IL76963A0 - Method of growing crystalline layers by vapour phase epitaxy - Google Patents

Method of growing crystalline layers by vapour phase epitaxy

Info

Publication number
IL76963A0
IL76963A0 IL76963A IL7696385A IL76963A0 IL 76963 A0 IL76963 A0 IL 76963A0 IL 76963 A IL76963 A IL 76963A IL 7696385 A IL7696385 A IL 7696385A IL 76963 A0 IL76963 A0 IL 76963A0
Authority
IL
Israel
Prior art keywords
phase epitaxy
vapour phase
crystalline layers
growing crystalline
growing
Prior art date
Application number
IL76963A
Other languages
English (en)
Original Assignee
Secr Defence Brit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secr Defence Brit filed Critical Secr Defence Brit
Publication of IL76963A0 publication Critical patent/IL76963A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/048—Energy beam assisted EPI growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
IL76963A 1984-11-06 1985-11-06 Method of growing crystalline layers by vapour phase epitaxy IL76963A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB848428032A GB8428032D0 (en) 1984-11-06 1984-11-06 Growth of crystalline layers

Publications (1)

Publication Number Publication Date
IL76963A0 true IL76963A0 (en) 1986-04-29

Family

ID=10569309

Family Applications (1)

Application Number Title Priority Date Filing Date
IL76963A IL76963A0 (en) 1984-11-06 1985-11-06 Method of growing crystalline layers by vapour phase epitaxy

Country Status (7)

Country Link
US (1) US4950621A (de)
EP (1) EP0200766B1 (de)
JP (1) JPS62500716A (de)
DE (1) DE3568460D1 (de)
GB (1) GB8428032D0 (de)
IL (1) IL76963A0 (de)
WO (1) WO1986002951A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691020B2 (ja) * 1986-02-14 1994-11-14 日本電信電話株式会社 気相成長方法および装置
GB2203757B (en) * 1987-04-16 1991-05-22 Philips Electronic Associated Electronic device manufacture
GB2211209A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of forming a defect mixed oxide
EP0365199A3 (de) * 1988-10-19 1990-10-31 AT&T Corp. Verfahren zum Aufwachsen aus der Gasphase mit organischen Verbindungen der V-Hauptgruppe
EP0419939B1 (de) * 1989-09-12 1994-02-23 Stec Inc. Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen
US5079192A (en) * 1990-08-24 1992-01-07 Texas Instruments Incorporated Method of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vapor
US5123995A (en) * 1990-10-04 1992-06-23 Aerodyne Research, Inc. Low-temperature, photo-induced epitaxy
US5306660A (en) * 1991-02-19 1994-04-26 Rockwell International Corporation Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
US5354708A (en) * 1992-06-04 1994-10-11 Taskar Nikhil R Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5547897A (en) * 1993-07-14 1996-08-20 Philips Electronics North America Corporation Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
JP2771472B2 (ja) * 1994-05-16 1998-07-02 松下電器産業株式会社 半導体装置の製造方法
JP3271225B2 (ja) * 1994-05-31 2002-04-02 ソニー株式会社 Ｉｉ−ｖｉ族化合物半導体の成長方法
US5531183A (en) * 1994-07-13 1996-07-02 Applied Materials, Inc. Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP4757370B2 (ja) * 2000-05-30 2011-08-24 住友化学株式会社 エピタキシャル基板の製造方法
US6443435B1 (en) 2000-10-23 2002-09-03 Applied Materials, Inc. Vaporization of precursors at point of use
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
GB0407804D0 (en) * 2004-04-06 2004-05-12 Qinetiq Ltd Manufacture of cadmium mercury telluride
US7892879B2 (en) * 2004-08-02 2011-02-22 Qinetiq Limited Manufacture of cadmium mercury telluride on patterned silicon
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4062706A (en) * 1976-04-12 1977-12-13 Robert Arthur Ruehrwein Process for III-V compound epitaxial crystals utilizing inert carrier gas
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
DE3375590D1 (en) * 1982-06-22 1988-03-10 Hughes Aircraft Co Low temperature process for depositing epitaxial layers
US4454835A (en) * 1982-09-13 1984-06-19 The United States Of America As Represented By The Secretary Of The Navy Internal photolysis reactor
US4439267A (en) * 1982-09-29 1984-03-27 The United States Of America As Represented By The Secretary Of The Army Vapor-phase method for growing mercury cadmium telluride
DE3379059D1 (en) * 1982-10-19 1989-03-02 Secr Defence Brit Organometallic chemical vapour deposition of films
JPS59164697A (ja) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 気相成長方法
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
US4645689A (en) * 1984-02-17 1987-02-24 At&T Bell Laboratories Deposition technique
US4524090A (en) * 1984-04-30 1985-06-18 The United States Of America As Represented By The Secretary Of The Navy Deposition of compounds from multi-component organo-metals
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
JP3736864B2 (ja) * 1994-06-16 2006-01-18 株式会社パイオラックス 管状器官への挿入具

Also Published As

Publication number Publication date
DE3568460D1 (en) 1989-04-06
WO1986002951A1 (en) 1986-05-22
GB8428032D0 (en) 1984-12-12
EP0200766A1 (de) 1986-11-12
JPS62500716A (ja) 1987-03-26
EP0200766B1 (de) 1989-03-01
US4950621A (en) 1990-08-21

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