CN116565043A - 一种红外拓展波长光探测器芯片外延片结构 - Google Patents

一种红外拓展波长光探测器芯片外延片结构 Download PDF

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CN116565043A
CN116565043A CN202310825749.9A CN202310825749A CN116565043A CN 116565043 A CN116565043 A CN 116565043A CN 202310825749 A CN202310825749 A CN 202310825749A CN 116565043 A CN116565043 A CN 116565043A
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王岩
徐鹏飞
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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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Abstract

本发明公开了一种红外拓展波长光探测器芯片外延片结构，属于半导体光电子器件技术领域；本发明包括InP衬底层、InP缓冲层、InGaAs吸收层、InGaAsP过渡层、InP电荷层和InP盖层；本发明主要针对1650‑1700 nm波段气体特征峰的探测，在传统的红外雪崩探测器基础上将无应变InGaAs吸收层设计成应变InGaAs吸收层，使传统红外雪崩探测器的波长响应范围往长波段拓展，且具有内部增益，从而提高气体探测的灵敏度。

Description

一种红外拓展波长光探测器芯片外延片结构
技术领域
本发明涉及半导体光电子器件技术领域，更具体地说，它涉及一种红外拓展波长光探测器芯片外延片结构。
背景技术
环境问题及能源开采问题日趋严重，因此对于这两个问题有效的监测也越来越重要，甲烷是一种能够反映自然环境变化如温室效应的指标性气体，另外在工业领域如地下矿井中含有大量甲烷，对于甲烷的监测能够有效的避免灾情发生。甲烷的红外吸收特征峰处于红外波段（1654nm），通常使用红外拓展波长光探测芯片对此峰位波长的响应可达到检测甲烷含量的目的。传统的红外拓展波长光探测芯片为PIN光电二极管结构，然而这种结构的探测芯片没有内部增益，因此响应度有限，对于低含量的气体信号灵敏度不够。
发明内容
针对现有技术存在的不足，本发明的目的在于提供一种红外拓展波长光探测器芯片外延片结构，基于该外延片结构的芯片能够具有内部增益，可提高对于气体探测的灵敏度。
本发明的目的可以通过以下技术方案实现：
一种红外拓展波长光探测器芯片外延片结构，包括InP衬底层；
所述InP衬底层顶部设置有InP缓冲层；
所述InP缓冲层顶部设置有应变InGaAs吸收层；
所述应变InGaAs吸收层顶部设置有InGaAsP过渡层；
所述InGaAsP过渡层顶部设置有InP电荷层；
所述InP电荷层顶部设置有InP盖层。
作为本发明进一步的方案，所述InP衬底层为半绝缘或者N型，半绝缘为掺杂铁衬底，n掺杂浓度为大于1x1018cm-3，厚度为100-400微米。
作为本发明进一步的方案，所述InP缓冲层，掺杂浓度1x1017-1x1018cm-3，厚度大于0.2微米。
作为本发明进一步的方案，所述应变InGaAs吸收层，掺杂浓度小于1x1015cm-3，厚度0.5-5微米，应变小于1000ppm。
作为本发明进一步的方案，所述InGaAsP过渡层，波长由下往上从1.5um到1.1um渐变，掺杂浓度小于1x1015cm-3，厚度为0.03-0.09微米。
作为本发明进一步的方案，所述InP电荷层，掺杂浓度大于1x1017cm-3，厚度0.1-0.5微米。
作为本发明进一步的方案，所述InP盖层，掺杂浓度小于1x1016cm-3，厚度2-5微米。
与现有方案相比，本发明的有益效果：
本发明主要针对1650-1700 nm波段气体特征峰的探测，在传统的红外雪崩探测器基础上将无应变InGaAs吸收层设计成应变InGaAs吸收层，使传统红外雪崩探测器的波长响应范围往长波段拓展，且具有内部增益，从而提高气体探测的灵敏度。
附图说明
图1为本发明一种红外拓展波长光探测器芯片外延片结构的结构示意图。
图中：10、InP衬底层；20、InP缓冲层；30、应变InGaAs吸收层；40、InGaAsP过渡层；50、InP电荷层；60、InP盖层。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细的说明。本发明的实施例是为了示例和描述起见而给出的，而并不是无遗漏的或者将本发明限于所公开的形式。很多修改和变化对于本领域的普通技术人员而言是显而易见的。选择和描述实施例是为了更好说明本发明的原理和实际应用，并且使本领域的普通技术人员能够理解本发明从而设计适于特定用途的带有各种修改的各种实施例。
实施例1
参照图1所示，本发明为一种红外拓展波长光探测器芯片外延片结构，包括InP衬底层10，InP衬底层10顶部设置有InP缓冲层20；InP缓冲层20顶部设置有应变InGaAs吸收层30；应变InGaAs吸收层30顶部设置有InGaAsP过渡层40；InGaAsP过渡层40顶部设置有InP电荷层50；InP电荷层50顶部设置有InP盖层60；
传统的红外拓展波长光探测芯片为PIN光电二极管结构，然而这种结构的探测芯片没有内部增益，因此响应度有限，对于低含量的气体信号灵敏度不够；本发明主要针对1650-1700 nm波段气体特征峰的探测，在传统的红外雪崩探测器基础上将无应变InGaAs吸收层设计成应变InGaAs吸收层30，使传统红外雪崩探测器的波长响应范围往长波段拓展，且具有内部增益，从而提高气体探测的灵敏度。
参阅表一，表一为一种红外拓展波长光探测器芯片外延片结构的具体参数。
表一
具体的，InP衬底层10为半绝缘或者N型，半绝缘为掺杂铁衬底，半绝缘或n浓度为大于1x1018cm-3，厚度为100-400微米。
具体的，InP缓冲层20，掺杂浓度1x1017-1x1018cm-3，厚度大于0.2微米，应变小于200ppm。
具体的，应变InGaAs吸收层30，掺杂浓度小于1x1015cm-3，厚度0.5-5微米，应变小于1000ppm。
具体的，InGaAsP过渡层40，波长由下往上从1.5um到1.1um渐变，掺杂浓度小于1x1015cm-3，厚度为0.03-0.09微米，应变小于200ppm。
具体的，InP电荷层50，掺杂浓度大于1x1017cm-3，厚度0.1-0.5微米，应变小于200ppm。
具体的，InP盖层60，掺杂浓度小于1x1016cm-3，厚度2-5微米，应变小于200ppm。
以上对本发明的一个实施例进行了详细说明，但所述内容仅为本发明的较佳实施例，不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等，均应仍归属于本发明的专利涵盖范围之内。

Claims (6)

1.一种红外拓展波长光探测器芯片外延片结构，其特征在于，包括InP衬底层（10）；
所述InP衬底层（10）顶部设置有InP缓冲层（20）；
所述InP缓冲层（20）顶部设置有应变InGaAs吸收层（30）；
所述应变InGaAs吸收层（30），掺杂浓度小于1x1015cm-3，厚度0.5-5微米，应变小于1000ppm；
所述应变InGaAs吸收层（30）顶部设置有InGaAsP过渡层（40）；
所述InGaAsP过渡层（40）顶部设置有InP电荷层（50）；
所述InP电荷层（50）顶部设置有InP盖层（60）。
2.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片结构，其特征在于，所述InP衬底层（10）为半绝缘或者N型，半绝缘为掺杂铁衬底，n掺杂浓度为大于1x1018 cm-3，厚度为100-400微米。
3.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片结构，其特征在于，所述InP缓冲层（20），掺杂浓度1x1017-1x1018cm-3，厚度大于0.2微米。
4.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片结构，其特征在于，所述InGaAsP过渡层（40），波长由下往上从1.5um到1.1um渐变，掺杂浓度小于1x1015cm-3，厚度为0.03-0.09微米。
5.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片结构，其特征在于，所述InP电荷层（50），掺杂浓度大于1x1017cm-3，厚度0.1-0.5微米。
6.根据权利要求1所述的一种红外拓展波长光探测器芯片外延片结构，其特征在于，所述InP盖层（60），掺杂浓度小于1x1016cm-3，厚度2-5微米。
CN202310825749.9A 2023-07-07 2023-07-07 一种红外拓展波长光探测器芯片外延片结构 Pending CN116565043A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110047967A (zh) * 2019-03-29 2019-07-23 中国科学院上海技术物理研究所 一种宽谱InGaAs雪崩焦平面探测器及其制造方法
CN110634969A (zh) * 2019-10-30 2019-12-31 南昌鼎创光电科技有限责任公司 一种基于铟镓砷的波长拓展型红外探测器的外延片结构及其制备方法
CN115579410A (zh) * 2022-12-07 2023-01-06 江苏华兴激光科技有限公司 一种红外拓展波长光探测器芯片外延片
CN116053336A (zh) * 2022-12-27 2023-05-02 西南技术物理研究所 铟镓砷雪崩探测器表面陷光结构制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110047967A (zh) * 2019-03-29 2019-07-23 中国科学院上海技术物理研究所 一种宽谱InGaAs雪崩焦平面探测器及其制造方法
CN110634969A (zh) * 2019-10-30 2019-12-31 南昌鼎创光电科技有限责任公司 一种基于铟镓砷的波长拓展型红外探测器的外延片结构及其制备方法
CN115579410A (zh) * 2022-12-07 2023-01-06 江苏华兴激光科技有限公司 一种红外拓展波长光探测器芯片外延片
CN116053336A (zh) * 2022-12-27 2023-05-02 西南技术物理研究所 铟镓砷雪崩探测器表面陷光结构制备方法

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Application publication date: 20230808