IL272051B2 - Electron beam apparatus with high resolutions - Google Patents

Electron beam apparatus with high resolutions

Info

Publication number
IL272051B2
IL272051B2 IL272051A IL27205120A IL272051B2 IL 272051 B2 IL272051 B2 IL 272051B2 IL 272051 A IL272051 A IL 272051A IL 27205120 A IL27205120 A IL 27205120A IL 272051 B2 IL272051 B2 IL 272051B2
Authority
IL
Israel
Prior art keywords
lens
electrostatic
electron
electron beam
source
Prior art date
Application number
IL272051A
Other languages
English (en)
Hebrew (he)
Other versions
IL272051B1 (en
IL272051A (en
Original Assignee
Kla Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Corp filed Critical Kla Corp
Publication of IL272051A publication Critical patent/IL272051A/en
Publication of IL272051B1 publication Critical patent/IL272051B1/en
Publication of IL272051B2 publication Critical patent/IL272051B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/067—Replacing parts of guns; Mutual adjustment of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/075—Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/065—Source emittance characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/1415—Bores or yokes, i.e. magnetic circuit in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
IL272051A 2017-08-02 2018-07-24 Electron beam apparatus with high resolutions IL272051B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/666,666 US10096447B1 (en) 2017-08-02 2017-08-02 Electron beam apparatus with high resolutions
PCT/US2018/043353 WO2019027714A1 (en) 2017-08-02 2018-07-24 HIGH RESOLUTION ELECTRON BEAM APPARATUS

Publications (3)

Publication Number Publication Date
IL272051A IL272051A (en) 2020-03-31
IL272051B1 IL272051B1 (en) 2025-04-01
IL272051B2 true IL272051B2 (en) 2025-08-01

Family

ID=63685156

Family Applications (1)

Application Number Title Priority Date Filing Date
IL272051A IL272051B2 (en) 2017-08-02 2018-07-24 Electron beam apparatus with high resolutions

Country Status (9)

Country Link
US (1) US10096447B1 (https=)
EP (1) EP3662326A4 (https=)
JP (1) JP7116154B2 (https=)
KR (1) KR102363263B1 (https=)
CN (1) CN111051985B (https=)
IL (1) IL272051B2 (https=)
SG (1) SG11202000608VA (https=)
TW (1) TWI751362B (https=)
WO (1) WO2019027714A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12165838B2 (en) * 2018-12-14 2024-12-10 Kla Corporation Joint electron-optical columns for flood-charging and image-forming in voltage contrast wafer inspections
US11830699B2 (en) * 2021-07-06 2023-11-28 Kla Corporation Cold-field-emitter electron gun with self-cleaning extractor using reversed e-beam current
US12165831B2 (en) 2022-05-31 2024-12-10 Kla Corporation Method and system of image-forming multi-electron beams
US11664186B1 (en) * 2022-08-07 2023-05-30 Borries Pte. Ltd. Apparatus of electron beam comprising pinnacle limiting plate and method of reducing electron-electron interaction
WO2025203155A1 (ja) * 2024-03-25 2025-10-02 中和科学株式会社 荷電粒子源制御装置
CN120413392A (zh) * 2025-04-27 2025-08-01 电子科技大学 一种用于回旋波保护器的新型电子枪

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060175548A1 (en) * 2005-02-04 2006-08-10 Takeshi Kawasaki Charged particle beam apparatus
US7821187B1 (en) * 2007-09-07 2010-10-26 Kla-Tencor Corporation Immersion gun equipped electron beam column

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4426583A (en) * 1982-05-10 1984-01-17 International Business Machines Corporation Electron beam potential switching apparatus
GB8401578D0 (en) 1984-01-19 1984-02-22 Cleaver J R A Ion and electron beam electrostatic and magnetic lens systems
US5493116A (en) * 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
EP0821393B1 (en) * 1996-07-25 1999-06-16 ACT Advanced Circuit Testing Gesellschaft für Testsystementwicklung mbH Detector objective lens
US6664546B1 (en) 2000-02-10 2003-12-16 Kla-Tencor In-situ probe for optimizing electron beam inspection and metrology based on surface potential
US6977375B2 (en) 2000-02-19 2005-12-20 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
EP1296351A4 (en) 2000-06-27 2009-09-23 Ebara Corp INVESTIGATION DEVICE FOR LOADED PARTICLE RAYS AND METHOD FOR PRODUCING A COMPONENT ELEVATED WITH THIS INSPECTION DEVICE
EP1271604A4 (en) 2001-01-10 2005-05-25 Ebara Corp APPARATUS AND METHOD FOR INSPECTING ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD COMPRISING THE INSPECTION APPARATUS
US6897442B2 (en) 2003-04-25 2005-05-24 Applied Materials Israel, Ltd. Objective lens arrangement for use in a charged particle beam column
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
JP4751635B2 (ja) * 2005-04-13 2011-08-17 株式会社日立ハイテクノロジーズ 磁界重畳型電子銃
EP1947674B1 (en) * 2005-11-08 2015-06-17 Advantest Corporation Electron gun, electron beam exposure system and exposure method
JP4616180B2 (ja) * 2006-01-20 2011-01-19 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
US7825386B2 (en) 2006-10-25 2010-11-02 Hermes-Microvision, Inc. System and method for a charged particle beam
DE112007000045T5 (de) * 2007-02-20 2010-04-22 Advantest Corporation Elektronenkanone, Elektronenstrahl-Bestrahlungsgerät und Bestrahlungsverfahren
KR101118698B1 (ko) * 2007-05-29 2012-03-12 전자빔기술센터 주식회사 시엔티 팁을 이용한 전자 칼럼 및 시엔티 팁을 정렬하는방법
KR100962243B1 (ko) * 2008-06-09 2010-06-11 한국기계연구원 포컬 렌스를 활용한 전자빔 전류 제어 장치 및 방법
WO2010070837A1 (ja) * 2008-12-16 2010-06-24 株式会社日立ハイテクノロジーズ 電子線装置およびそれを用いた電子線応用装置
WO2010132265A2 (en) * 2009-05-12 2010-11-18 Carl Zeiss Nts, Llc. Gas delivery in a microscope system
JP5063715B2 (ja) * 2010-02-04 2012-10-31 株式会社日立ハイテクノロジーズ 電子源，電子銃、それを用いた電子顕微鏡装置及び電子線描画装置
EP2492950B1 (en) * 2011-02-25 2018-04-11 FEI Company Method for rapid switching between a high current mode and a low current mode in a charged particle beam system
US8664594B1 (en) 2011-04-18 2014-03-04 Kla-Tencor Corporation Electron-optical system for high-speed and high-sensitivity inspections
TWI472751B (zh) * 2011-05-03 2015-02-11 Hermes Microvision Inc 用於檢查與複檢光罩/晶圓缺陷的帶電粒子系統
US8455838B2 (en) 2011-06-29 2013-06-04 Kla-Tencor Corporation Multiple-column electron beam apparatus and methods
JP5687157B2 (ja) * 2011-08-22 2015-03-18 株式会社日立ハイテクノロジーズ 電子銃、電界放出電子銃、荷電粒子線装置および透過型電子顕微鏡
US9053900B2 (en) * 2012-04-03 2015-06-09 Kla-Tencor Corporation Apparatus and methods for high-resolution electron beam imaging
US8859982B2 (en) 2012-09-14 2014-10-14 Kla-Tencor Corporation Dual-lens-gun electron beam apparatus and methods for high-resolution imaging with both high and low beam currents
EP2779201A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High brightness electron gun, system using the same, and method of operating the same
EP2779204A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron gun arrangement
EP2801997B1 (en) 2013-05-06 2016-03-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam wafer inspection system and method for operation thereof
US9105440B2 (en) 2013-08-30 2015-08-11 Hermes Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lens
US10056228B2 (en) * 2014-07-29 2018-08-21 Applied Materials Israel Ltd. Charged particle beam specimen inspection system and method for operation thereof
US9437395B2 (en) 2014-12-09 2016-09-06 Hermes Microvision Inc. Method and compound system for inspecting and reviewing defects
US9595417B2 (en) 2014-12-22 2017-03-14 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High resolution charged particle beam device and method of operating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060175548A1 (en) * 2005-02-04 2006-08-10 Takeshi Kawasaki Charged particle beam apparatus
US7821187B1 (en) * 2007-09-07 2010-10-26 Kla-Tencor Corporation Immersion gun equipped electron beam column

Also Published As

Publication number Publication date
CN111051985A (zh) 2020-04-21
IL272051B1 (en) 2025-04-01
KR20200027042A (ko) 2020-03-11
KR102363263B1 (ko) 2022-02-14
US10096447B1 (en) 2018-10-09
TWI751362B (zh) 2022-01-01
JP2020529702A (ja) 2020-10-08
EP3662326A1 (en) 2020-06-10
WO2019027714A1 (en) 2019-02-07
CN111051985B (zh) 2022-05-03
JP7116154B2 (ja) 2022-08-09
EP3662326A4 (en) 2021-07-07
TW201919086A (zh) 2019-05-16
IL272051A (en) 2020-03-31
SG11202000608VA (en) 2020-02-27

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