IL99730A - התקני גלאי לקרנים איפראאדומות - Google Patents
התקני גלאי לקרנים איפראאדומותInfo
- Publication number
- IL99730A IL99730A IL9973091A IL9973091A IL99730A IL 99730 A IL99730 A IL 99730A IL 9973091 A IL9973091 A IL 9973091A IL 9973091 A IL9973091 A IL 9973091A IL 99730 A IL99730 A IL 99730A
- Authority
- IL
- Israel
- Prior art keywords
- level
- infrared
- elements
- detector
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 40
- 230000005855 radiation Effects 0.000 claims description 22
- 239000012141 concentrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 17
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 10
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 238000007654 immersion Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229920006332 epoxy adhesive Polymers 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000012925 reference material Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9022464A GB2248964A (en) | 1990-10-17 | 1990-10-17 | Plural-wavelength infrared detector devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL99730A0 IL99730A0 (en) | 1992-08-18 |
| IL99730A true IL99730A (he) | 1994-10-07 |
Family
ID=10683814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL9973091A IL99730A (he) | 1990-10-17 | 1991-10-14 | התקני גלאי לקרנים איפראאדומות |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5239179A (he) |
| EP (1) | EP0481552B1 (he) |
| JP (1) | JP2556944B2 (he) |
| DE (1) | DE69115834T2 (he) |
| GB (1) | GB2248964A (he) |
| IL (1) | IL99730A (he) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9116307D0 (en) * | 1991-07-29 | 1991-11-06 | Philips Electronic Associated | Infrared detectors |
| GB9204078D0 (en) * | 1992-02-26 | 1992-04-08 | Philips Electronics Uk Ltd | Infrared detector manufacture |
| US5633498A (en) * | 1993-03-29 | 1997-05-27 | Lucent Technologies Inc. | Thermodynamically optimal infrared collector with directional reduction of concentration |
| EP0719457B1 (en) * | 1993-09-17 | 1998-04-15 | Polaroid Corporation | Forming microlenses on solid state imager |
| FR2713017B1 (fr) * | 1993-11-23 | 1996-01-12 | Commissariat Energie Atomique | Détecteur de rayonnements dans deux bandes de longueurs d'ondes et procédé de fabrication de ce détecteur. |
| EP0680163A3 (en) * | 1994-04-25 | 1996-07-03 | At & T Corp | Integrated detector / photo transmitter with non-imaging director. |
| US5900630A (en) * | 1994-06-27 | 1999-05-04 | Raytheon Company | Radiation detection apparatus |
| US5583340A (en) * | 1995-06-08 | 1996-12-10 | The United States Of America, As Represented By The Secretary Of Commerce | Coupling apparatus for multimode infrared detectors |
| FR3026562A1 (fr) * | 1995-08-30 | 2016-04-01 | Commissariat Energie Atomique | Detecteur infrarouge mulispectral. |
| US7495220B2 (en) | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
| EP0861504A1 (en) * | 1995-11-15 | 1998-09-02 | Lockheed-Martin IR Imaging Systems | A dual-band multi-level microbridge detector |
| EP0865672B1 (en) * | 1995-12-04 | 2000-08-30 | Lockheed-Martin IR Imaging Systems | Infrared radiation detector having a reduced active area |
| US5694056A (en) * | 1996-04-01 | 1997-12-02 | Xilinx, Inc. | Fast pipeline frame full detector |
| US5721429A (en) * | 1996-07-23 | 1998-02-24 | Hughes Electronics | Self-focusing detector pixel structure having improved sensitivity |
| FR2756667B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques bispectral |
| FR2756666B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques |
| JPH10335618A (ja) * | 1997-05-20 | 1998-12-18 | Hewlett Packard Co <Hp> | 光センサ・アレイ |
