IL183814A0 - Reduction of etch mask feature critical dimensions - Google Patents

Reduction of etch mask feature critical dimensions

Info

Publication number
IL183814A0
IL183814A0 IL183814A IL18381407A IL183814A0 IL 183814 A0 IL183814 A0 IL 183814A0 IL 183814 A IL183814 A IL 183814A IL 18381407 A IL18381407 A IL 18381407A IL 183814 A0 IL183814 A0 IL 183814A0
Authority
IL
Israel
Prior art keywords
reduction
etch mask
critical dimensions
mask feature
feature critical
Prior art date
Application number
IL183814A
Other languages
English (en)
Original Assignee
Lam Res Corp
Sadjadi S M Reza
Huang Zhisong
Marks Jeffrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Sadjadi S M Reza, Huang Zhisong, Marks Jeffrey filed Critical Lam Res Corp
Publication of IL183814A0 publication Critical patent/IL183814A0/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IL183814A 2004-12-16 2007-06-10 Reduction of etch mask feature critical dimensions IL183814A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/016,455 US20060134917A1 (en) 2004-12-16 2004-12-16 Reduction of etch mask feature critical dimensions
PCT/US2005/044505 WO2006065630A2 (en) 2004-12-16 2005-12-06 Reduction of etch mask feature critical dimensions

Publications (1)

Publication Number Publication Date
IL183814A0 true IL183814A0 (en) 2007-09-20

Family

ID=36588391

Family Applications (1)

Application Number Title Priority Date Filing Date
IL183814A IL183814A0 (en) 2004-12-16 2007-06-10 Reduction of etch mask feature critical dimensions

Country Status (7)

