IL160013A0 - Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography - Google Patents
Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiographyInfo
- Publication number
- IL160013A0 IL160013A0 IL16001302A IL16001302A IL160013A0 IL 160013 A0 IL160013 A0 IL 160013A0 IL 16001302 A IL16001302 A IL 16001302A IL 16001302 A IL16001302 A IL 16001302A IL 160013 A0 IL160013 A0 IL 160013A0
- Authority
- IL
- Israel
- Prior art keywords
- fabricating
- digital radiography
- mercuric iodide
- polycrystalline films
- iodide polycrystalline
- Prior art date
Links
- 229960003671 mercuric iodide Drugs 0.000 title 1
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000002601 radiography Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30896701P | 2001-07-30 | 2001-07-30 | |
| US10/158,494 US7186985B2 (en) | 2001-07-30 | 2002-05-30 | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography |
| PCT/US2002/024112 WO2003012855A1 (en) | 2001-07-30 | 2002-07-30 | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL160013A0 true IL160013A0 (en) | 2004-06-20 |
Family
ID=26855084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL16001302A IL160013A0 (en) | 2001-07-30 | 2002-07-30 | Method and apparatus for fabricating mercuric iodide polycrystalline films for digital radiography |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7186985B2 (xx) |
| EP (1) | EP1421613A4 (xx) |
| JP (1) | JP2004537651A (xx) |
| CA (1) | CA2454446A1 (xx) |
| IL (1) | IL160013A0 (xx) |
| WO (1) | WO2003012855A1 (xx) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL151634A0 (en) * | 2002-09-05 | 2003-04-10 | Real Time Radiography Ltd | Direct detection of high energy single photons |
| US20050160979A1 (en) * | 2004-01-26 | 2005-07-28 | Real-Time Radiography Ltd. | Method and apparatus for applying a polycrystalline film to a substrate |
| EP2206021B1 (en) * | 2007-10-30 | 2015-01-28 | New York University | Tracking and characterizing particles with holographic video microscopy |
| CN102365543A (zh) | 2009-01-16 | 2012-02-29 | 纽约大学 | 用全息视频显微术的自动实时粒子表征和三维速度计量 |
| KR101654140B1 (ko) | 2010-03-30 | 2016-09-09 | 삼성전자주식회사 | 산화물 반도체 트랜지스터를 구비한 엑스선 검출기 |
| KR101678671B1 (ko) | 2010-04-01 | 2016-11-22 | 삼성전자주식회사 | 이중 포토컨덕터를 구비한 엑스선 검출기 |
| DE102010021172B4 (de) | 2010-05-21 | 2013-04-18 | Siemens Aktiengesellschaft | Strahlenwandler mit einer direkt konvertierenden Halbleiterschicht und Verfahren zur Herstellung eines solchen Strahlenwandlers |
| FR2961911A1 (fr) | 2010-06-29 | 2011-12-30 | Commissariat Energie Atomique | Dispositif de detection de rayonnement et procede de fabrication |
| KR101820843B1 (ko) | 2011-02-18 | 2018-01-22 | 삼성전자주식회사 | 확산방지막을 구비한 엑스선 검출기 |
| CN102965617A (zh) * | 2012-11-20 | 2013-03-13 | 上海大学 | 超声波辅助下油浴真空物理气相沉积多晶碘化汞厚膜的装置和方法 |
| EP3105638B1 (en) | 2014-02-12 | 2020-07-22 | New York University | Fast feature identification for holographic tracking and characterization of colloidal particles |
| ES2913524T3 (es) | 2014-11-12 | 2022-06-02 | Univ New York | Huellas coloidales para materiales blandos usando caracterización holográfica total |
| JP6929560B2 (ja) | 2015-09-18 | 2021-09-01 | ニュー・ヨーク・ユニヴァーシティー | 精密スラリ内の大きい不純物粒子のホログラフィック検出及び特徴付け |
| JP7130242B2 (ja) | 2016-02-08 | 2022-09-05 | ニュー・ヨーク・ユニヴァーシティー | タンパク質凝集体のホログラフィ特徴付け |
| US10670677B2 (en) | 2016-04-22 | 2020-06-02 | New York University | Multi-slice acceleration for magnetic resonance fingerprinting |
| US10571415B2 (en) | 2016-08-02 | 2020-02-25 | Rolls-Royce Corporation | Methods and apparatuses for evaluating ceramic matrix composite components |
| US11543338B2 (en) | 2019-10-25 | 2023-01-03 | New York University | Holographic characterization of irregular particles |
| US11948302B2 (en) | 2020-03-09 | 2024-04-02 | New York University | Automated holographic video microscopy assay |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL49800A (en) | 1975-07-01 | 1979-11-30 | Us Energy | Purification of hgl2 for growth of nuclear detector quality crystals |
| US4030964A (en) | 1976-04-29 | 1977-06-21 | The United States Of America As Represented By The United States Energy Research And Development Administration | Temperature cycling vapor deposition HgI2 crystal growth |
| FR2541668B1 (fr) | 1983-02-28 | 1985-06-07 | Commissariat Energie Atomique | Procede de preparation d'iodure mercurique alpha de haute purete destine a etre utilise comme source de matiere premiere pour la croissance de monocristaux pour la detection nucleaire |
| US5204140A (en) | 1986-03-24 | 1993-04-20 | Ensci, Inc. | Process for coating a substrate with tin oxide |
| US4780174A (en) * | 1986-12-05 | 1988-10-25 | Lan Shan Ming | Dislocation-free epitaxial growth in radio-frequency heating reactor |
| JPH02284638A (ja) | 1989-04-26 | 1990-11-22 | Tadahiro Omi | 高性能プロセスガス供給装置 |
| JP3172627B2 (ja) | 1992-09-03 | 2001-06-04 | 東京エレクトロン株式会社 | 真空形成方法および真空形成装置 |
| EP0784801B1 (en) | 1994-09-29 | 2002-04-24 | DIRECT (Digital Imaging Readout) | A radiation detection system and processes for preparing the same |
| US5892227A (en) * | 1994-09-29 | 1999-04-06 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Radiation detection system and processes for preparing the same |
| JPH11183626A (ja) * | 1997-12-25 | 1999-07-09 | Shimadzu Corp | 放射線検出素子アレイ |
| JPH11218857A (ja) | 1998-01-30 | 1999-08-10 | Konica Corp | Ｘ線撮像装置 |
| JPH11354516A (ja) * | 1998-06-08 | 1999-12-24 | Sony Corp | シリコン酸化膜形成装置及びシリコン酸化膜形成方法 |
| JP3865187B2 (ja) | 1998-11-10 | 2007-01-10 | シャープ株式会社 | 置換フェニルエチレン前駆体およびその合成方法 |
| US6855859B2 (en) * | 1999-03-31 | 2005-02-15 | The Babcock & Wilcox Company | Method for controlling elemental mercury emissions |
| WO2002067014A1 (en) | 2001-02-18 | 2002-08-29 | Real-Time Radiography Ltd. | Wide band gap semiconductor composite detector plates for x-ray digital radiography |
| IL143851A0 (en) | 2001-06-19 | 2002-04-21 | Real Time Radiography Ltd | Systems for detection, imaging and absorption of high energy radiation |
| IL143853A0 (en) | 2001-06-19 | 2002-04-21 | Real Time Radiography Ltd | Laminated radiation detector and process for its fabrication |
-
2002
- 2002-05-30 US US10/158,494 patent/US7186985B2/en not_active Expired - Lifetime
- 2002-07-30 WO PCT/US2002/024112 patent/WO2003012855A1/en not_active Application Discontinuation
- 2002-07-30 IL IL16001302A patent/IL160013A0/xx unknown
- 2002-07-30 CA CA002454446A patent/CA2454446A1/en not_active Abandoned
- 2002-07-30 EP EP02752622A patent/EP1421613A4/en not_active Withdrawn
- 2002-07-30 JP JP2003517933A patent/JP2004537651A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US7186985B2 (en) | 2007-03-06 |
| CA2454446A1 (en) | 2003-02-13 |
| JP2004537651A (ja) | 2004-12-16 |
| EP1421613A1 (en) | 2004-05-26 |
| EP1421613A4 (en) | 2007-10-24 |
| WO2003012855A1 (en) | 2003-02-13 |
| US20030021382A1 (en) | 2003-01-30 |
| WO2003012855A8 (en) | 2003-09-18 |
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