CN110148648B - 一种具有双掺杂Al组分渐变分离层的紫外探测器 - Google Patents

一种具有双掺杂Al组分渐变分离层的紫外探测器 Download PDF

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CN110148648B
CN110148648B CN201910414019.3A CN201910414019A CN110148648B CN 110148648 B CN110148648 B CN 110148648B CN 201910414019 A CN201910414019 A CN 201910414019A CN 110148648 B CN110148648 B CN 110148648B
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张�雄
陆亮
崔一平
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Abstract

本发明涉及一种具有双掺杂Al组分渐变分离层的紫外探测器，包括由下至上依次设置的衬底、AlN中间层、非掺杂i‑Alx1Ga1‑x1N缓冲层、n型n‑Alx2Ga1‑x2N层、非掺杂i‑Alx3Ga1‑x3N吸收层、双掺杂Al组分渐变p‑Alx4Ga1‑x4N/i‑Alx5Ga1‑x5N/n‑Alx6Ga1‑x6N分离层、非掺杂i‑Alx7Ga1‑x7N倍增层、p型p‑Alx8Ga1‑x8N层以及p型GaN层；在n型n‑Alx1Ga1‑x1N层上引出n型欧姆电极，在p型GaN层上引出p型欧姆电极，其中x1>x2=x3=x4>x5>x6=x7>x8，通过对分离层两端的Al组分渐变区域分别进行p型掺杂和n型掺杂，可利用组分渐变伴随的极化诱导效应，增加载流子浓度，进一步增强极化电场。

Description

一种具有双掺杂Al组分渐变分离层的紫外探测器
技术领域
本发明涉及一种具有双掺杂Al组分渐变分离层的紫外探测器，属于半导体光电子器件领域。
背景技术
作为直接带隙半导体材料的AlxGa1-xN，禁带宽度随着Al组分的不同从3.42 eV到6.8 eV连续可调，其发射光谱范围为200-365 nm，恰好覆盖由于臭氧层吸收紫外光而产生的太阳光谱盲区 (240-280 nm)，并且AlGaN材料体积小，重量轻，寿命长，抗震性好；耐高温，耐腐蚀，抗辐照，适用于恶劣环境；工作电压低，不需要高压电源等特点，是制作太阳盲区紫外探测器的理想材料之一。
微弱光信号的探测是紫外探测领域中的一个重要的应用，尤其是单光子的探测。单光子探测要求探测器具备高响应，高增益的性能，因此探测器需要采用雪崩结构，光注入产生的电子空穴对在雪崩电场下加速，在获得足够的动能后，通过碰撞电离产生更多的电子-空穴对，实现雪崩增益，使微弱信号得到培增，从而对其进行探测。
然而，制备日盲波段的紫外探测器需要采用高Al组分的AlGaN材料。事实上，如果把AlxGa1-xN材料中的Al组分调整到x>0.4，就可以使制备的AlGaN紫外探测器的截止波长低于280 nm。但是，增加Al组分也会增大材料的晶格失配。此外，对于存在吸收层、分离层和倍增层的p-i-n结构的紫外探测器，由于各层之间的Al组分存在较大的差异，所以会导致较大的晶格失配，因而容易引发高位错密度，严重影响器件的晶体质量，从而产生较大的暗电流。另外，较大的Al组分差异还会增强压电极化效应，降低电子空穴离化能，进而影响微弱信号的探测，导致响应度降低。
发明内容
本发明针对现有技术中存在的不足，提供了一种具有双掺杂Al组分渐变分离层的紫外探测器，以解决现有技术中存在的问题。
为实现上述目的，本发明采用的技术方案如下：
一种具有双掺杂Al组分渐变分离层的紫外探测器，包括由下至上依次设置的衬底、AlN中间层、非掺杂i-Alx1Ga1-x1N缓冲层、n型n-Alx2Ga1-x2N层、非掺杂i-Alx3Ga1-x3N吸收层、双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层、非掺杂i-Alx7Ga1- x7N倍增层、p型p-Alx8Ga1-x8N层以及p型GaN层；在n型n-Alx1Ga1-x1N层上引出n型欧姆电极，在p型GaN层上引出p型欧姆电极，其中x1、x2、x3、x4、x5、x6、x7、x8满足x1>x2=x3=x4>x5>x6=x7>x8。
作为本发明的一种改进，所述衬底为可外延生长出极性、半极性GaN基材料的蓝宝石衬底。
作为本发明的一种改进，所述AlN中间层的厚度为5-5000 nm，非掺杂i-Alx1Ga1-x1N缓冲层的厚度为50-5000 nm，n型n-Alx2Ga1-x2N层的厚度为200-5000 nm，非掺杂i-Alx3Ga1- x3N吸收层的厚度为100-250 nm，非掺杂i-Alx7Ga1-x7N倍增层的厚度为100-250 nm，p型p-Alx8Ga1-x8N层的厚度为100-200 nm，p型GaN层的厚度为50-100 nm。
作为本发明的一种改进，所述双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层包括从下到上依次进行设置的p型掺杂p-Alx4Ga1-x4N层、非掺杂i-Alx5Ga1-x5N层以及n型掺杂n-Alx6Ga1-x6N层；p型掺杂层与非掺杂i-Alx5Ga1-x5N层的交界处设有第一Al组分渐变层，并且Al组分为渐变方式进行生长；非掺杂i-Alx5Ga1-x5N层以及n型掺杂n-Alx6Ga1-x6N层的交界处设有第二Al组分渐变层，并且Al组分为渐变方式进行生长。
作为本发明的一种改进，所述非掺杂i-Alx5Ga1-x5N层的厚度为20-100 nm；所述p型掺杂p-Alx4Ga1-x4N层的厚度为20-100 nm，其中包括5-10 nm 的第一Al组分渐变层；n型掺杂n-Alx6Ga1-x6N层的厚度为20-100 nm，其中包括5-10 nm 的第二Al组分渐变层。
作为本发明的一种改进，所述p型掺杂p-Alx4Ga1-x4N层利用Mg、Be、Zn和Cd等p型杂质进行掺杂，其中的空穴浓度为1×1015-1×1019cm-3；n型掺杂n-Alx6Ga1-x6N层利用Si、S、Se和Te等n型杂质进行掺杂，其中的电子浓度为1×1015-1×1020cm-3。
本发明公开了一种具有双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层的紫外探测器，能够有效降低位错密度，提高晶体质量，降低暗电流，同时减弱压电极化效应，进一步增强分离层中的极化电场，提高紫外探测器的响应度和灵敏度。
由于采用了以上技术，本发明较现有技术相比，具有的有益效果如下：
本发明提供的一种具有双掺杂Al组分渐变分离层的紫外探测器，通过对分离层与吸收层之间的异质结界面处进行p型掺杂，以及对分离层与倍增层之间的异质结界面处进行n型掺杂，可充分利用存在于氮化物这一极性材料中的强极化效应，形成与极化电场方向一致的电场，从而可以增强极化电场，显著提高空穴进入倍增区的动能，明显降低雪崩击穿电压，减小雪崩击穿时的暗电流，显著提高雪崩倍增因子，进而提高探测器的灵敏度和响应度。此外，Al组分渐变层的插入能有效减少由于Al组分相差过大引起的较大晶格失配，有利于减少异质界面处的位错密度，提高晶体质量，降低探测器中的暗电流，减少探测器工作过程中的噪声，提高了探测器响应度。并且，Al组分渐变层的引入能有效释放晶格形变产生的应力，减弱压电极化电场。但同时伴随的极化诱导效应，却有利于增加载流子浓度，进一步增强极化电场。因此，本发明提供的一种具有双掺杂Al组分渐变分离层，对于提高紫外探测器的响应度和灵敏度具有十分重要的意义。
附图说明
图1为本发明提供的具有双掺杂Al组分渐变分离层紫外探测器的层结构示意图；
图2为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器的双掺杂Al组分分离层的放大断面结构示意图；
图3为现有的具有吸收-分离-倍增层结构的紫外探测器的层结构示意图；
图中：101、衬底，102、AlN中间层，103、非掺杂i-Alx1Ga1-x1N缓冲层，104、n型n-Alx2Ga1-x2N层，105、非掺杂i-Alx3Ga1-x3N吸收层，106、双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层，107、非掺杂i-Alx7Ga1-x7N倍增层，108、p型p-Alx8Ga1-x8N层，109、p型GaN层，110、n型欧姆电极，111 p型欧姆电极，1061、p型掺杂p-Alx4Ga1-x4N层，1062、非掺杂i-Alx5Ga1-x5N层，1063、n型掺杂n-Alx6Ga1-x6N层，1064、第一Al组分渐变层，1065、第二Al组分渐变层，203、非掺杂i-Aly1Ga1-y1N缓冲层，204、n型n-Aly2Ga1-y2N层，205、非掺杂i-Aly3Ga1-y3N吸收层，206、n型n-Aly4Ga1-y4N分离层，207、非掺杂i-Aly5Ga1-y5N倍增层，208、p型p-Aly6Ga1-y6N层。
具体实施方式
下面结合附图和具体实施方式，进一步阐明本发明。
实施例1
一种具有双掺杂Al组分渐变分离层的紫外探测器，包括由下至上依次设置的衬底101、AlN中间层102、非掺杂i-Alx1Ga1-x1N缓冲层103、n型n-Alx2Ga1-x2N层104、非掺杂i-Alx3Ga1-x3N吸收层105、双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层106、非掺杂i-Alx7Ga1-x7N倍增层107、p型p-Alx8Ga1-x8N层108以及p型GaN层109；在n型n-Alx1Ga1-x1N层104上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111，其中x1、x2、x3、x4、x5、x6、x7、x8满足x1>x2=x3=x4>x5>x6=x7>x8。
如图1所示为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器，由下至上依次设置的c面蓝宝石衬底101，AlN中间层102，非掺杂i-Al0.65Ga0.35N缓冲层103，n型n-Al0.60Ga0.40N层104，非掺杂i-Al0.60Ga0.40N吸收层105，双掺杂Al组分渐变p-Al0.60Ga0.40N/i-Al0.50Ga0.50N/n-Al0.40Ga0.60N分离层106，非掺杂i-Al0.40Ga0.60N倍增层107，p型p-Al0.35Ga0.65N层108，p型GaN层109，在n型n-Al0.60Ga0.40N层104上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111。
所述的AlN中间层102的厚度为500 nm，非掺杂i-Al0.65Ga0.35N缓冲层103的厚度为1000 nm，n型n-Al0.60Ga0.40N层104的厚度为500 nm，非掺杂i-Al0.60Ga0.40N吸收层105的厚度为100 nm，非掺杂i-Al0.40Ga0.60N倍增层107厚度为100 nm，p型p-Al0.35Ga0.65N层108的厚度为100 nm，p型GaN层109厚度为50 nm。
所述衬底101为可外延生长出极性、半极性GaN基材料的蓝宝石衬底101。
图2为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器的双掺杂Al组分分离层106的放大断面结构示意图。双掺杂Al组分渐变p-Al0.60Ga0.40N/i-Al0.50Ga0.50N/n-Al0.40Ga0.60N分离层106包括由下至上依次设置的p型掺杂p-Al0.60Ga0.40N层1061、非掺杂i-Al0.50Ga0.50N层1062和n型掺杂n-Al0.40Ga0.60N层1063，并且p型掺杂p-Al0.60Ga0.40N层1061与非掺杂i-Al0.50Ga0.50N层1062的交界处设有第一Al组分渐变层1064（图1和图2中以虚线和阴影标出），并且Al组分为渐变方式进行生长，即界面处采用Al组分从0.60渐变到0.50方式生长，n型掺杂n-Al0.40Ga0.60N层1063与非掺杂i-Al0.50Ga0.50N层1062的交界处设有第二Al组分渐变层1065（图1和图2中以虚线和阴影标出），并且Al组分为渐变方式进行生长，即界面处采用Al组分从0.50渐变到0.40方式生长。
非掺杂i-Al0.50Ga0.50N层1062的厚度为20 nm；p型掺杂p-Al0.60Ga0.40N层1061的厚度为20 nm,其中包括5 nm的第一Al组分渐变层1064（p型掺杂Al组分渐变层）； n型掺杂n-Al0.40Ga0.60N层1063的厚度为20 nm，其中包括5 nm的第二Al组分渐变层1065（n型掺杂Al组分渐变层）。
所述的双掺杂Al组分渐变p-Al0.60Ga0.40N/i-Al0.50Ga0.50N/n-Al0.40Ga0.60N分离层106中p型掺杂p-Al0.60Ga0.40N层1061利用Mg进行掺杂，其中Mg掺杂的空穴浓度为1×1015cm-3。
所述的双掺杂Al组分渐变p-Al0.60Ga0.40N/i-Al0.50Ga0.50N/n-Al0.40Ga0.60N分离层106中n型掺杂n-Al0.40Ga0.60N层1063利用Si进行掺杂，其中Si掺杂的电子浓度为1×1015cm-3。
所述p型欧姆电极111和n型欧姆电极110均由Ni/Au合金材料构成。
实施例2
一种具有双掺杂Al组分渐变分离层的紫外探测器，包括由下至上依次设置的衬底101、AlN中间层102、非掺杂i-Alx1Ga1-x1N缓冲层103、n型n-Alx2Ga1-x2N层104、非掺杂i-Alx3Ga1-x3N吸收层105、双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层106、非掺杂i-Alx7Ga1-x7N倍增层107、p型p-Alx8Ga1-x8N层108以及p型GaN层109；在n型n-Alx1Ga1-x1N层104上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111，其中x1、x2、x3、x4、x5、x6、x7、x8满足x1>x2=x3=x4>x5>x6=x7>x8。
如图1所示为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器，由下至上依次设置的c面蓝宝石衬底101，AlN中间层102，非掺杂i-Al0.60Ga0.40N缓冲层103，n型n-Al0.55Ga0.45N层104，非掺杂i-Al0.55Ga0.45N吸收层105，双掺杂Al组分渐变p-Al0.55Ga0.45N/i-Al0.45Ga0.55N/n-Al0.35Ga0.65N分离层106，非掺杂i-Al0.35Ga0.65N倍增层107，p型p-Al0.3Ga0.7N层108，p型GaN层109，在n型n-Al0.55Ga0.45N层104上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111。
所述的AlN中间层102的厚度为1000 nm，非掺杂i-Al0.60Ga0.40N缓冲层103的厚度为2000 nm，n型n-Al0.55Ga0.45N层104的厚度为1000 nm，非掺杂i-Al0.55Ga0.45N吸收层105的厚度为200 nm，非掺杂i-Al0.35Ga0.65N倍增层107厚度为200 nm，p型p-Al0.3Ga0.7N层108的厚度为150 nm，p型GaN层109厚度为60 nm。
所述衬底101为可外延生长出极性、半极性GaN基材料的蓝宝石衬底101。