| US6037590A (en) * | 1997-05-30 | 2000-03-14 | University Of Central Florida | Polarization-tunable antenna-coupled infrared detector |
| US6310346B1 (en) | 1997-05-30 | 2001-10-30 | University Of Central Florida | Wavelength-tunable coupled antenna uncooled infrared (IR) sensor |
| US6097031A (en) * | 1997-07-25 | 2000-08-01 | Honeywell Inc. | Dual bandwith bolometer |
| AU9617598A (en) * | 1997-10-29 | 1999-05-17 | Calum E. Macaulay | Apparatus and methods relating to spatially light modulated microscopy |
| US6034373A (en) * | 1997-12-11 | 2000-03-07 | Imrad Imaging Systems Ltd. | Semiconductor radiation detector with reduced surface effects |
| US6064067A (en) * | 1998-04-13 | 2000-05-16 | Wayne State University | High-gain infrared collector and data node |
| US6147349A (en) * | 1998-07-31 | 2000-11-14 | Raytheon Company | Method for fabricating a self-focusing detector pixel and an array fabricated in accordance with the method |
| US6236508B1 (en) * | 1999-03-03 | 2001-05-22 | The Boeing Company | Multicolor detector and focal plane array using diffractive lenses |
| JP2001068658A (ja) * | 1999-08-27 | 2001-03-16 | Sony Corp | 固体撮像装置及びその製造方法 |
| JP2003529068A (ja) * | 2000-03-29 | 2003-09-30 | シーメンス アクチエンゲゼルシヤフト | 放射熱を検出するための装置および該装置の製造方法並びに装置の適用 |
| GB0017659D0 (en) * | 2000-07-19 | 2000-09-06 | Secr Defence | Light emitting diode with lens |
| US6594422B2 (en) * | 2001-05-02 | 2003-07-15 | Motorola, Inc. | Opto-coupling device structure and method therefor |
| US6633716B2 (en) * | 2001-05-02 | 2003-10-14 | Motorola, Inc. | Optical device and method therefor |
| US7049597B2 (en) * | 2001-12-21 | 2006-05-23 | Andrew Bodkin | Multi-mode optical imager |
| US7796316B2 (en) * | 2001-12-21 | 2010-09-14 | Bodkin Design And Engineering Llc | Micro-optic shutter |
| US20060072109A1 (en) * | 2004-09-03 | 2006-04-06 | Andrew Bodkin | Hyperspectral imaging systems |
| US8174694B2 (en) * | 2001-12-21 | 2012-05-08 | Bodkin Design And Engineering Llc | Hyperspectral imaging systems |
| US7196790B2 (en) | 2002-03-18 | 2007-03-27 | Honeywell International Inc. | Multiple wavelength spectrometer |
| US7351977B2 (en) * | 2002-11-08 | 2008-04-01 | L-3 Communications Cincinnati Electronics Corporation | Methods and systems for distinguishing multiple wavelengths of radiation and increasing detected signals in a detection system using micro-optic structures |
| US7129488B2 (en) * | 2003-12-23 | 2006-10-31 | Sharp Laboratories Of America, Inc. | Surface-normal optical path structure for infrared photodetection |
| US7531363B2 (en) | 2003-12-30 | 2009-05-12 | Honeywell International Inc. | Particle detection using fluorescence |
| EP1564817A1 (en) * | 2004-02-10 | 2005-08-17 | Samsung Electronics Co., Ltd. | Photodiode having light-absorption part separated by PN junction and method of fabricating the same |
| US7095027B1 (en) * | 2004-02-25 | 2006-08-22 | University Of Central Florida Research Foundation, Inc. | Multispectral multipolarization antenna-coupled infrared focal plane array |
| JP2008103614A (ja) * | 2006-10-20 | 2008-05-01 | Mitsui Eng & Shipbuild Co Ltd | 光電変換デバイス |
| US8922783B2 (en) | 2007-04-27 | 2014-12-30 | Bodkin Design And Engineering Llc | Multiband spatial heterodyne spectrometer and associated methods |
| US8154732B2 (en) * | 2007-04-27 | 2012-04-10 | Bodkin Design And Engineering, Llc | Multiband spatial heterodyne spectrometer and associated methods |
| TWI356333B (en) * | 2008-03-21 | 2012-01-11 | Chimei Innolux Corp | Liquid crystal display and remote controlling syst |
| US7928389B1 (en) * | 2009-08-20 | 2011-04-19 | Hrl Laboratories, Llc | Wide bandwidth infrared detector and imager |
