IL280370B1 - שיטה מטרולוגית, מטרה ומצע - Google Patents
שיטה מטרולוגית, מטרה ומצעInfo
- Publication number
- IL280370B1 IL280370B1 IL280370A IL28037021A IL280370B1 IL 280370 B1 IL280370 B1 IL 280370B1 IL 280370 A IL280370 A IL 280370A IL 28037021 A IL28037021 A IL 28037021A IL 280370 B1 IL280370 B1 IL 280370B1
- Authority
- IL
- Israel
- Prior art keywords
- target
- sub
- targets
- periodic structures
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 372
- 239000000758 substrate Substances 0.000 title claims description 211
- 230000000737 periodic effect Effects 0.000 claims description 762
- 238000005259 measurement Methods 0.000 claims description 251
- 230000008569 process Effects 0.000 claims description 174
- 238000013461 design Methods 0.000 claims description 166
- 230000005855 radiation Effects 0.000 claims description 113
- 238000005286 illumination Methods 0.000 claims description 59
- 238000004590 computer program Methods 0.000 claims description 23
- 230000010287 polarization Effects 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 396
- 239000011295 pitch Substances 0.000 description 67
- 238000000059 patterning Methods 0.000 description 60
- 230000000694 effects Effects 0.000 description 37
- 230000003287 optical effect Effects 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000004088 simulation Methods 0.000 description 18
- 230000011218 segmentation Effects 0.000 description 16
- 238000007689 inspection Methods 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000003909 pattern recognition Methods 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 230000002829 reductive effect Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000001459 lithography Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000002131 composite material Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- 210000001747 pupil Anatomy 0.000 description 9
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 238000011165 process development Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000003550 marker Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000035899 viability Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002447 crystallographic data Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001446 dark-field microscopy Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000000513 principal component analysis Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP14182962 | 2014-08-29 | ||
| US201462090801P | 2014-12-11 | 2014-12-11 | |
| US201562170008P | 2015-06-02 | 2015-06-02 | |
| PCT/EP2015/069062 WO2016030255A2 (en) | 2014-08-29 | 2015-08-19 | Metrology method, target and substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL280370A IL280370A (he) | 2021-03-01 |
| IL280370B1 true IL280370B1 (he) | 2024-03-01 |
Family
ID=54065326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL280370A IL280370B1 (he) | 2014-08-29 | 2015-08-19 | שיטה מטרולוגית, מטרה ומצע |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6951495B2 (he) |
| KR (3) | KR102406393B1 (he) |
| IL (1) | IL280370B1 (he) |
| TW (1) | TWI689792B (he) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11360397B2 (en) * | 2019-09-17 | 2022-06-14 | Kla Corporation | System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements |
| TWI715286B (zh) * | 2019-11-13 | 2021-01-01 | 華邦電子股份有限公司 | 微影製程的關鍵尺寸的監控結構 |
| CN111766764A (zh) * | 2020-06-24 | 2020-10-13 | 上海华力集成电路制造有限公司 | 一种套刻精度量测标记及其使用方法 |
| CN116679535B (zh) * | 2023-08-04 | 2023-11-21 | 魅杰光电科技(上海)有限公司 | 套刻误差的量测方法、装置、系统及存储介质 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060103033A1 (en) * | 2004-11-12 | 2006-05-18 | Asml Netherlands B.V. | Marker structure and method for controlling alignment of layers of a multi-layered substrate |
| US20080144036A1 (en) * | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
| US20130107259A1 (en) * | 2011-11-01 | 2013-05-02 | Kla-Tencor Corporation | Overlay target geometry for measuring multiple pitches |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7898662B2 (en) * | 2006-06-20 | 2011-03-01 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| JP2008117909A (ja) * | 2006-11-02 | 2008-05-22 | Sharp Corp | 位置合せデータ算出方法および位置合せデータ算出装置、位置合せ方法および位置合せ装置と、露光方法および露光装置 |
| US9454072B2 (en) * | 2012-11-09 | 2016-09-27 | Kla-Tencor Corporation | Method and system for providing a target design displaying high sensitivity to scanner focus change |
-
2015
- 2015-08-19 KR KR1020217026901A patent/KR102406393B1/ko active IP Right Grant
- 2015-08-19 KR KR1020217007540A patent/KR102295507B1/ko active IP Right Grant
- 2015-08-19 KR KR1020197015583A patent/KR102230150B1/ko active IP Right Grant
- 2015-08-19 IL IL280370A patent/IL280370B1/he unknown
- 2015-08-27 TW TW107140136A patent/TWI689792B/zh active
-
2020
- 2020-04-01 JP JP2020066321A patent/JP6951495B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060103033A1 (en) * | 2004-11-12 | 2006-05-18 | Asml Netherlands B.V. | Marker structure and method for controlling alignment of layers of a multi-layered substrate |
| US20080144036A1 (en) * | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
| US20130107259A1 (en) * | 2011-11-01 | 2013-05-02 | Kla-Tencor Corporation | Overlay target geometry for measuring multiple pitches |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210032009A (ko) | 2021-03-23 |
| KR20190064674A (ko) | 2019-06-10 |
| JP6951495B2 (ja) | 2021-10-20 |
| KR102406393B1 (ko) | 2022-06-08 |
| KR102230150B1 (ko) | 2021-03-23 |
| TW201923486A (zh) | 2019-06-16 |
| KR102295507B1 (ko) | 2021-09-01 |
| KR20210110732A (ko) | 2021-09-08 |
| JP2020112827A (ja) | 2020-07-27 |
| TWI689792B (zh) | 2020-04-01 |
| IL280370A (he) | 2021-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11428521B2 (en) | Metrology method, target and substrate | |
| US10698322B2 (en) | Metrology method, computer product and system | |
| US10254658B2 (en) | Metrology method, target and substrate | |
| WO2017108411A1 (en) | Metrology method and apparatus | |
| JP6951495B2 (ja) | メトロロジー方法、ターゲット、及び基板 |