnet de cathéter comportant un circuit intégré étirable et un réseau de détecteurs
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
CN102301456A (zh) * 2008-12-17 2011-12-28 奥塔装置公司 基于带的外延剥离设备和方法
WO2010132552A1 (fr) * 2009-05-12 2010-11-18 The Board Of Trustees Of The University Of Illinois Ensembles imprimés de diodes électroluminescentes inorganiques microscopiques ultraminces pour dispositifs d'affichage déformables et semi-transparents
US20110030773A1 (en) * 2009-08-06 2011-02-10 Alliance For Sustainable Energy, Llc Photovoltaic cell with back-surface reflectivity scattering
US8466447B2 (en) 2009-08-06 2013-06-18 Alliance For Sustainable Energy, Llc Back contact to film silicon on metal for photovoltaic cells
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10918298B2 (en) 2009-12-16 2021-02-16 The Board Of Trustees Of The University Of Illinois High-speed, high-resolution electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US8759664B2 (en) 2009-12-28 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Thin film solar cell strings
CN102892356B (zh) 2010-03-17 2016-01-13 伊利诺伊大学评议会 基于生物可吸收基质的可植入生物医学装置
EP2395567B1 (fr) 2010-06-10 2018-10-03 Solarwave AB Procédé pour produire un module de cellule solaire
KR101648563B1 (ko) * 2010-06-29 2016-08-16 한화테크윈 주식회사 그래핀 전사필름 제조방법 및 그래핀 전사필름 제조장치
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
WO2012158709A1 (fr) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Barrettes de del à gestion thermique assemblées par impression
JP2014523633A (ja) 2011-05-27 2014-09-11 エムシー１０ インコーポレイテッド 電子的、光学的、且つ／又は機械的装置及びシステム並びにこれらの装置及びシステムを製造する方法
WO2012167096A2 (fr) 2011-06-03 2012-12-06 The Board Of Trustees Of The University Of Illinois Réseau d'électrodes de surface conformables, multiplexées de manière active et à haute densité, pour un interfaçage avec le cerveau
EP2786644B1 (fr) 2011-12-01 2019-04-10 The Board of Trustees of the University of Illionis Dispositifs transitoires conçus pour subir des transformations programmables
JP2015521303A (ja) 2012-03-30 2015-07-27 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシ 表面への形状適合可能な付属物装着可能電子デバイス
CN104412357B (zh) 2012-04-17 2017-09-22 环球太阳能公司 积体薄膜太阳能晶胞电池的互连
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
CN105164816B (zh) 2013-01-28 2017-03-08 环球太阳能公司 光伏互连系统、装置和方法
JP2018524677A (ja) 2015-06-01 2018-08-30 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 無線電力及び近距離無線通信機能を備えた小型電子システム
KR20180034342A (ko) 2015-06-01 2018-04-04 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 대안적인 자외선 감지방법
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
EP3551778A1 (fr) * 2016-11-08 2019-10-16 Nanovate OY Système et procédé de production de graphène continu et monolithique

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE622403A (fr) *
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
ES465638A1 (es) * 1977-12-30 1978-10-01 Complisa Sa Procedimiento para la metalizacion especular de cualquier soporte en bandas y hojas.
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
DE3000889C2 (de) * 1980-01-11 1984-07-26 Siemens AG, 1000 Berlin und 8000 München Verwendung einer um zwei Rollen umlaufenden Metallfolie zum Stranggießen von amorphem Silizium
EP0191505A3 (fr) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Méthode de fabrication de feuilles en matériau cristallin
US4323419A (en) * 1980-05-08 1982-04-06 Atlantic Richfield Company Method for ribbon solar cell fabrication
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4379020A (en) * 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
US4370288A (en) * 1980-11-18 1983-01-25 Motorola, Inc. Process for forming self-supporting semiconductor film
US4419178A (en) * 1981-06-19 1983-12-06 Rode Daniel L Continuous ribbon epitaxy
JPS5848473A (ja) * 1981-09-17 1983-03-22 Konishiroku Photo Ind Co Ltd アモルフアスシリコン太陽電池の製造方法
US4492181A (en) * 1982-03-19 1985-01-08 Sovonics Solar Systems Apparatus for continuously producing tandem amorphous photovoltaic cells

Also Published As

Publication number Publication date
JPS6288372A (ja) 1987-04-22
ATE76221T1 (de) 1992-05-15
EP0218193A3 (en) 1989-05-10
EP0218193B1 (fr) 1992-05-13
CA1290719C (fr) 1991-10-15
US4663828A (en) 1987-05-12
DE3685287D1 (de) 1992-06-17
GR3004642T3 (fr) 1993-04-28
JPH0746732B2 (ja) 1995-05-17
EP0218193A2 (fr) 1987-04-15
ES2031812T3 (es) 1993-01-01

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