DE3569395D1 - Process and reactor for vapour phase epitaxial growth - Google Patents

Process and reactor for vapour phase epitaxial growth

Info

Publication number
DE3569395D1
DE3569395D1 DE8585401261T DE3569395T DE3569395D1 DE 3569395 D1 DE3569395 D1 DE 3569395D1 DE 8585401261 T DE8585401261 T DE 8585401261T DE 3569395 T DE3569395 T DE 3569395T DE 3569395 D1 DE3569395 D1 DE 3569395D1
Authority
DE
Germany
Prior art keywords
reactor
epitaxial growth
vapour phase
phase epitaxial
vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585401261T
Other languages
German (de)
Inventor
Andrei Mircea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3569395D1 publication Critical patent/DE3569395D1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
DE8585401261T 1984-06-27 1985-06-24 Process and reactor for vapour phase epitaxial growth Expired DE3569395D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8410154A FR2566808B1 (en) 1984-06-27 1984-06-27 METHOD AND REACTOR FOR EPITAXIAL VAPOR GROWTH

Publications (1)

Publication Number Publication Date
DE3569395D1 true DE3569395D1 (en) 1989-05-18

Family

ID=9305514

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585401261T Expired DE3569395D1 (en) 1984-06-27 1985-06-24 Process and reactor for vapour phase epitaxial growth

Country Status (5)

Country Link
US (1) US4714594A (en)
EP (1) EP0173591B1 (en)
JP (1) JPS6114719A (en)
DE (1) DE3569395D1 (en)
FR (1) FR2566808B1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974543A (en) * 1986-02-28 1990-12-04 Xerox Corporation Apparatus for amorphous silicon film
US4993355A (en) * 1987-03-31 1991-02-19 Epsilon Technology, Inc. Susceptor with temperature sensing device
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5117769A (en) * 1987-03-31 1992-06-02 Epsilon Technology, Inc. Drive shaft apparatus for a susceptor
US4821674A (en) * 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US4846102A (en) * 1987-06-24 1989-07-11 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5044315A (en) * 1987-06-24 1991-09-03 Epsilon Technology, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5244694A (en) * 1987-06-24 1993-09-14 Advanced Semiconductor Materials America, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5261960A (en) * 1987-06-24 1993-11-16 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5096534A (en) * 1987-06-24 1992-03-17 Epsilon Technology, Inc. Method for improving the reactant gas flow in a reaction chamber
GB2220679A (en) * 1987-09-09 1990-01-17 Edward William Johnson Apparatus for thin film deposition of aerosol particles by thermolytic decomposition
ATE75346T1 (en) * 1988-11-07 1992-05-15 Balzers Hochvakuum PERFORMANCE FOR APPLYING RF ENERGY AND THEIR USE.
US5198411A (en) * 1988-12-02 1993-03-30 Hewlett-Packard Company Chemical vapor phase method for forming thin films of high temperature oxide superconductors
US5002630A (en) * 1989-06-06 1991-03-26 Rapro Technology Method for high temperature thermal processing with reduced convective heat loss
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5356476A (en) * 1992-06-15 1994-10-18 Materials Research Corporation Semiconductor wafer processing method and apparatus with heat and gas flow control
IT1271233B (en) * 1994-09-30 1997-05-27 Lpe EPITAXIAL REACTOR EQUIPPED WITH FLAT DISCOID SUSCEPECTOR AND HAVING GAS FLOW PARALLEL TO THE SUBSTRATES
JPH1021586A (en) * 1996-07-02 1998-01-23 Sony Corp Dc sputtering device
JP4009100B2 (en) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 Substrate heating apparatus and substrate heating method
US20050092246A1 (en) * 2002-02-22 2005-05-05 Peter Baumann Device for depositing thin layers with a wireless detection of process parameters
KR100937540B1 (en) * 2002-03-13 2010-01-19 스미토모덴키고교가부시키가이샤 Holder for semiconductor production system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436255A (en) * 1965-07-06 1969-04-01 Monsanto Co Electric resistance heaters
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device
DE2445146C3 (en) * 1974-09-20 1979-03-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Method and apparatus for forming epitaxial layers
US3981791A (en) * 1975-03-10 1976-09-21 Signetics Corporation Vacuum sputtering apparatus
US4063974A (en) * 1975-11-14 1977-12-20 Hughes Aircraft Company Planar reactive evaporation method for the deposition of compound semiconducting films
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
US4222345A (en) * 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
US4284033A (en) * 1979-10-31 1981-08-18 Rca Corporation Means to orbit and rotate target wafers supported on planet member
JPS5969142A (en) * 1982-10-13 1984-04-19 Toshiba Corp Method and device for forming film

Also Published As

Publication number Publication date
EP0173591A1 (en) 1986-03-05
EP0173591B1 (en) 1989-04-12
FR2566808B1 (en) 1986-09-19
JPS6114719A (en) 1986-01-22
FR2566808A1 (en) 1986-01-03
US4714594A (en) 1987-12-22

Similar Documents

Publication Publication Date Title
DE3569395D1 (en) Process and reactor for vapour phase epitaxial growth
GB8702152D0 (en) Container for growing plants
HUT40760A (en) Process for preparing regularly evolving implantable regulator-peptide preparations
AU589373B2 (en) Growth hormone factor analogs and process therefore
HUT43626A (en) Process for producing factors of growth
GB2144337B (en) Process for epitaxial growth
GB2147484B (en) Containers for growth plants
EP0320970A3 (en) Vapour-phase epitaxial growth process
EP0233610A3 (en) Method and apparatus for vapor deposition
ZA877267B (en) Process and catalyst system for trimerising acetylene and acetylene compounds
DE3266375D1 (en) Method and apparatus for vapor phase growth of a semiconductor
DE3167025D1 (en) Method of vapor phase growth of gaas
HUT37932A (en) Process for preparing 4-hydroxy-2h-1-benzo-thiopyrane-2-one-derivatives and for preparing rhodenticide preparations comprising such compounds
EP0296804A3 (en) Process for epitaxial deposition of silicone
EG16846A (en) Process for hair growth modification
GB2168080B (en) Vapour deposition apparatus and epitaxial layer growth methods
ZA872974B (en) 1-phenylimidazole compounds,a process for the preparation of these,and the use of these as growth regulators
PT83293B (en) Process for preparing dihidropyridine-2-hydroxyamines useful asmedicaments
GB8505235D0 (en) Containers for growing plants
HUT44586A (en) Process for preparing modified polypropylene
DE3370837D1 (en) Liquid phase epitaxial growth method
DE3564435D1 (en) Process for preparing phosphoric-acid derivatives and intermediate compounds
YU218086A (en) Process for preparing herbicidically effective imidazolynones
DE3065468D1 (en) Process for purifying group iii elements and epitaxial growth of semiconductor compounds
DE3564948D1 (en) Process for preparing phosphoric-acid derivatives and intermediate compounds

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee