CA1192817A - Method for increasing the band gap in photoresponsive amorphous alloys and devices - Google Patents
Method for increasing the band gap in photoresponsive amorphous alloys and devicesInfo
- Publication number
- CA1192817A CA1192817A CA000385389A CA385389A CA1192817A CA 1192817 A CA1192817 A CA 1192817A CA 000385389 A CA000385389 A CA 000385389A CA 385389 A CA385389 A CA 385389A CA 1192817 A CA1192817 A CA 1192817A
- Authority
- CA
- Canada
- Prior art keywords
- alloy
- band gap
- layer
- deposited
- increasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
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Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US185,520 | 1980-09-09 | ||
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20647680A | 1980-11-13 | 1980-11-13 | |
US206,476 | 1980-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1192817A true CA1192817A (en) | 1985-09-03 |
Family
ID=26881209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000385389A Expired CA1192817A (en) | 1980-09-09 | 1981-09-08 | Method for increasing the band gap in photoresponsive amorphous alloys and devices |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890000479B1 (ko) |
AU (1) | AU541939B2 (ko) |
BR (1) | BR8105746A (ko) |
CA (1) | CA1192817A (ko) |
DE (1) | DE3135412C2 (ko) |
ES (1) | ES505269A0 (ko) |
FR (1) | FR2490019B1 (ko) |
GB (1) | GB2083704B (ko) |
IE (1) | IE52208B1 (ko) |
IL (1) | IL63755A (ko) |
IN (1) | IN157494B (ko) |
IT (1) | IT1138204B (ko) |
NL (1) | NL8104139A (ko) |
SE (1) | SE8105278L (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
FR2490018B1 (fr) * | 1980-09-09 | 1986-01-17 | Energy Conversion Devices Inc | Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus |
FR2490013B1 (fr) * | 1980-09-09 | 1985-11-08 | Energy Conversion Devices Inc | Dispositif amorphe photosensible a cellules multiples |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
JPS59111152A (ja) * | 1982-12-16 | 1984-06-27 | Sharp Corp | 電子写真用感光体 |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
US4572882A (en) * | 1983-09-09 | 1986-02-25 | Canon Kabushiki Kaisha | Photoconductive member containing amorphous silicon and germanium |
EP0151754B1 (en) * | 1984-02-14 | 1991-12-18 | Energy Conversion Devices, Inc. | An improved method of making a photoconductive member |
JPH0624238B2 (ja) * | 1985-04-16 | 1994-03-30 | キヤノン株式会社 | フォトセンサアレイの製造方法 |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
US4887134A (en) * | 1986-09-26 | 1989-12-12 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded |
US5155567A (en) * | 1990-01-17 | 1992-10-13 | Ricoh Company, Ltd. | Amorphous photoconductive material and photosensor employing the photoconductive material |
JP3099957B2 (ja) * | 1990-01-17 | 2000-10-16 | 株式会社リコー | 光導電部材 |
DE19524459A1 (de) * | 1995-07-07 | 1997-01-09 | Forschungszentrum Juelich Gmbh | Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten |
JP3119131B2 (ja) * | 1995-08-01 | 2000-12-18 | トヨタ自動車株式会社 | シリコン薄膜の製造方法及びこの方法を用いた太陽電池の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
GB2038086A (en) * | 1978-12-19 | 1980-07-16 | Standard Telephones Cables Ltd | Amorphous semiconductor devices |
-
1981
- 1981-09-07 IE IE2064/81A patent/IE52208B1/en not_active IP Right Cessation
- 1981-09-07 FR FR8116957A patent/FR2490019B1/fr not_active Expired
- 1981-09-07 DE DE3135412A patent/DE3135412C2/de not_active Expired
- 1981-09-07 IT IT23828/81A patent/IT1138204B/it active
- 1981-09-07 IL IL63755A patent/IL63755A/xx unknown
- 1981-09-07 KR KR1019810003329A patent/KR890000479B1/ko active
- 1981-09-07 NL NL8104139A patent/NL8104139A/nl not_active Application Discontinuation
- 1981-09-07 GB GB8126967A patent/GB2083704B/en not_active Expired
- 1981-09-07 SE SE8105278A patent/SE8105278L/xx not_active Application Discontinuation
- 1981-09-07 ES ES505269A patent/ES505269A0/es active Granted
- 1981-09-07 IN IN1004/CAL/81A patent/IN157494B/en unknown
- 1981-09-08 AU AU75020/81A patent/AU541939B2/en not_active Expired
- 1981-09-08 BR BR8105746A patent/BR8105746A/pt not_active IP Right Cessation
- 1981-09-08 CA CA000385389A patent/CA1192817A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IN157494B (ko) | 1986-04-12 |
GB2083704B (en) | 1985-08-21 |
IT8123828A0 (it) | 1981-09-07 |
DE3135412A1 (de) | 1982-08-12 |
FR2490019A1 (fr) | 1982-03-12 |
ES8302362A1 (es) | 1982-12-16 |
NL8104139A (nl) | 1982-04-01 |
IL63755A0 (en) | 1981-12-31 |
FR2490019B1 (fr) | 1985-10-31 |
KR890000479B1 (ko) | 1989-03-18 |
ES505269A0 (es) | 1982-12-16 |
KR830008407A (ko) | 1983-11-18 |
IE812064L (en) | 1982-03-09 |
BR8105746A (pt) | 1982-05-25 |
IL63755A (en) | 1984-07-31 |
SE8105278L (sv) | 1982-03-10 |
AU541939B2 (en) | 1985-01-31 |
GB2083704A (en) | 1982-03-24 |
DE3135412C2 (de) | 1985-11-21 |
IE52208B1 (en) | 1987-08-05 |
AU7502081A (en) | 1982-03-18 |
IT1138204B (it) | 1986-09-17 |
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