IL63755A - Photoresponsive amorphous alloys having increased band gap,their production and devices made therefrom - Google Patents

Photoresponsive amorphous alloys having increased band gap,their production and devices made therefrom

Info

Publication number
IL63755A
IL63755A IL63755A IL6375581A IL63755A IL 63755 A IL63755 A IL 63755A IL 63755 A IL63755 A IL 63755A IL 6375581 A IL6375581 A IL 6375581A IL 63755 A IL63755 A IL 63755A
Authority
IL
Israel
Prior art keywords
production
band gap
made therefrom
devices made
amorphous alloys
Prior art date
Application number
IL63755A
Other languages
English (en)
Other versions
IL63755A0 (en
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/185,520 external-priority patent/US4342044A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IL63755A0 publication Critical patent/IL63755A0/xx
Publication of IL63755A publication Critical patent/IL63755A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1604—Amorphous materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
IL63755A 1980-09-09 1981-09-07 Photoresponsive amorphous alloys having increased band gap,their production and devices made therefrom IL63755A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/185,520 US4342044A (en) 1978-03-08 1980-09-09 Method for optimizing photoresponsive amorphous alloys and devices
US20647680A 1980-11-13 1980-11-13

Publications (2)

Publication Number Publication Date
IL63755A0 IL63755A0 (en) 1981-12-31
IL63755A true IL63755A (en) 1984-07-31

Family

ID=26881209

Family Applications (1)

Application Number Title Priority Date Filing Date
IL63755A IL63755A (en) 1980-09-09 1981-09-07 Photoresponsive amorphous alloys having increased band gap,their production and devices made therefrom

Country Status (14)

Country Link
KR (1) KR890000479B1 (ko)
AU (1) AU541939B2 (ko)
BR (1) BR8105746A (ko)
CA (1) CA1192817A (ko)
DE (1) DE3135412C2 (ko)
ES (1) ES505269A0 (ko)
FR (1) FR2490019B1 (ko)
GB (1) GB2083704B (ko)
IE (1) IE52208B1 (ko)
IL (1) IL63755A (ko)
IN (1) IN157494B (ko)
IT (1) IT1138204B (ko)
NL (1) NL8104139A (ko)
SE (1) SE8105278L (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
FR2490018B1 (fr) * 1980-09-09 1986-01-17 Energy Conversion Devices Inc Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus
FR2490013B1 (fr) * 1980-09-09 1985-11-08 Energy Conversion Devices Inc Dispositif amorphe photosensible a cellules multiples
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPS59111152A (ja) * 1982-12-16 1984-06-27 Sharp Corp 電子写真用感光体
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
US4572882A (en) * 1983-09-09 1986-02-25 Canon Kabushiki Kaisha Photoconductive member containing amorphous silicon and germanium
EP0151754B1 (en) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. An improved method of making a photoconductive member
JPH0624238B2 (ja) * 1985-04-16 1994-03-30 キヤノン株式会社 フォトセンサアレイの製造方法
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
US4887134A (en) * 1986-09-26 1989-12-12 Canon Kabushiki Kaisha Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
JP3119131B2 (ja) * 1995-08-01 2000-12-18 トヨタ自動車株式会社 シリコン薄膜の製造方法及びこの方法を用いた太陽電池の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices

Also Published As

Publication number Publication date
IN157494B (ko) 1986-04-12
GB2083704B (en) 1985-08-21
IT8123828A0 (it) 1981-09-07
DE3135412A1 (de) 1982-08-12
FR2490019A1 (fr) 1982-03-12
ES8302362A1 (es) 1982-12-16
NL8104139A (nl) 1982-04-01
IL63755A0 (en) 1981-12-31
FR2490019B1 (fr) 1985-10-31
KR890000479B1 (ko) 1989-03-18
ES505269A0 (es) 1982-12-16
KR830008407A (ko) 1983-11-18
IE812064L (en) 1982-03-09
BR8105746A (pt) 1982-05-25
SE8105278L (sv) 1982-03-10
CA1192817A (en) 1985-09-03
AU541939B2 (en) 1985-01-31
GB2083704A (en) 1982-03-24
DE3135412C2 (de) 1985-11-21
IE52208B1 (en) 1987-08-05
AU7502081A (en) 1982-03-18
IT1138204B (it) 1986-09-17

Similar Documents

Publication Publication Date Title
IL63752A (en) Photoresponsive amorphous alloys,their production and devices made therefrom
DE3176731D1 (en) 1-sulfo-2-oxoazetidine derivatives, their production and use
JPS572401A (en) Roller tapet and production thereof
IL63754A (en) Photoresponsive amorphous alloys having a graded band gap,their production and devices made therefrom
IL63755A (en) Photoresponsive amorphous alloys having increased band gap,their production and devices made therefrom
DE3165091D1 (en) Valienamine derivatives, their production and use
JPS56139653A (en) Amorphous alloy , production thereof and core using same
JPS57108147A (en) Product and production
JPS56166106A (en) Alkylphosphonite, its manufacture and bactericide
JPS5785944A (en) Ultra-conductive wire based on bronze- nb3sn and production thereof
DE3162556D1 (en) N-benzylphenylacetamide derivatives, their production and use
JPS5767563A (en) Novel indene derivative, manufacture and medicine
DE3361924D1 (en) Polypeptide-diesters, their production and use
JPS5777340A (en) Novel effect yarn and production thereof
IL63753A0 (en) Photoresponsive amorphous germanium alloys,their production and devices made therefrom
IL63571A0 (en) New metabolites,processes for their production and their use
JPS57111270A (en) Potassium-aluminum-phosphate composition, manufacture and product
EP0095192A3 (en) Tetrahydrophthalimides, and their production and use
JPS5766200A (en) Paper and production thereof
GB2019418B (en) Polymers and their production
DE3161206D1 (en) Oligo-isobutyl cyclohexane, process for its production and its use
IL57511A (en) 3-phenoxy-and 3-benzylbenzyl-ideneamines and their production
DE3165708D1 (en) N-substituted phenyl-1-methylcyclopropanecarboxamides, their production and use
JPS5782551A (en) Padding and production thereof
IL57512A0 (en) 3-phenoxy-and 3-benzylbenzlamines and their production