IL79505A0 - Double injection field effect transistors - Google Patents

Double injection field effect transistors

Info

Publication number
IL79505A0
IL79505A0 IL79505A IL7950586A IL79505A0 IL 79505 A0 IL79505 A0 IL 79505A0 IL 79505 A IL79505 A IL 79505A IL 7950586 A IL7950586 A IL 7950586A IL 79505 A0 IL79505 A0 IL 79505A0
Authority
IL
Israel
Prior art keywords
field effect
effect transistors
double injection
injection field
double
Prior art date
Application number
IL79505A
Other languages
English (en)
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IL79505A0 publication Critical patent/IL79505A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8122—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IL79505A 1985-07-26 1986-07-24 Double injection field effect transistors IL79505A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75963485A 1985-07-26 1985-07-26
US78859485A 1985-10-17 1985-10-17

Publications (1)

Publication Number Publication Date
IL79505A0 true IL79505A0 (en) 1986-10-31

Family

ID=27116708

Family Applications (1)

Application Number Title Priority Date Filing Date
IL79505A IL79505A0 (en) 1985-07-26 1986-07-24 Double injection field effect transistors

Country Status (9)

Country Link
EP (1) EP0212328A1 (pt)
KR (1) KR950001949B1 (pt)
CN (1) CN1009232B (pt)
AU (1) AU587845B2 (pt)
BR (1) BR8603571A (pt)
CA (1) CA1267965C (pt)
IL (1) IL79505A0 (pt)
IN (1) IN166919B (pt)
MX (1) MX169134B (pt)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114303056A (zh) * 2019-08-30 2022-04-08 太阳诱电株式会社 气体判断装置、气体判断方法和气体判断系统

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998656B2 (en) * 2003-02-07 2006-02-14 Hewlett-Packard Development Company, L.P. Transparent double-injection field-effect transistor
JP4679146B2 (ja) * 2002-08-07 2011-04-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電界効果トランジスタ
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
TW200501456A (en) * 2003-04-23 2005-01-01 Hoya Corp Light-emitting diode
KR100626036B1 (ko) 2004-11-17 2006-09-20 삼성에스디아이 주식회사 유기 발광 소자 및 상기 유기 발광 소자의 제조방법
DE102008044884A1 (de) * 2008-08-29 2010-03-04 Albert-Ludwigs-Universität Freiburg Verfahren zur Bestimmung der Rekombinationseigenschaften an einem Messteilbereich einer Messseite einer Halbleiterstruktur
WO2011118364A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5687885B2 (ja) * 2010-11-25 2015-03-25 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタおよび表示装置用電極基板の製造方法
TWI581466B (zh) * 2013-01-16 2017-05-01 隆達電子股份有限公司 發光二極體晶片結構及發光二極體元件
US10281421B2 (en) 2014-02-14 2019-05-07 Universite Du Quebec A Chicoutimi Method for analyzing an anode and device thereof
CN106960864A (zh) * 2017-03-15 2017-07-18 四川太锦信息技术有限公司 一种关于执法记录仪oled栅极的器件
CN109728101A (zh) * 2017-10-30 2019-05-07 中国科学院宁波材料技术与工程研究所 场效应晶体管、显示元件、图像显示装置及其制作方法
US10224430B1 (en) 2017-12-06 2019-03-05 International Business Machines Corporation Thin film transistors with epitaxial source/drain and drain field relief

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1497548A (fr) * 1966-07-22 1967-10-13 Jeumont Schneider Dispositif semi-conducteur bistable pour courants forts
US3680204A (en) * 1969-12-12 1972-08-01 Massachusetts Inst Technology Solid state device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114303056A (zh) * 2019-08-30 2022-04-08 太阳诱电株式会社 气体判断装置、气体判断方法和气体判断系统

Also Published As

Publication number Publication date
CA1267965A (en) 1990-04-17
CN86105609A (zh) 1987-04-29
CA1267965C (en) 1990-04-17
CN1009232B (zh) 1990-08-15
KR870001673A (ko) 1987-03-17
IN166919B (pt) 1990-08-04
AU587845B2 (en) 1989-08-31
BR8603571A (pt) 1987-03-04
AU6058486A (en) 1987-01-29
MX169134B (es) 1993-06-23
EP0212328A1 (en) 1987-03-04
KR950001949B1 (ko) 1995-03-07

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