IL84683A - Ultra high-speed light activated microwave switch/modulator using photoreactive effect - Google Patents

Ultra high-speed light activated microwave switch/modulator using photoreactive effect

Info

Publication number
IL84683A
IL84683A IL84683A IL8468387A IL84683A IL 84683 A IL84683 A IL 84683A IL 84683 A IL84683 A IL 84683A IL 8468387 A IL8468387 A IL 8468387A IL 84683 A IL84683 A IL 84683A
Authority
IL
Israel
Prior art keywords
modulator
diode
ultra high
microwave switch
light activated
Prior art date
Application number
IL84683A
Other languages
English (en)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL84683A publication Critical patent/IL84683A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B2210/00—Indexing scheme relating to optical transmission systems
    • H04B2210/006—Devices for generating or processing an RF signal by optical means

Landscapes

  • Optical Communication System (AREA)
  • Light Receiving Elements (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
IL84683A 1986-12-31 1987-12-02 Ultra high-speed light activated microwave switch/modulator using photoreactive effect IL84683A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94833886A 1986-12-31 1986-12-31

Publications (1)

Publication Number Publication Date
IL84683A true IL84683A (en) 1993-01-14

Family

ID=25487685

Family Applications (1)

Application Number Title Priority Date Filing Date
IL84683A IL84683A (en) 1986-12-31 1987-12-02 Ultra high-speed light activated microwave switch/modulator using photoreactive effect

Country Status (3)

Country Link
JP (1) JPH01501829A (ja)
IL (1) IL84683A (ja)
WO (1) WO1988005212A2 (ja)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3221272A (en) * 1962-02-22 1965-11-30 Hitachi Ltd Variable-capacitance diode modulator
US3502884A (en) * 1966-12-19 1970-03-24 Rca Corp Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer
JPS5310452B2 (ja) * 1974-10-18 1978-04-13
US3976873A (en) * 1975-05-08 1976-08-24 The United States Of America As Represented By The Secretary Of The Navy Tunable electroabsorptive detector

Also Published As

Publication number Publication date
JPH01501829A (ja) 1989-06-22
WO1988005212A3 (en) 1989-11-02
WO1988005212A2 (en) 1988-07-14

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Legal Events

Date Code Title Description
RH Patent void