IL217196A - גילוי אות ברמה נמוכה באמצעות הגברת מפולת של מוליכים למחצה - Google Patents
גילוי אות ברמה נמוכה באמצעות הגברת מפולת של מוליכים למחצהInfo
- Publication number
- IL217196A IL217196A IL217196A IL21719611A IL217196A IL 217196 A IL217196 A IL 217196A IL 217196 A IL217196 A IL 217196A IL 21719611 A IL21719611 A IL 21719611A IL 217196 A IL217196 A IL 217196A
- Authority
- IL
- Israel
- Prior art keywords
- low
- level signal
- signal detection
- avalanche amplification
- semiconductor avalanche
- Prior art date
Links
- 230000003321 amplification Effects 0.000 title 1
- 238000001514 detection method Methods 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22070909P | 2009-06-26 | 2009-06-26 | |
PCT/US2010/040241 WO2010151888A1 (en) | 2009-06-26 | 2010-06-28 | Low-level signal detection by semiconductor avalanche amplification |
Publications (2)
Publication Number | Publication Date |
---|---|
IL217196A0 IL217196A0 (en) | 2012-02-29 |
IL217196A true IL217196A (he) | 2017-04-30 |
Family
ID=42790817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL217196A IL217196A (he) | 2009-06-26 | 2011-12-25 | גילוי אות ברמה נמוכה באמצעות הגברת מפולת של מוליכים למחצה |
Country Status (5)
Country | Link |
---|---|
US (1) | US8441032B2 (he) |
EP (1) | EP2446483B1 (he) |
JP (1) | JP2012531753A (he) |
IL (1) | IL217196A (he) |
WO (1) | WO2010151888A1 (he) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2778045C1 (ru) * | 2021-11-22 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ стабилизации лавинного режима фотодиода |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110095192A1 (en) * | 2009-10-26 | 2011-04-28 | Johnson Kurtis F | Method to increase dynamic range of segmented non-linear devices |
US8866951B2 (en) * | 2011-08-24 | 2014-10-21 | Aptina Imaging Corporation | Super-resolution imaging systems |
JP5992867B2 (ja) * | 2013-05-24 | 2016-09-14 | 日本電信電話株式会社 | アバランシェフォトダイオード |
FR3037442B1 (fr) * | 2015-06-11 | 2018-07-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photodiode spad couverte d'un reseau |
CN105720130B (zh) * | 2015-07-10 | 2018-01-30 | 中国科学院物理研究所 | 基于量子阱带间跃迁的光电探测器 |
US10381502B2 (en) * | 2015-09-09 | 2019-08-13 | Teledyne Scientific & Imaging, Llc | Multicolor imaging device using avalanche photodiode |
CN105405917A (zh) * | 2015-11-03 | 2016-03-16 | 中国科学院半导体研究所 | 台面型雪崩光电探测器 |
KR101783648B1 (ko) | 2015-12-17 | 2017-10-10 | (재)한국나노기술원 | 저 암전류 아발란치 포토다이오드 |
KR101927236B1 (ko) | 2017-11-28 | 2018-12-10 | 주식회사 시지트로닉스 | 고감도 애벌런치 광 다이오드 및 그 제조방법 |
WO2019146725A1 (ja) | 2018-01-26 | 2019-08-01 | 浜松ホトニクス株式会社 | 光検出装置 |
WO2019239962A1 (ja) * | 2018-06-14 | 2019-12-19 | 国立研究開発法人産業技術総合研究所 | 受光素子、撮像素子及び撮像装置 |
WO2020010590A1 (en) * | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | Image sensors with silver-nanoparticle electrodes |
CN111668324A (zh) * | 2019-03-07 | 2020-09-15 | 苏州旭创科技有限公司 | 一种集成光栅反射结构的光探测器 |
CN110148648B (zh) * | 2019-05-17 | 2021-05-11 | 东南大学 | 一种具有双掺杂Al组分渐变分离层的紫外探测器 |
KR102284627B1 (ko) * | 2019-12-04 | 2021-08-02 | 주식회사 시지트로닉스 | 수광반도체 소자 및 그 제조방법 |
US11056604B1 (en) * | 2020-02-18 | 2021-07-06 | National Central University | Photodiode of avalanche breakdown having mixed composite charge layer |
US11251219B2 (en) | 2020-03-10 | 2022-02-15 | Sensors Unlimited, Inc. | Low capacitance photo detectors |
CN113964214A (zh) * | 2021-11-25 | 2022-01-21 | 中国电子科技集团公司第四十四研究所 | 一种微黑体硅apd光电探测器及其制作方法 |
CN115579410A (zh) * | 2022-12-07 | 2023-01-06 | 江苏华兴激光科技有限公司 | 一种红外拓展波长光探测器芯片外延片 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5880490A (en) * | 1997-07-28 | 1999-03-09 | Board Of Regents, The University Of Texas System | Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation |
US6943051B2 (en) * | 2000-10-19 | 2005-09-13 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes integrated with CMOS |
US6885827B2 (en) * | 2002-07-30 | 2005-04-26 | Amplification Technologies, Inc. | High sensitivity, high resolution detection of signals |
WO2004027879A2 (en) * | 2002-09-19 | 2004-04-01 | Quantum Semiconductor Llc | Light-sensing device |
WO2005048319A2 (en) * | 2003-11-06 | 2005-05-26 | Yale University | Large-area detector |
-
2010
- 2010-06-28 WO PCT/US2010/040241 patent/WO2010151888A1/en active Application Filing
- 2010-06-28 JP JP2012517830A patent/JP2012531753A/ja active Pending
- 2010-06-28 EP EP10728107.3A patent/EP2446483B1/en not_active Not-in-force
- 2010-06-28 US US12/825,255 patent/US8441032B2/en not_active Expired - Fee Related
-
2011
- 2011-12-25 IL IL217196A patent/IL217196A/he not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2778045C1 (ru) * | 2021-11-22 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ стабилизации лавинного режима фотодиода |
Also Published As
Publication number | Publication date |
---|---|
US8441032B2 (en) | 2013-05-14 |
US20110018086A1 (en) | 2011-01-27 |
JP2012531753A (ja) | 2012-12-10 |
EP2446483A1 (en) | 2012-05-02 |
WO2010151888A1 (en) | 2010-12-29 |
IL217196A0 (en) | 2012-02-29 |
EP2446483B1 (en) | 2018-02-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
MM9K | Patent not in force due to non-payment of renewal fees |