IL76431A - Fault tolerant memory array - Google Patents

Fault tolerant memory array

Info

Publication number
IL76431A
IL76431A IL75431A IL7643185A IL76431A IL 76431 A IL76431 A IL 76431A IL 75431 A IL75431 A IL 75431A IL 7643185 A IL7643185 A IL 7643185A IL 76431 A IL76431 A IL 76431A
Authority
IL
Israel
Prior art keywords
memory array
fault tolerant
tolerant memory
fault
array
Prior art date
Application number
IL75431A
Other languages
English (en)
Other versions
IL76431A0 (en
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of IL76431A0 publication Critical patent/IL76431A0/xx
Publication of IL76431A publication Critical patent/IL76431A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
IL75431A 1984-09-28 1985-09-19 Fault tolerant memory array IL76431A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/655,854 US4692923A (en) 1984-09-28 1984-09-28 Fault tolerant memory

Publications (2)

Publication Number Publication Date
IL76431A0 IL76431A0 (en) 1986-01-31
IL76431A true IL76431A (en) 1989-03-31

Family

ID=24630661

Family Applications (1)

Application Number Title Priority Date Filing Date
IL75431A IL76431A (en) 1984-09-28 1985-09-19 Fault tolerant memory array

Country Status (7)

Country Link
US (1) US4692923A (ja)
EP (1) EP0199744B1 (ja)
JP (1) JPH0752596B2 (ja)
CA (1) CA1238715A (ja)
DE (2) DE199744T1 (ja)
IL (1) IL76431A (ja)
WO (1) WO1986002182A1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE67892T1 (de) * 1985-09-11 1991-10-15 Siemens Ag Integrierter halbleiterspeicher.
JPH01171199A (ja) * 1987-12-25 1989-07-06 Mitsubishi Electric Corp 半導体メモリ
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JPH0814985B2 (ja) * 1989-06-06 1996-02-14 富士通株式会社 半導体記憶装置
US5128941A (en) * 1989-12-20 1992-07-07 Bull Hn Information Systems Inc. Method of organizing a memory for fault tolerance
US5357521A (en) * 1990-02-14 1994-10-18 International Business Machines Corporation Address sensitive memory testing
US5392288A (en) * 1991-02-08 1995-02-21 Quantum Corporation Addressing technique for a fault tolerant block-structured storage device
JPH0520896A (ja) * 1991-07-16 1993-01-29 Mitsubishi Electric Corp 半導体記憶装置
US5289377A (en) * 1991-08-12 1994-02-22 Trw Inc. Fault-tolerant solid-state flight data recorder
US5347519A (en) * 1991-12-03 1994-09-13 Crosspoint Solutions Inc. Preprogramming testing in a field programmable gate array
KR950003013B1 (ko) * 1992-03-30 1995-03-29 삼성전자 주식회사 틀림정정회로를 가지는 이이피롬
KR960000681B1 (ko) * 1992-11-23 1996-01-11 삼성전자주식회사 반도체메모리장치 및 그 메모리쎌 어레이 배열방법
JP2967021B2 (ja) * 1993-01-25 1999-10-25 株式会社東芝 半導体メモリ装置
EP0608829B1 (en) * 1993-01-25 2000-05-17 Kabushiki Kaisha Toshiba Semiconductor memory apparatus having a plurality of word line drive circuits
JP4802515B2 (ja) * 2005-03-01 2011-10-26 株式会社日立製作所 半導体装置
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
KR20080080882A (ko) * 2007-03-02 2008-09-05 삼성전자주식회사 Ecc용 레이어를 구비하는 다층 구조 반도체 메모리 장치및 이를 이용하는 에러 검출 및 정정 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644902A (en) * 1970-05-18 1972-02-22 Ibm Memory with reconfiguration to avoid uncorrectable errors
US3898443A (en) * 1973-10-29 1975-08-05 Bell Telephone Labor Inc Memory fault correction system
US4321695A (en) * 1979-11-23 1982-03-23 Texas Instruments Incorporated High speed serial access semiconductor memory with fault tolerant feature
US4335459A (en) * 1980-05-20 1982-06-15 Miller Richard L Single chip random access memory with increased yield and reliability
US4412314A (en) * 1980-06-02 1983-10-25 Mostek Corporation Semiconductor memory for use in conjunction with error detection and correction circuit
JPS58139399A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 半導体記憶装置
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4562576A (en) * 1982-08-14 1985-12-31 International Computers Limited Data storage apparatus
US4602354A (en) * 1983-01-10 1986-07-22 Ncr Corporation X-and-OR memory array
JPS59165300A (ja) * 1983-03-10 1984-09-18 Fujitsu Ltd メモリ障害訂正方式
US4542454A (en) * 1983-03-30 1985-09-17 Advanced Micro Devices, Inc. Apparatus for controlling access to a memory

Also Published As

Publication number Publication date
WO1986002182A1 (en) 1986-04-10
EP0199744A1 (en) 1986-11-05
DE3577151D1 (de) 1990-05-17
US4692923A (en) 1987-09-08
IL76431A0 (en) 1986-01-31
DE199744T1 (de) 1987-03-19
CA1238715A (en) 1988-06-28
JPS62500332A (ja) 1987-02-05
EP0199744B1 (en) 1990-04-11
JPH0752596B2 (ja) 1995-06-05

Similar Documents

Publication Publication Date Title
GB2166592B (en) Semiconductor memory array
EP0434589A3 (en) Fault tolerant memory
EP0190813A3 (en) Processing cell for fault tolerant arrays
GB8403612D0 (en) Sweetener
IL76431A0 (en) Fault tolerant memory array
DE3567773D1 (en) Nonvolatile memory cell
GB8512986D0 (en) Non-volatile memory circuit
GB2184268B (en) Fault tolerant memory system
DE3277096D1 (en) Memory array
GB8503284D0 (en) Sweetener
GB2153557B (en) Array processor
EP0179351A3 (en) Semiconductor memory
EP0186745A3 (en) Memory array
EP0186911A3 (en) Reversible memory system
IL65529A0 (en) Memory array
GB8432186D0 (en) Dipole array
DE3175539D1 (en) Memory array fault locator
GB2166313B (en) Improved memory cell
EP0220577A3 (en) Memory array
EP0071042A3 (en) Memory array
DE3279355D1 (en) Memory array
GB8401628D0 (en) Data processor arrays
GB8508113D0 (en) Semiconductor memory
GB8423366D0 (en) Row unit
GB8522013D0 (en) Memory cells

Legal Events

Date Code Title Description
HP Change in proprietorship
KB Patent renewed
KB Patent renewed
EXP Patent expired