图2为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器的双掺杂Al组分分离层106的放大断面结构示意图。双掺杂Al组分渐变p-Al0.55Ga0.45N/i-Al0.45Ga0.55N/n-Al0.35Ga0.65N分离层106包括由下至上依次设置的p型掺杂p-Al0.55Ga0.45N层1061、非掺杂i-Al0.45Ga0.55N层1062和n型掺杂n-Al0.35Ga0.65N层1063，并且p型掺杂p-Al0.55Ga0.45N层1061与非掺杂i-Al0.45Ga0.55N层1062的交界处设有第一Al组分渐变层1064（图1和图2中以虚线和阴影标出），并且Al组分为渐变方式进行生长，即界面处采用Al组分从0.55渐变到0.45方式生长，n型掺杂n-Al0.35Ga0.65N层1063与非掺杂i-Al0.45Ga0.55N层1062的交界处设有第二Al组分渐变层1065（图1和图2中以虚线和阴影标出），并且Al组分为渐变方式进行生长，即界面处采用Al组分从0.45渐变到0.35方式生长。
非掺杂i-Al0.45Ga0.55N层1062的厚度为50 nm；p型掺杂p-Al0.55Ga0.45N层1061的厚度为50 nm,其中包括6 nm的第一Al组分渐变层1064（p型掺杂Al组分渐变层）； n型掺杂n-Al0.35Ga0.65N层1063的厚度为50 nm，其中包括6 nm的第二Al组分渐变层1065（n型掺杂Al组分渐变层）。
所述的双掺杂Al组分渐变p-Al0.55Ga0.45N/i-Al0.45Ga0.55N/n-Al0.35Ga0.65N分离层106中p型掺杂p-Al0.55Ga0.45N层1061利用Mg进行掺杂，其中Mg掺杂的空穴浓度为1×1017cm-3。
所述的双掺杂Al组分渐变p-Al0.55Ga0.45N/i-Al0.45Ga0.55N/n-Al0.35Ga0.65N分离层106中n型掺杂n-Al0.35Ga0.65N层1063利用Si进行掺杂，其中Si掺杂的电子浓度为1×1019cm-3。
所述p型欧姆电极111和n型欧姆电极110均由Ni/Au合金材料构成。
实施例3
一种具有双掺杂Al组分渐变分离层的紫外探测器，包括由下至上依次设置的衬底101、AlN中间层102、非掺杂i-Alx1Ga1-x1N缓冲层103、n型n-Alx2Ga1-x2N层104、非掺杂i-Alx3Ga1-x3N吸收层105、双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层106、非掺杂i-Alx7Ga1-x7N倍增层107、p型p-Alx8Ga1-x8N层108以及p型GaN层109；在n型n-Alx1Ga1-x1N层104上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111，其中x1、x2、x3、x4、x5、x6、x7、x8满足x1>x2=x3=x4>x5>x6=x7>x8。
如图1所示为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器，由下至上依次设置的c面蓝宝石衬底101，AlN中间层102，非掺杂i-Al0.55Ga0.45N缓冲层103，n型n-Al0.50Ga0.50N层104，非掺杂i-Al0.50Ga0.50N吸收层105，双掺杂Al组分渐变p-Al0.50Ga0.50N/i-Al0.40Ga0.60N/n-Al0.30Ga0.70N分离层106，非掺杂i-Al0.30Ga0.70N倍增层107，p型p-Al0.25Ga0.75N层108，p型GaN层109，在n型n-Al0.50Ga0.50N层104上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111。
所述的AlN中间层102的厚度为5000 nm，非掺杂i-Al0.55Ga0.45N缓冲层103的厚度为5000 nm，n型n-Al0.55Ga0.45N层104的厚度为2000 nm，非掺杂i-Al0.50Ga0.50N吸收层105的厚度为250 nm，非掺杂i-Al0.30Ga070N倍增层107厚度为250 nm，p型p-Al0.25Ga0.75N层108的厚度为200 nm，p型GaN层109厚度为100 nm。
所述衬底101为可外延生长出极性、半极性GaN基材料的蓝宝石衬底101。
图2为本发明提供的具有双掺杂Al组分渐变分离层的紫外探测器的双掺杂Al组分分离层106的放大断面结构示意图。双掺杂Al组分渐变p-Al0.50Ga0.50N/i-Al0.40Ga0.60N/n-Al0.30Ga0.70N分离层106包括由下至上依次设置的p型掺杂p-Al0.50Ga0.50N层1061、非掺杂i-Al0.40Ga0.60N层1062和n型掺杂n-Al0.30Ga0.60N层1063，并且p型掺杂p-Al0.50Ga0.50N层1061与非掺杂i-Al0.40Ga0.60N层1062的交界处设有第一Al组分渐变层1064（图1和图2中以虚线和阴影标出），并且Al组分为渐变方式进行生长，即界面处采用Al组分从0.50渐变到0.40方式生长，n型掺杂n-Al0.30Ga0.70N层1063与非掺杂i-Al0.40Ga0.60N层1062的交界处设有第二Al组分渐变层1065（图1和图2中以虚线和阴影标出），并且Al组分为渐变方式进行生长，即界面处采用Al组分从0.40渐变到0.30方式生长。
非掺杂i-Al0.40Ga0.60N层1062的厚度为100 nm；p型掺杂p-Al0.50Ga0.50N层1061的厚度为100 nm,其中包括10nm的第一Al组分渐变层1064（p型掺杂Al组分渐变层）； n型掺杂n-Al0.30Ga0.70N层1063的厚度为100 nm，其中包括10 nm的第二Al组分渐变层1065（n型掺杂Al组分渐变层）。
所述的双掺杂Al组分渐变p-Al0.50Ga0.50N/i-Al0.40Ga0.60N/n-Al0.30Ga0.70N分离层106中p型掺杂p-Al0.50Ga0.50N层1061利用Mg进行掺杂，其中Mg掺杂的空穴浓度为1×1019cm-3。
所述的双掺杂Al组分渐变p-Al0.50Ga0.50N/i-Al0.40Ga0.60N/n-Al0.30Ga0.70N分离层106中n型掺杂n-Al0.30Ga0.70N层1063利用Si进行掺杂，其中Si掺杂的电子浓度为1×1020cm-3。
所述p型欧姆电极111和n型欧姆电极110均由Ni/Au合金材料构成。
实施例4
图3为现有的具有吸收-分离-倍增层结构的紫外探测器的层结构示意图。其结构从下至上依次设置为：衬底101，AlN中间层102、非掺杂i-Aly1Ga1-y1N缓冲层203，n型n-Aly2Ga1-y2N层204，非掺杂i-Aly3Ga1-y3N吸收层205，n型n-Aly4Ga1-y4N分离层206，非掺杂i-Aly5Ga1-y5N倍增层207，p型p-Aly6Ga1-y6N层208，p型GaN层109，在n型n-Aly2Ga1-y2N层204上引出n型欧姆电极110，在p型GaN层109上引出p型欧姆电极111，所述y1、y2、y3、y4、y5、y6满足y1>y2>y3>y4>y5>y6。
需着重说明的是，本发明的双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层106包括有p型掺杂p-Alx4Ga1-x4N层1061、非掺杂i-Alx5Ga1-x5N层1062和n型掺杂n-Alx6Ga1-x6N层1063，并且p型掺杂p-Al0.55Ga0.45N层1061与非掺杂i-Al0.45Ga0.55N层1062的交界处设有第一Al组分渐变层1064，并且Al组分为渐变方式进行生长，n型掺杂n-Al0.35Ga0.65N层1063与非掺杂i-Al0.45Ga0.55N层1062的交界处设有第二Al组分渐变层1065，并且Al组分为渐变方式进行生长。此部分是本发明能使极化电场进一步增强，晶体质量提高的关键部分，其主要作用在于形成与极化电场方向一致的电场，减小压电极化效应，进一步增强极化电场，并且有效降低位错密度，提高晶体质量，从而提高紫外探测器的响应度和灵敏度。
