IL153157A0 - Device and method for plasma processing and wave retardation plate - Google Patents

Device and method for plasma processing and wave retardation plate

Info

Publication number
IL153157A0
IL153157A0 IL15315702A IL15315702A IL153157A0 IL 153157 A0 IL153157 A0 IL 153157A0 IL 15315702 A IL15315702 A IL 15315702A IL 15315702 A IL15315702 A IL 15315702A IL 153157 A0 IL153157 A0 IL 153157A0
Authority
IL
Israel
Prior art keywords
wave retardation
retardation plate
plasma processing
plate
slot
Prior art date
Application number
IL15315702A
Other languages
English (en)
Original Assignee
Tadahiro Ohmi
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi, Tokyo Electron Ltd filed Critical Tadahiro Ohmi
Publication of IL153157A0 publication Critical patent/IL153157A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
IL15315702A 2001-03-28 2002-03-28 Device and method for plasma processing and wave retardation plate IL153157A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001094276 2001-03-28
JP2001340995A JP4402860B2 (ja) 2001-03-28 2001-11-06 プラズマ処理装置
PCT/JP2002/003112 WO2002080253A1 (fr) 2001-03-28 2002-03-28 Dispositif et procede de traitement par plasma, et plaque a onde lente

Publications (1)

Publication Number Publication Date
IL153157A0 true IL153157A0 (en) 2003-06-24

Family

ID=26612453

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15315702A IL153157A0 (en) 2001-03-28 2002-03-28 Device and method for plasma processing and wave retardation plate

Country Status (9)

Country Link
US (2) US7083701B2 (de)
EP (1) EP1300878B1 (de)
JP (1) JP4402860B2 (de)
KR (1) KR100497015B1 (de)
CN (1) CN1217390C (de)
AT (1) ATE320081T1 (de)
DE (1) DE60209697T2 (de)
IL (1) IL153157A0 (de)
WO (1) WO2002080253A1 (de)

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JP2004335789A (ja) * 2003-05-08 2004-11-25 Tadahiro Omi 基板処理装置のクリーニング方法
JP2005089823A (ja) * 2003-09-17 2005-04-07 Seiji Sagawa 成膜装置および成膜方法
EP1691403A4 (de) * 2003-12-04 2009-04-15 Tokyo Electron Ltd Verfahren zum reinigen der leitfähigen schichtoberfläche eines halbleitersubstrats
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JP4093212B2 (ja) * 2004-07-23 2008-06-04 東京エレクトロン株式会社 プラズマ処理装置
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JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
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US20090065486A1 (en) * 2006-02-28 2009-03-12 Tokyo Electron Limited Plasma treatment apparatus, and substrate heating mechanism to be used in the apparatus
JP2007250426A (ja) * 2006-03-17 2007-09-27 Sharp Corp プラズマ処理装置の電極構造およびこれを備えたプラズマ処理装置
US7485827B2 (en) 2006-07-21 2009-02-03 Alter S.R.L. Plasma generator
US20100183827A1 (en) * 2007-06-11 2010-07-22 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP4931716B2 (ja) * 2007-07-18 2012-05-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成室
JP2009152265A (ja) * 2007-12-19 2009-07-09 Tohoku Univ 光電変換素子製造装置及び方法、並びに光電変換素子
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WO2009128888A1 (en) 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
CN102047066B (zh) * 2008-04-14 2013-01-16 赫姆洛克半导体公司 用于沉积材料的制造设备和其中使用的电极
JP5396745B2 (ja) * 2008-05-23 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
JP4593652B2 (ja) * 2008-06-06 2010-12-08 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP5213530B2 (ja) 2008-06-11 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
JP4694596B2 (ja) * 2008-06-18 2011-06-08 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波の給電方法
WO2010007863A1 (ja) * 2008-07-15 2010-01-21 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及び冷却ジャケットの製造方法
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20110150719A1 (en) * 2008-08-22 2011-06-23 Tokyo Electron Limited Microwave introduction mechanism, microwave plasma source and microwave plasma processing apparatus
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
JP5189999B2 (ja) * 2009-01-29 2013-04-24 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、及びマイクロ波プラズマ処理装置のマイクロ波給電方法
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5461040B2 (ja) * 2009-03-23 2014-04-02 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
JP4918168B1 (ja) * 2011-03-31 2012-04-18 三井造船株式会社 誘導加熱装置
JP4980475B1 (ja) * 2011-03-31 2012-07-18 三井造船株式会社 誘導加熱装置
US9543123B2 (en) * 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP5005120B1 (ja) * 2012-01-26 2012-08-22 三井造船株式会社 誘導加熱方法
US20140263179A1 (en) * 2013-03-15 2014-09-18 Lam Research Corporation Tuning system and method for plasma-based substrate processing systems
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
KR102278075B1 (ko) * 2014-05-30 2021-07-19 세메스 주식회사 유전판 및 이를 포함하는 기판 처리 장치
EP3064765A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verbrennungsmotor
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
WO2016178674A1 (en) * 2015-05-06 2016-11-10 Reyes Armando Portfolio with integrated computer and accessory pockets
JP6509049B2 (ja) * 2015-06-05 2019-05-08 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
CN111836916B (zh) 2019-02-13 2022-06-14 东芝三菱电机产业系统株式会社 活性气体生成装置

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JPH0963793A (ja) 1995-08-25 1997-03-07 Tokyo Electron Ltd プラズマ処理装置
JP3549739B2 (ja) * 1998-08-27 2004-08-04 忠弘 大見 プラズマ処理装置
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
JP2000286240A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2001203098A (ja) * 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
US6388632B1 (en) * 1999-03-30 2002-05-14 Rohm Co., Ltd. Slot antenna used for plasma surface processing apparatus
JP2000286237A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
WO2000074127A1 (fr) * 1999-05-26 2000-12-07 Tokyo Electron Limited Dispositif de traitement au plasma
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
CN1251293C (zh) * 1999-11-15 2006-04-12 兰姆研究有限公司 用于加工系统的材料和气体化学组成

Also Published As

Publication number Publication date
CN1217390C (zh) 2005-08-31
EP1300878A4 (de) 2004-08-25
JP4402860B2 (ja) 2010-01-20
ATE320081T1 (de) 2006-03-15
EP1300878A1 (de) 2003-04-09
DE60209697D1 (de) 2006-05-04
EP1300878B1 (de) 2006-03-08
DE60209697T2 (de) 2006-11-09
US20060231208A1 (en) 2006-10-19
CN1460288A (zh) 2003-12-03
US7083701B2 (en) 2006-08-01
KR100497015B1 (ko) 2005-06-23
WO2002080253A1 (fr) 2002-10-10
US20040134613A1 (en) 2004-07-15
JP2002355550A (ja) 2002-12-10
KR20030004429A (ko) 2003-01-14

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Legal Events

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FF Patent granted
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees