CN106960864A - 一种关于执法记录仪oled栅极的器件 - Google Patents

一种关于执法记录仪oled栅极的器件 Download PDF

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CN106960864A
CN106960864A CN201710155147.1A CN201710155147A CN106960864A CN 106960864 A CN106960864 A CN 106960864A CN 201710155147 A CN201710155147 A CN 201710155147A CN 106960864 A CN106960864 A CN 106960864A
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oled
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张光浩
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Sichuan Brocade Information Technology Co Ltd
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    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78672Polycrystalline or microcrystalline silicon transistor
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

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Abstract

本发明公开了一种关于执法记录仪OLED栅极的器件,包括基板,所述基板通过粘贴剂与封装层连接,形成矩形腔室,所述基板表面包括发光层和薄膜二极管,还包括栅极,所述栅极连接在有机电致发光器件外部,位于有机电致发光层的有效发光领域之外。这种传统的平板显示装置中,特别是有机电致发光显示装置具有可以显示可见光内所有领域的光的优点.高亮度及低工作电压特性,高对比度,工序简单,对环境的污染度较低,高响应速度,视角无限制,并在低温下也可稳定工作,驱动电路的制作及设计较容易等优点,因此:进年来,作为引领下一代的平板显示装置现在备受瞩目。但是现有的有机电致发光器件的栅极安装在其内部。

Description

一种关于执法记录仪OLED栅极的器件
技术领域
本发明涉及一种有机电致发光器件,具体涉及一种关于执法记录仪OLED栅极的器件。
背景技术
OLED,即有机发光二极管,又称为有机电激光显示。因为具备轻薄、省电等特性,因此从2003年开始,这种显示设备在MP3播放器上得到了广泛应用,而对于同属数码类产品的DC与手机,此前只是在一些展会上展示过采用OLED屏幕的工程样品,还并未走入实际应用的阶段。但OLED屏幕却具备了许多LCD不可比拟的优势。目前在OLED的二大技术体系中,低分子OLED技术为日本掌握,而高分子的PLED,LG手机的所谓OEL就是这个体系,技术及专利则由英国的科技公司CDT掌握,两者相比PLED产品的彩色化上仍有困难。而低分子OLED则较易彩色化,不久前三星就发布了65530色的手机用OLED。不过,虽然将来技术更优秀的OLED会取代TFT等LCD,但有机发光显示技术还存在使用寿命短、屏幕大型化难等缺陷。目前采用OLED的主要是三星如新上市的SCH-X339就采用了256色的OLED,以及索尼发布的次时代掌机PSV,至于OEL则主要被LG采用在其CU8180 8280上我们都有见到。为了说明OLED构造,可以将每个OLED单元比做一块汉堡包,发光材料就是夹在中间的蔬菜。每个OLED的显示单元都能受控制地产生三种不同颜色的光。OLED与LCD一样,也有主动式和被动式之分。被动方式下由行列地址选中的单元被点亮。主动方式下,OLED单元后有一个薄膜晶体管(TFT),发光单元在TFT驱动下点亮。主动式OLED应该比被动式OLED省电,且显示性能更佳近年来,随着对电子,电子设备需求的剧增,如等离子体显示装置,液晶显示器,有机发光器件等各种平板显示器的功能同时也继续迅速发展。
这种传统的平板显示装置中,特别是有机电致发光显示装置具有可以显示可见光内所有领域的光的优点.高亮度及低工作电压特性,高对比度,工序简单,对环境的污染度较低,高响应速度,视角无限制,并在低温下也可稳定工作,驱动电路的制作及设计较容易等优点,因此:进年来,作为引领下一代的平板显示装置现在备受瞩目。
但是现有的有机电致发光器件的栅极安装在其内部,薄膜晶体管用自己的有源层采用P-沟道的多晶硅,有机电致发光层放射出的光线不仅随着基板方向放出,并且还从封装层方向射出,会经过栅极,影响出光。
发明内容
本发明所要解决的技术问题是有机电致发光层放射出的光线不仅随着基板方向放出,并且还从封装层方向射出,会经过栅极,影响出光,目的在于提供一种关于执法记录仪OLED栅极的器件,解决有机电致发光层放射出的光线不仅随着基板方向放出,并且还从封装层方向射出,会经过栅极,影响出光的问题。
本发明通过下述技术方案实现:
一种关于执法记录仪OLED栅极的器件,包括基板,所述基板通过粘贴剂与封装层连接,形成矩形腔室,所述基板表面包括发光层和薄膜二极管,还包括栅极,所述栅极连接在有机电致发光器件外部,位于有机电致发光层的有效发光领域之外。这种传统的平板显示装置中,特别是有机电致发光显示装置具有可以显示可见光内所有领域的光的优点.高亮度及低工作电压特性,高对比度,工序简单,对环境的污染度较低,高响应速度,视角无限制,并在低温下也可稳定工作,驱动电路的制作及设计较容易等优点,因此:进年来,作为引领下一代的平板显示装置现在备受瞩目。但是现有的有机电致发光器件的栅极安装在其内部,薄膜晶体管用自己的有源层采用P-沟道的多晶硅,有机电致发光层放射出的光线不仅随着基板方向放出,并且还从封装层方向射出,会经过栅极,影响出光,本发明所要解决的技术问题是有机电致发光层放射出的光线不仅随着基板方向放出,并且还从封装层方向射出,会经过栅极,影响出光,目的在于提供一种关于执法记录仪OLED栅极的器件,改变栅极的位置,使得光线的传输,不经过栅极,薄膜晶体管采用P-channel多晶硅做自己的活性层,使得光线传输效果达到最佳。
所述基板与封装层连接为密封封装。基板和粘结剂之间以密封封装基板,氧气,水分等的外部不纯物保护有机电致发光层的封装层采取整合结构。
所述发光层包括阴极电极层、有机发光层和阳极电机层,阴极电极层由反射率高的金属层形成,以发挥其扫描电极的作用,阳极电极层由铟、锡、锌氧化物。
所述薄膜二极管包括开关薄膜晶体管和驱动薄膜晶体管,作为本发明的优选方案,采用开关薄膜晶体管,通过自己的有源层,在工序效率性方面显示出自己的优点。
所述栅极包括氧化钙,厚度包括100A-20000A,自然地形成透明的有机薄膜结构。
本发明与现有技术相比,具有如下的优点和有益效果:
1、本发明一种关于执法记录仪OLED栅极的器件,改变栅极的位置,使得光线的传输,不经过栅极,使得光线传输效果达到最佳;
2、本发明一种关于执法记录仪OLED栅极的器件,薄膜晶体管采用P-channel多晶硅做自己的活性层;
3、本发明一种关于执法记录仪OLED栅极的器件,阴极电极层由反射率高的金属层形成,以发挥其扫描电极的作用,阳极电极层由铟、锡、锌氧化物。
附图说明
此处所说明的附图用来提供对本发明实施例的进一步理解,构成本申请的一部分,并不构成对本发明实施例的限定。在附图中:
图1为本发明结构示意图;
图2为传统有机电致发光器件栅极装置结构示意图。
附图中标记及对应的零部件名称:
1-粘贴剂,2-基板,3-封装层,4-栅极,5-发光层,6-薄膜二极管。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,下面结合实施例和附图,对本发明作进一步的详细说明,本发明的示意性实施方式及其说明仅用于解释本发明,并不作为对本发明的限定。
实施例
如图1所示,本发明一种关于执法记录仪OLED栅极的器件,包括基板2,所述基板2通过粘贴剂1与封装层3连接,所述基板2表面包括发光层5和薄膜二极管6,还包括栅极4,所述栅极4连接在有机电致发光器件外部,位于有机电致发光层5的有效发光领域之外。所述基板2与封装层3连接为密封封装。所述发光层5包括阴极电极层、有机发光层和阳极电机层。所述薄膜二极管6包括开关薄膜晶体管和驱动薄膜晶体管。所述栅极4包括氧化钙,厚度包括100A-20000A。工作时:本发明所要解决的技术问题是有机电致发光层放射出的光线不仅随着基板方向放出,并且还从封装层方向射出,会经过栅极,影响出光,目的在于提供一种关于执法记录仪OLED栅极的器件,基板和粘结剂之间以密封封装基板,氧气,水分等的外部不纯物保护有机电致发光层的封装层采取整合结构,改变栅极的位置,使得光线的传输,不经过栅极,薄膜晶体管采用P-channel多晶硅做自己的活性层,所述薄膜二极管采用开关薄膜晶体管,使得光线传输效果达到最佳。
以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式而已,并不用于限定本发明的保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (5)

1.一种关于执法记录仪OLED栅极的器件,包括基板(2),所述基板(2)通过粘贴剂(1)与封装层(3)连接,所述基板(2)表面包括发光层(5)和薄膜二极管(6),其特征在于:还包括栅极(4),所述栅极(4)连接在有机电致发光器件外部,位于有机电致发光层(5)的有效发光领域之外。
2.根据权利要求1所述的一种关于执法记录仪OLED栅极的器件,其特征在于:所述基板(2)与封装层(3)连接为密封封装。
3.根据权利要求1所述的一种关于执法记录仪OLED栅极的器件,其特征在于:所述发光层(5)包括阴极电极层、有机发光层和阳极电机层。
4.根据权利要求1所述的一种关于执法记录仪OLED栅极的器件,其特征在于:所述薄膜二极管(6)包括开关薄膜晶体管和驱动薄膜晶体管。
5.根据权利要求1所述的一种关于执法记录仪OLED栅极的器件,其特征在于:所述栅极(4)包括氧化钙,厚度包括100A-20000A。
CN201710155147.1A 2017-03-15 2017-03-15 一种关于执法记录仪oled栅极的器件 Pending CN106960864A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86105609A (zh) * 1985-07-26 1987-04-29 能量转换装置公司 双注入场效应晶体管
US20110019043A1 (en) * 2009-07-23 2011-01-27 Sony Corporation Solid-state imaging device, and camera
CN204706915U (zh) * 2015-06-16 2015-10-14 深圳警翼数码科技有限公司 采集工作站、执法记录仪以及充电电路
CN105094418A (zh) * 2014-05-20 2015-11-25 辛纳普蒂克斯公司 用矩阵传感器检测有源笔的系统和方法
CN206505950U (zh) * 2017-03-13 2017-09-19 四川太锦信息技术有限公司 一种关于有机电致发光器件的栅极装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86105609A (zh) * 1985-07-26 1987-04-29 能量转换装置公司 双注入场效应晶体管
US20110019043A1 (en) * 2009-07-23 2011-01-27 Sony Corporation Solid-state imaging device, and camera
CN105094418A (zh) * 2014-05-20 2015-11-25 辛纳普蒂克斯公司 用矩阵传感器检测有源笔的系统和方法
CN204706915U (zh) * 2015-06-16 2015-10-14 深圳警翼数码科技有限公司 采集工作站、执法记录仪以及充电电路
CN206505950U (zh) * 2017-03-13 2017-09-19 四川太锦信息技术有限公司 一种关于有机电致发光器件的栅极装置

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