| US8946839B1 (en) | 2009-08-20 | 2015-02-03 | Hrl Laboratories, Llc | Reduced volume infrared detector |
| US7977637B1 (en) | 2009-08-20 | 2011-07-12 | Hrl Laboratories, Llc | Honeycomb infrared detector |
| CN102931201A (zh) * | 2011-08-11 | 2013-02-13 | 中国科学院微电子研究所 | 基于红外焦平面阵列的聚能微镜阵列及其制作方法 |
| US10677656B2 (en) | 2012-12-31 | 2020-06-09 | Flir Systems, Inc. | Devices and methods for infrared reference pixels |
| US9606016B2 (en) | 2012-12-31 | 2017-03-28 | Flir Systems, Inc. | Devices and methods for determining vacuum pressure levels |
| US9034734B2 (en) * | 2013-02-04 | 2015-05-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Systems and methods for plasma etching compound semiconductor (CS) dies and passively aligning the dies |
| US9490292B1 (en) | 2013-03-15 | 2016-11-08 | Hrl Laboratories, Llc | Dual-band detector array |
| US10903261B1 (en) | 2013-03-15 | 2021-01-26 | Hrl Laboratories, Llc | Triple output, dual-band detector |
| US10020331B1 (en) | 2016-07-21 | 2018-07-10 | Hrl Laboratories, Llc | Dual-band lateral-effect position sensor |
| US11624657B2 (en) * | 2018-08-10 | 2023-04-11 | Obsidian Sensors, Inc. | MEMS sensors and systems |
| US11282887B2 (en) * | 2019-04-11 | 2022-03-22 | Hrl Laboratories, Llc | Simultaneous dual-band image sensors |
| US11092701B1 (en) | 2020-07-07 | 2021-08-17 | GE Precision Healthcare LLC | Systems and methods for improved medical imaging |
| US11320545B2 (en) | 2020-07-07 | 2022-05-03 | GE Precision Healthcare LLC | Systems and methods for improved medical imaging |
| JP7138149B2 (ja) * | 2020-11-11 | 2022-09-15 | 浜松ホトニクス株式会社 | 受光装置、及び受光装置の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115375A (en) * | 1979-02-26 | 1980-09-05 | Matsushita Electric Ind Co Ltd | Light detector element |
| US4559695A (en) * | 1981-03-27 | 1985-12-24 | U.S. Philips Corporation | Method of manufacturing an infrared radiation imaging device |
| JPS5855909A (ja) * | 1981-09-29 | 1983-04-02 | Takeomi Suzuki | 光学像検出装置 |
| GB2116363B (en) * | 1982-03-03 | 1985-10-16 | Philips Electronic Associated | Multi-level infra-red detectors and their manufacture |
| US4629892A (en) * | 1982-12-22 | 1986-12-16 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Optically immersed detector assembly |
| DE3429812C1 (de) * | 1984-08-14 | 1986-04-10 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Monolithischer Bildaufnehmer |
| US4754139A (en) * | 1986-04-10 | 1988-06-28 | Aerojet-General Corporation | Uncooled high resolution infrared imaging plane |
| GB8715211D0 (en) * | 1987-06-29 | 1987-08-05 | Secr Defence | Lensed photo detector |
| JPH0265181A (ja) * | 1988-08-30 | 1990-03-05 | Fujitsu Ltd | 赤外線検知装置 |
-
1990
- 1990-10-17 GB GB9022464A patent/GB2248964A/en not_active Withdrawn
-
1991
- 1991-09-24 US US07/764,665 patent/US5239179A/en not_active Expired - Fee Related
- 1991-10-08 DE DE69115834T patent/DE69115834T2/de not_active Expired - Fee Related
- 1991-10-08 EP EP91202614A patent/EP0481552B1/en not_active Expired - Lifetime
- 1991-10-14 JP JP3264505A patent/JP2556944B2/ja not_active Expired - Lifetime
- 1991-10-14 IL IL9973091A patent/IL99730A/he not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2248964A (en) | 1992-04-22 |
| DE69115834T2 (de) | 1996-05-23 |
| JP2556944B2 (ja) | 1996-11-27 |
| GB9022464D0 (en) | 1991-02-20 |
| DE69115834D1 (de) | 1996-02-08 |
| JPH04260368A (ja) | 1992-09-16 |
| US5239179A (en) | 1993-08-24 |
| EP0481552B1 (en) | 1995-12-27 |
| IL99730A0 (en) | 1992-08-18 |
| EP0481552A1 (en) | 1992-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |