IN162169B - - Google Patents

Info

Publication number
IN162169B
IN162169B IN287/CAL/85A IN287CA1985A IN162169B IN 162169 B IN162169 B IN 162169B IN 287CA1985 A IN287CA1985 A IN 287CA1985A IN 162169 B IN162169 B IN 162169B
Authority
IN
India
Application number
IN287/CAL/85A
Other languages
English (en)
Inventor
Lore Bernewitz
Richard Falckenberg
Gerhardt Hoyler
Josef Grabmaier
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN162169B publication Critical patent/IN162169B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007Pulling on a substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06Non-vertical pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/545Microcrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
IN287/CAL/85A 1984-04-09 1985-04-15 IN162169B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3413355 1984-04-09

Publications (1)

Publication Number Publication Date
IN162169B true IN162169B (es) 1988-04-09

Family

ID=6233092

Family Applications (1)

Application Number Title Priority Date Filing Date
IN287/CAL/85A IN162169B (es) 1984-04-09 1985-04-15

Country Status (5)

Country Link
US (1) US4657627A (es)
EP (1) EP0158181B1 (es)
JP (1) JPS60233818A (es)
DE (1) DE3560643D1 (es)
IN (1) IN162169B (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
US5049852A (en) * 1990-01-16 1991-09-17 Mosebach Manufacturing Company Resistor grid heat dissipating assembly
DE102005045015A1 (de) 2005-09-21 2007-03-29 Robert Bosch Gmbh Filterelement und Rußfilter mit verbesserter Thermoschockbeständigkeit
WO2010028103A2 (en) * 2008-09-03 2010-03-11 Evergreen Solar, Inc. String with refractory metal core for string ribbon crystal growth
US9050784B2 (en) 2010-12-22 2015-06-09 E I Du Pont De Nemours And Company Fire resistant back-sheet for photovoltaic module

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169739A (en) * 1978-04-12 1979-10-02 Semix, Incorporated Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen
DE3010557C2 (de) * 1980-03-19 1986-08-21 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zum Herstellen von großflächigen Siliziumkörpern für Solarzellen
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
DE3226931A1 (de) * 1982-07-19 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3231267A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
JPS5982466A (ja) * 1982-10-27 1984-05-12 信越化学工業株式会社 カ−ボン繊維の表面改質方法
US4554203A (en) * 1984-04-09 1985-11-19 Siemens Aktiengesellschaft Method for manufacturing large surface silicon crystal bodies for solar cells, and bodies so produced

Also Published As

Publication number Publication date
DE3560643D1 (en) 1987-10-22
EP0158181B1 (de) 1987-09-16
US4657627A (en) 1987-04-14
JPH0571152B2 (es) 1993-10-06
JPS60233818A (ja) 1985-11-20
EP0158181A1 (de) 1985-10-16

Similar Documents

Publication Publication Date Title
GR852679B (es)
GR852921B (es)
GR851131B (es)
GR851342B (es)
GR852041B (es)
GR850296B (es)
GR851394B (es)
GR852371B (es)
AT379850B (es)
GR850180B (es)
GR852107B (es)
GR851008B (es)
IN162075B (es)
IN162169B (es)
GR852509B (es)
IN159498B (es)
GR73966B (es)
GR74656B (es)
AU2219783A (es)
GR79622B (es)
AU2557584A (es)
GR74174B (es)
BG45166A1 (es)
BG45280A1 (es)
BG45334A1 (es)