IN163675B - - Google Patents

Info

Publication number
IN163675B
IN163675B IN801/DEL/83A IN801DE1983A IN163675B IN 163675 B IN163675 B IN 163675B IN 801DE1983 A IN801DE1983 A IN 801DE1983A IN 163675 B IN163675 B IN 163675B
Authority
IN
India
Application number
IN801/DEL/83A
Other languages
English (en)
Inventor
Prem Nath
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23779157&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN163675(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN163675B publication Critical patent/IN163675B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/138Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Non-Insulated Conductors (AREA)
IN801/DEL/83A 1982-12-09 1983-11-30 IN163675B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/448,139 US4605565A (en) 1982-12-09 1982-12-09 Method of depositing a highly conductive, highly transmissive film

Publications (1)

Publication Number Publication Date
IN163675B true IN163675B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) 1988-10-29

Family

ID=23779157

Family Applications (1)

Application Number Title Priority Date Filing Date
IN801/DEL/83A IN163675B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) 1982-12-09 1983-11-30

Country Status (12)

Country Link
US (1) US4605565A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
EP (1) EP0112132B1 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
JP (1) JPH0622202B2 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
KR (1) KR910007380B1 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
AU (1) AU564776B2 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
BR (1) BR8306745A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
CA (1) CA1219968A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
DE (1) DE3379489D1 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
ES (2) ES527828A0 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
IN (1) IN163675B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
MX (1) MX155196A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
ZA (1) ZA838885B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
EP0263880B1 (en) * 1986-03-12 1992-09-30 Tobi Co., Ltd. Continuous ion plating device for rapidly moving film
JPH0734332B2 (ja) * 1986-03-12 1995-04-12 株式会社ト−ビ 透明導電性フイルムの製造方法
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
JP2686266B2 (ja) * 1988-01-28 1997-12-08 株式会社日立製作所 受光素子の製造方法
US5008215A (en) * 1989-07-07 1991-04-16 Industrial Technology Research Institute Process for preparing high sensitivity semiconductive magnetoresistance element
US5462771A (en) * 1992-11-09 1995-10-31 Akira Motoki Method of manufacturing electromagnetic wave shielding plastic molding
US5698262A (en) * 1996-05-06 1997-12-16 Libbey-Owens-Ford Co. Method for forming tin oxide coating on glass
US6153271A (en) * 1999-12-30 2000-11-28 General Vacuum, Inc. Electron beam evaporation of transparent indium tin oxide
KR20010078862A (ko) * 2001-05-02 2001-08-22 조육형 산화물 증착 플라스틱 필름의 연속 열처리 방법 및 시스템
EP1289025A1 (fr) * 2001-08-30 2003-03-05 Universite De Neuchatel Procédé de dépot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat
WO2004020686A2 (en) * 2002-08-28 2004-03-11 Moxtronics, Inc. A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
CN1751140B (zh) * 2003-02-14 2011-02-02 克拉里宗有限公司 产生臭氧的装置和方法
US20070054158A1 (en) * 2005-09-07 2007-03-08 Ovshinsky Stanford R Combination of photovoltaic devices and batteries which utilize a solid polymeric electrolyte
US9276142B2 (en) 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
US8476105B2 (en) 2010-12-22 2013-07-02 General Electric Company Method of making a transparent conductive oxide layer and a photovoltaic device
JP2014107421A (ja) * 2012-11-28 2014-06-09 Shimadzu Corp 成膜装置、放射線検出器および放射線検出器の製造方法
US10270010B2 (en) 2014-01-28 2019-04-23 Kaneka Corporation Substrate with transparent electrode and method for producing same
RU2609764C1 (ru) * 2015-10-26 2017-02-02 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ получения аморфных пленок халькогенидных стеклообразных полупроводников с эффектом фазовой памяти

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4342631A (en) * 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus
US4336277A (en) * 1980-09-29 1982-06-22 The Regents Of The University Of California Transparent electrical conducting films by activated reactive evaporation
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US4417092A (en) * 1981-03-16 1983-11-22 Exxon Research And Engineering Co. Sputtered pin amorphous silicon semi-conductor device and method therefor
JPS5880877A (ja) * 1981-11-10 1983-05-16 Konishiroku Photo Ind Co Ltd 太陽電池及びその製造方法

Also Published As

Publication number Publication date
ZA838885B (en) 1984-07-25
EP0112132A3 (en) 1985-07-03
ES8505838A1 (es) 1985-06-16
EP0112132A2 (en) 1984-06-27
KR910007380B1 (ko) 1991-09-25
ES527828A0 (es) 1985-06-16
ES8700977A1 (es) 1986-11-16
ES540320A0 (es) 1986-11-16
MX155196A (es) 1988-02-01
JPH0622202B2 (ja) 1994-03-23
US4605565A (en) 1986-08-12
DE3379489D1 (en) 1989-04-27
KR850003480A (ko) 1985-06-17
JPS59117178A (ja) 1984-07-06
BR8306745A (pt) 1984-07-17
AU2223183A (en) 1984-06-14
AU564776B2 (en) 1987-08-27
EP0112132B1 (en) 1989-03-22
CA1219968A (en) 1987-03-31

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