CN115579410A - 一种红外拓展波长光探测器芯片外延片 - Google Patents

一种红外拓展波长光探测器芯片外延片 Download PDF

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CN115579410A
CN115579410A CN202211560340.0A CN202211560340A CN115579410A CN 115579410 A CN115579410 A CN 115579410A CN 202211560340 A CN202211560340 A CN 202211560340A CN 115579410 A CN115579410 A CN 115579410A
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徐鹏飞
王岩
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Jiangsu Huaxing Laser Technology Co ltd
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    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Abstract

本发明公开了一种红外拓展波长光探测器芯片外延片，涉及半导体光电子器件技术领域，公开了包括衬底为InP衬底层，InP衬底层上方设置有InP缓冲层，InP缓冲层上方设置有InAlAs缓冲层，InAlAs缓冲层上方设置有InAlAs倍增层，InAlAs倍增层上方设置有InAlAs电荷层，InAlAs电荷层上方设置有应变InGaAs吸收层，应变InGaAs吸收层上方设置有InP盖层，本发明在传统的InGaAs红外雪崩探测器基础上将无应变InGaAs吸收层设计成应变InGaAs吸收层，使传统InGaAs红外雪崩探测器的波长响应范围往长波段拓展，且具有内部增益，从而提高气体探测的灵敏度。

Description

一种红外拓展波长光探测器芯片外延片
技术领域
本发明涉及半导体光电子器件技术领域，更具体地说，它涉及一种红外拓展波长光探测器芯片外延片。
背景技术
随着环境问题及能源开采问题越来越被重视，对于这两个问题的监测也越来越重要，甲烷是一种能够反映自然环境变化如温室效应的指标性气体，另外在工业领域如地下矿井中含有大量甲烷，对于甲烷的监测能够有效的避免灾情发生。甲烷的红外吸收特征峰处于红外波段（1654nm），通常使用红外拓展波长光探测芯片对此峰位进行监测来达到检测甲烷含量的目的。传统的红外拓展波长光探测芯片为PIN光电二极管结构，然而这种结构的探测芯片没有内部增益，因此响应度有限，对于低含量的气体信号灵敏度不够。
发明内容
针对现有技术存在的不足，本发明提供了一种红外拓展波长光探测器芯片外延片，基于该外延片的芯片能够具有内部增益，能够大大提高对于气体探测的灵敏度。
为实现上述目的，本发明提供了如下技术方案：
一种红外拓展波长光探测器芯片外延片，包括衬底为InP衬底层；
所述InP衬底层上方设置有InP缓冲层；
所述InP缓冲层上方设置有InAlAs缓冲层；
所述InAlAs缓冲层上方设置有InAlAs倍增层；
所述InAlAs倍增层上方设置有InAlAs电荷层；
所述InAlAs电荷层上方设置有应变InGaAs吸收层；
所述应变InGaAs吸收层上方设置有InP盖层。
进一步的，所述InP衬底层为半绝缘型，所述InP衬底层为掺杂铁衬底。
进一步的，所述InP衬底层为N型，所述InP衬底层掺杂浓度为大于1x1018cm-3，所述InP衬底层厚度为100-400微米。
进一步的，所述InP缓冲层掺杂浓度大于1x1018cm-3，所述InP缓冲层厚度大于0.2微米。
进一步的，所述InAlAs缓冲层掺杂浓度大于1x1018cm-3，所述InAlAs缓冲层厚度大于0.1微米。
进一步的，所述InAlAs倍增层掺杂浓度小于1x1015cm-3，所述InAlAs倍增层厚度为0.1-0.5微米。
进一步的，所述InAlAs电荷层掺杂浓度大于1x1017cm-3，所述InAlAs电荷层厚度0.1-0.5微米。
进一步的，所述应变InGaAs吸收层掺杂浓度小于1x1015cm-3，所述应变InGaAs吸收层厚度大于0.5-5微米，所述应变InGaAs吸收层应变小于1000ppm。
进一步的，所述InP盖层掺杂浓度小于1x1015cm-3，所述InP盖层厚度大于0.5微米。
与现有技术相比，本发明具备以下有益效果：
本发明主要针对1600-1700 nm波段气体特征峰探测，在传统的InGaAs红外雪崩探测器基础上将无应变InGaAs吸收层设计成应变InGaAs吸收层，使传统InGaAs红外雪崩探测器的波长响应范围往长波段拓展，且具有内部增益，从而提高气体探测的灵敏度。
附图说明
图1为一种红外拓展波长光探测器芯片外延片的结构示意图。
10、InP衬底层；20、InP缓冲层；30、InAlAs缓冲层；40、InAlAs倍增层；50、InAlAs电荷层；60、应变InGaAs吸收层；70、InP盖层。
具体实施方式
参照图1
一种红外拓展波长光探测器芯片外延片，包括衬底为InP衬底层10；
InP衬底层10上方设置有InP缓冲层20；
InP缓冲层20上方设置有InAlAs缓冲层30；
InAlAs缓冲层30上方设置有InAlAs倍增层40；
InAlAs倍增层40上方设置有InAlAs电荷层50；
InAlAs电荷层50上方设置有应变InGaAs吸收层60；
应变InGaAs吸收层60上方设置有InP盖层70。
InP衬底层10为半绝缘型，InP衬底层10为掺杂铁衬底。InP衬底层10为N型，InP衬底层10掺杂浓度为大于1x1018cm-3，InP衬底层10厚度为100-400微米。
InP缓冲层20掺杂浓度大于1x1018cm-3，InP缓冲层20厚度大于0.2微米。
InAlAs缓冲层30掺杂浓度大于1x1018cm-3，InAlAs缓冲层30厚度大于0.1微米。
InAlAs倍增层40掺杂浓度小于1x1015cm-3，InAlAs倍增层40厚度为0.1-0.5微米。
InAlAs电荷层50掺杂浓度大于1x1017cm-3，InAlAs电荷层50厚度0.1-0.5微米。
应变InGaAs吸收层60掺杂浓度小于1x1015cm-3，应变InGaAs吸收层60厚度大于0.5-5微米，应变InGaAs吸收层60应变小于1000ppm。
InP盖层70掺杂浓度小于1x1015cm-3，InP盖层70厚度大于0.5微米。
表1
Figure 134869DEST_PATH_IMAGE002
以上所述仅是本发明的优选实施方式，本发明的保护范围并不仅局限于上述实施例，凡属于本发明思路下的技术方案均属于本发明的保护范围。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理前提下的若干改进和润饰，这些改进和润饰也应视为本模板的保护范围。

Claims (9)

1.一种红外拓展波长光探测器芯片外延片，其特征在于，包括衬底为InP衬底层（10）；
所述InP衬底层（10）上方设置有InP缓冲层（20）；
所述InP缓冲层（20）上方设置有InAlAs缓冲层（30）；
所述InAlAs缓冲层（30）上方设置有InAlAs倍增层（40）；
所述InAlAs倍增层（40）上方设置有InAlAs电荷层（50）；
所述InAlAs电荷层（50）上方设置有应变InGaAs吸收层（60）；
所述应变InGaAs吸收层（60）上方设置有InP盖层（70）。
2.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InP衬底层（10）为半绝缘型，所述InP衬底层（10）为掺杂铁衬底。
3.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InP衬底层（10）为N型，所述InP衬底层（10）掺杂浓度为大于1x1018cm-3，所述InP衬底层（10）厚度为100-400微米。
4.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InP缓冲层（20）掺杂浓度大于1x1018cm-3，所述InP缓冲层（20）厚度大于0.2微米。
5.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InAlAs缓冲层（30）掺杂浓度大于1x1018cm-3，所述InAlAs缓冲层（30）厚度大于0.1微米。
6.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InAlAs倍增层（40）掺杂浓度小于1x1015cm-3，所述InAlAs倍增层（40）厚度为0.1-0.5微米。
7.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InAlAs电荷层（50）掺杂浓度大于1x1017cm-3，所述InAlAs电荷层（50）厚度0.1-0.5微米。
8.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述应变InGaAs吸收层（60）掺杂浓度小于1x1015cm-3，所述应变InGaAs吸收层（60）厚度大于0.5-5微米，所述应变InGaAs吸收层（60）应变小于1000ppm。
9.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片，其特征在于，所述InP盖层（70）掺杂浓度小于1x1015cm-3，所述InP盖层（70）厚度大于0.5微米。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116565043A (zh) * 2023-07-07 2023-08-08 江苏华兴激光科技有限公司 一种红外拓展波长光探测器芯片外延片结构

Citations (3)

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Publication number Priority date Publication date Assignee Title
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CN110071194A (zh) * 2019-04-09 2019-07-30 重庆邮电大学 一种宽光谱响应的InGaAs单光子雪崩光电二极管及其制造方法
CN111276555A (zh) * 2019-11-04 2020-06-12 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 基于InGaAs/InAlAs/InP雪崩光电探测器的结构优化方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20110018086A1 (en) * 2009-06-26 2011-01-27 Krishna Linga Low-level signal detection by semiconductor avalanche amplification
CN110071194A (zh) * 2019-04-09 2019-07-30 重庆邮电大学 一种宽光谱响应的InGaAs单光子雪崩光电二极管及其制造方法
CN111276555A (zh) * 2019-11-04 2020-06-12 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 基于InGaAs/InAlAs/InP雪崩光电探测器的结构优化方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116565043A (zh) * 2023-07-07 2023-08-08 江苏华兴激光科技有限公司 一种红外拓展波长光探测器芯片外延片结构

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