上述实施例仅为本发明的优选技术方案，而不应视为对于本发明的限制，本发明的保护范围应以权利要求记载的技术方案，包括权利要求记载的技术方案中技术特征的等同替换方案为保护范围，即在此范围内的等同替换改进，也在本发明的保护范围之内。

Claims (6)

1.一种具有双掺杂Al组分渐变分离层的紫外探测器，其特征在于：包括由下至上依次设置的衬底(101)、AlN中间层(102)、非掺杂i-Alx1Ga1-x1N缓冲层(103)、n型n-Alx2Ga1-x2N层(104)、非掺杂i-Alx3Ga1-x3N吸收层(105)、双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层(106)、非掺杂i-Alx7Ga1-x7N倍增层(107)、p型p-Alx8Ga1-x8N层(108)以及p型GaN层(109)；在n型n-Alx1Ga1-x1N层(104)上引出n型欧姆电极(110)，在p型GaN层(109)上引出p型欧姆电极(111)，其中x1、x2、x3、x4、x5、x6、x7、x8满足x1>x2=x3=x4>x5>x6=x7>x8。
2.根据权利要求1所述的一种具有双掺杂Al组分渐变分离层的紫外探测器，其特征在于：所述衬底(101)为可外延生长出极性、半极性GaN基材料的蓝宝石衬底。
3.根据权利要求1所述的一种具有双掺杂Al组分渐变分离层的紫外探测器，其特征在于：所述AlN中间层(102)的厚度为5-5000 nm，非掺杂i-Alx1Ga1-x1N缓冲层(103)的厚度为50-5000 nm，n型n-Alx2Ga1-x2N层(104)的厚度为200-5000 nm，非掺杂i-Alx3Ga1-x3N吸收层(105)的厚度为100-250 nm，非掺杂i-Alx7Ga1-x7N倍增层(107)的厚度为100-250 nm，p型p-Alx8Ga1-x8N层(108)的厚度为100-200 nm，p型GaN层(109)的厚度为50-100 nm。
4.根据权利要求1所述的一种具有双掺杂Al组分渐变分离层的紫外探测器，其特征在于：所述双掺杂Al组分渐变p-Alx4Ga1-x4N/i-Alx5Ga1-x5N/n-Alx6Ga1-x6N分离层(106)包括从下到上依次进行设置的p型掺杂p-Alx4Ga1-x4N层(1061)、非掺杂i-Alx5Ga1-x5N层(1062)以及n型掺杂n-Alx6Ga1-x6N层(1063)；p型掺杂层(1061)与非掺杂i-Alx5Ga1-x5N层(1062)的交界处设有第一Al组分渐变层（1064），并且Al组分为渐变方式进行生长；非掺杂i-Alx5Ga1-x5N层（1062)与n型掺杂n-Alx6Ga1-x6N层（1063)的交界处设有第二A1组分渐变层（1065)，
并且Al组分为渐变方式进行生长。
5.根据权利要求4所述的一种具有双掺杂Al组分渐变分离层的紫外探测器，其特征在于：所述非掺杂i-Alx5Ga1-x5N层(1062)的厚度为20-100 nm；所述p型掺杂p-Alx4Ga1-x4N层(1061)的厚度为20-100 nm，其中包括5-10 nm 的第一Al组分渐变层（1064）；n型掺杂n-Alx6Ga1-x6N层(1063)的厚度为20-100 nm，其中包括5-10 nm 的第二Al组分渐变层（1065）。
6.根据权利要求4所述的一种具有双掺杂Al组分渐变分离层的紫外探测器，其特征在于：所述p型掺杂p-Alx4Ga1-x4N层(1061)的空穴浓度为1×1015-1×1019cm-3；n型掺杂n-Alx6Ga1-x6N层(1063)的电子浓度为1×1015-1×1020 cm-3。
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