IL280370A - שיטה מטרולוגית, מטרה ומצע - Google Patents

שיטה מטרולוגית, מטרה ומצע

Info

Publication number
IL280370A
IL280370A IL280370A IL28037021A IL280370A IL 280370 A IL280370 A IL 280370A IL 280370 A IL280370 A IL 280370A IL 28037021 A IL28037021 A IL 28037021A IL 280370 A IL280370 A IL 280370A
Authority
IL
Israel
Prior art keywords
target
substrate
metrology method
metrology
Prior art date
Application number
IL280370A
Other languages
English (en)
Other versions
IL280370B1 (he
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Priority claimed from PCT/EP2015/069062 external-priority patent/WO2016030255A2/en
Publication of IL280370A publication Critical patent/IL280370A/he
Publication of IL280370B1 publication Critical patent/IL280370B1/he

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
IL280370A 2014-08-29 2015-08-19 שיטה מטרולוגית, מטרה ומצע IL280370B1 (he)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP14182962 2014-08-29
US201462090801P 2014-12-11 2014-12-11
US201562170008P 2015-06-02 2015-06-02
PCT/EP2015/069062 WO2016030255A2 (en) 2014-08-29 2015-08-19 Metrology method, target and substrate

Publications (2)

Publication Number Publication Date
IL280370A true IL280370A (he) 2021-03-01
IL280370B1 IL280370B1 (he) 2024-03-01

Family

ID=54065326

Family Applications (1)

Application Number Title Priority Date Filing Date
IL280370A IL280370B1 (he) 2014-08-29 2015-08-19 שיטה מטרולוגית, מטרה ומצע

Country Status (4)

Country Link
JP (1) JP6951495B2 (he)
KR (3) KR102230150B1 (he)
IL (1) IL280370B1 (he)
TW (1) TWI689792B (he)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
TWI715286B (zh) * 2019-11-13 2021-01-01 華邦電子股份有限公司 微影製程的關鍵尺寸的監控結構
CN111766764A (zh) * 2020-06-24 2020-10-13 上海华力集成电路制造有限公司 一种套刻精度量测标记及其使用方法
CN116679535B (zh) * 2023-08-04 2023-11-21 魅杰光电科技(上海)有限公司 套刻误差的量测方法、装置、系统及存储介质

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7629697B2 (en) * 2004-11-12 2009-12-08 Asml Netherlands B.V. Marker structure and method for controlling alignment of layers of a multi-layered substrate
US7898662B2 (en) 2006-06-20 2011-03-01 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP2008117909A (ja) 2006-11-02 2008-05-22 Sharp Corp 位置合せデータ算出方法および位置合せデータ算出装置、位置合せ方法および位置合せ装置と、露光方法および露光装置
US9709903B2 (en) 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US9454072B2 (en) 2012-11-09 2016-09-27 Kla-Tencor Corporation Method and system for providing a target design displaying high sensitivity to scanner focus change

Also Published As

Publication number Publication date
JP2020112827A (ja) 2020-07-27
KR20190064674A (ko) 2019-06-10
TW201923486A (zh) 2019-06-16
TWI689792B (zh) 2020-04-01
IL280370B1 (he) 2024-03-01
KR20210032009A (ko) 2021-03-23
KR102230150B1 (ko) 2021-03-23
KR102406393B1 (ko) 2022-06-08
KR102295507B1 (ko) 2021-09-01
JP6951495B2 (ja) 2021-10-20
KR20210110732A (ko) 2021-09-08

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