Country Link
US (1) US20060134917A1 (https=)
JP (1) JP2008524851A (https=)
KR (1) KR20070092282A (https=)
CN (1) CN100543946C (https=)
IL (1) IL183814A0 (https=)
TW (1) TW200641519A (https=)
WO (1) WO2006065630A2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7250371B2 (en) * 2003-08-26 2007-07-31 Lam Research Corporation Reduction of feature critical dimensions
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
JP2007012819A (ja) * 2005-06-29 2007-01-18 Toshiba Corp ドライエッチング方法
US7273815B2 (en) * 2005-08-18 2007-09-25 Lam Research Corporation Etch features with reduced line edge roughness
US7682516B2 (en) * 2005-10-05 2010-03-23 Lam Research Corporation Vertical profile fixing
US7264743B2 (en) * 2006-01-23 2007-09-04 Lam Research Corporation Fin structure formation
US7309646B1 (en) * 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
US20080152823A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Self-limiting plating method
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
US7521358B2 (en) * 2006-12-26 2009-04-21 Lam Research Corporation Process integration scheme to lower overall dielectric constant in BEoL interconnect structures
JP5065787B2 (ja) * 2007-07-27 2012-11-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および記憶媒体
JP2010041028A (ja) 2008-07-11 2010-02-18 Tokyo Electron Ltd 基板処理方法
US7772122B2 (en) * 2008-09-18 2010-08-10 Lam Research Corporation Sidewall forming processes
US8394722B2 (en) * 2008-11-03 2013-03-12 Lam Research Corporation Bi-layer, tri-layer mask CD control
US9601349B2 (en) 2009-02-17 2017-03-21 Macronix International Co., Ltd. Etching method
US20120094494A1 (en) * 2010-10-14 2012-04-19 Macronix International Co., Ltd. Methods for etching multi-layer hardmasks
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
CN103000505B (zh) * 2011-09-16 2015-10-14 中芯国际集成电路制造(上海)有限公司 多栅器件的形成方法
CN104157556B (zh) * 2013-05-15 2017-08-25 中芯国际集成电路制造(上海)有限公司 金属硬掩模开口刻蚀方法
CN103337476A (zh) * 2013-06-27 2013-10-02 上海华力微电子有限公司 一种减小铜互连沟槽关键尺寸的方法
CN103346119A (zh) * 2013-06-27 2013-10-09 上海华力微电子有限公司 一种减小铜互连沟槽关键尺寸的方法
GB201322931D0 (en) 2013-12-23 2014-02-12 Spts Technologies Ltd Method of etching
US9324578B2 (en) 2014-01-29 2016-04-26 Taiwan Semiconductor Manufacturing Company Limited Hard mask reshaping
CN104241100A (zh) * 2014-09-23 2014-12-24 上海华力微电子有限公司 小尺寸图形的制作方法
US10037890B2 (en) * 2016-10-11 2018-07-31 Lam Research Corporation Method for selectively etching with reduced aspect ratio dependence
KR102313431B1 (ko) 2016-11-21 2021-10-18 나노스트링 테크놀로지스, 인크. 화학적 조성물 및 이것을 사용하는 방법
US10734238B2 (en) * 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
JP7145031B2 (ja) * 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
AU2019271028B2 (en) 2018-05-14 2025-09-18 Bruker Spatial Biology, Inc. Chemical compositions and methods of using same
US10818508B2 (en) * 2018-10-17 2020-10-27 Nanya Technology Corporation Semiconductor structure and method for preparing the same
JP2021174902A (ja) * 2020-04-27 2021-11-01 東京エレクトロン株式会社 処理方法及び基板処理装置
CN116031203B (zh) * 2022-11-30 2026-04-03 联合微电子中心有限责任公司 半导体器件接触孔的制备方法
US12224160B2 (en) 2023-05-23 2025-02-11 Tokyo Electron Limited Topographic selective deposition
CN120824255B (zh) * 2025-09-16 2026-02-24 芯联集成电路制造股份有限公司 一种半导体器件及其制造方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
US4871630A (en) * 1986-10-28 1989-10-03 International Business Machines Corporation Mask using lithographic image size reduction
US5013680A (en) * 1990-07-18 1991-05-07 Micron Technology, Inc. Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5296410A (en) * 1992-12-16 1994-03-22 Samsung Electronics Co., Ltd. Method for separating fine patterns of a semiconductor device
JPH0997833A (ja) * 1995-07-22 1997-04-08 Ricoh Co Ltd 半導体装置とその製造方法
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
GB9616225D0 (en) * 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
US5895740A (en) * 1996-11-13 1999-04-20 Vanguard International Semiconductor Corp. Method of forming contact holes of reduced dimensions by using in-situ formed polymeric sidewall spacers
US5766998A (en) * 1996-12-27 1998-06-16 Vanguard International Semiconductor Corporation Method for fabricating narrow channel field effect transistors having titanium shallow junctions
US5907775A (en) * 1997-04-11 1999-05-25 Vanguard International Semiconductor Corporation Non-volatile memory device with high gate coupling ratio and manufacturing process therefor
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
FR2777145B1 (fr) * 1998-04-02 2000-04-28 Alsthom Cge Alcatel Modulateur multiporteuses large bande et procede de programmation correspondant
US6218288B1 (en) * 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
US6100014A (en) * 1998-11-24 2000-08-08 United Microelectronics Corp. Method of forming an opening in a dielectric layer through a photoresist layer with silylated sidewall spacers
US6162733A (en) * 1999-01-15 2000-12-19 Lucent Technologies Inc. Method for removing contaminants from integrated circuits
US6368974B1 (en) * 1999-08-02 2002-04-09 United Microelectronics Corp. Shrinking equal effect critical dimension of mask by in situ polymer deposition and etching
US6905800B1 (en) * 2000-11-21 2005-06-14 Stephen Yuen Etching a substrate in a process zone
US6656282B2 (en) * 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
US6750150B2 (en) * 2001-10-18 2004-06-15 Macronix International Co., Ltd. Method for reducing dimensions between patterns on a photoresist
KR100448714B1 (ko) * 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US7105442B2 (en) * 2002-05-22 2006-09-12 Applied Materials, Inc. Ashable layers for reducing critical dimensions of integrated circuit features
US20030235998A1 (en) * 2002-06-24 2003-12-25 Ming-Chung Liang Method for eliminating standing waves in a photoresist profile
US20040010769A1 (en) * 2002-07-12 2004-01-15 Macronix International Co., Ltd. Method for reducing a pitch of a procedure
US6756619B2 (en) * 2002-08-26 2004-06-29 Micron Technology, Inc. Semiconductor constructions
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US7090967B2 (en) * 2002-12-30 2006-08-15 Infineon Technologies Ag Pattern transfer in device fabrication
US6780708B1 (en) * 2003-03-05 2004-08-24 Advanced Micro Devices, Inc. Method of forming core and periphery gates including two critical masking steps to form a hard mask in a core region that includes a critical dimension less than achievable at a resolution limit of lithography
US6829056B1 (en) * 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US7250371B2 (en) * 2003-08-26 2007-07-31 Lam Research Corporation Reduction of feature critical dimensions
US7012027B2 (en) * 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US6864184B1 (en) * 2004-02-05 2005-03-08 Advanced Micro Devices, Inc. Method for reducing critical dimension attainable via the use of an organic conforming layer
US20060032833A1 (en) * 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US7723235B2 (en) * 2004-09-17 2010-05-25 Renesas Technology Corp. Method for smoothing a resist pattern prior to etching a layer using the resist pattern
US7053003B2 (en) * 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
US7282441B2 (en) * 2004-11-10 2007-10-16 International Business Machines Corporation De-fluorination after via etch to preserve passivation
US20070026682A1 (en) * 2005-02-10 2007-02-01 Hochberg Michael J Method for advanced time-multiplexed etching
US7241683B2 (en) * 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
US7049209B1 (en) * 2005-04-01 2006-05-23 International Business Machines Corporation De-fluorination of wafer surface and related structure
KR100810303B1 (ko) * 2005-04-28 2008-03-06 삼성전자주식회사 휴대단말기의 데이터 표시 및 전송방법
US7695632B2 (en) * 2005-05-31 2010-04-13 Lam Research Corporation Critical dimension reduction and roughness control
US7273815B2 (en) * 2005-08-18 2007-09-25 Lam Research Corporation Etch features with reduced line edge roughness

Also Published As

Publication number Publication date
US20060134917A1 (en) 2006-06-22
WO2006065630A2 (en) 2006-06-22
WO2006065630A3 (en) 2007-04-12
KR20070092282A (ko) 2007-09-12
TW200641519A (en) 2006-12-01
CN100543946C (zh) 2009-09-23
JP2008524851A (ja) 2008-07-10
CN101116177A (zh) 2008-01-30

Similar Documents

Publication Publication Date Title
IL183814A0 (en) Reduction of etch mask feature critical dimensions
AU302804S (en) Mask assembly
GB0413554D0 (en) Improved method and apparartus for the etching of microstructures
IL173487A0 (en) Laryingeal mask
AU2003277695A1 (en) See-through mask
ZA200605348B (en) Solid forms of anti-EGFR-antibodies
AU2003236991A8 (en) Representations of processes
AU301006S (en) Nasal mask
AU302257S (en) Mask shell
SG128451A1 (en) Improved etch stop layer
GB2430803B (en) Integrated low-k hard mask
IL176426A0 (en) Di-steroidal prodrugs of estradiol
TWI370114B (en) Purification of fluorinated alcohols
GB0401622D0 (en) Plasma etching process
GB0510701D0 (en) Face mask
TW579860U (en) Mask
GB0425636D0 (en) Etching
TW577330U (en) Improved structure of mask
TW583999U (en) Improved structure of mask
GB0312838D0 (en) Use of tagetes extract
EP1658882A4 (en) NASAL MASK
GB0424497D0 (en) Anti-inflammatory agent
GB0413463D0 (en) Mask
GB0501558D0 (en) Face mask
GB0404518D0 (en) Protection of sanitaryware