IL140510A - Install a non-volatile semiconductor memory device - Google Patents

Install a non-volatile semiconductor memory device

Info

Publication number
IL140510A
IL140510A IL14051000A IL14051000A IL140510A IL 140510 A IL140510 A IL 140510A IL 14051000 A IL14051000 A IL 14051000A IL 14051000 A IL14051000 A IL 14051000A IL 140510 A IL140510 A IL 140510A
Authority
IL
Israel
Prior art keywords
memory cell
bit line
dummy
nonvolatile semiconductor
cell
Prior art date
Application number
IL14051000A
Other languages
English (en)
Hebrew (he)
Other versions
IL140510A0 (en
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of IL140510A0 publication Critical patent/IL140510A0/xx
Publication of IL140510A publication Critical patent/IL140510A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
IL14051000A 1999-04-23 2000-04-21 Install a non-volatile semiconductor memory device IL140510A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11588799 1999-04-23
JP2000111573A JP3359615B2 (ja) 1999-04-23 2000-04-13 不揮発性半導体記憶装置
PCT/JP2000/002653 WO2000065601A1 (fr) 1999-04-23 2000-04-21 Mémoire rémanente à semiconducteur

Publications (2)

Publication Number Publication Date
IL140510A0 IL140510A0 (en) 2002-02-10
IL140510A true IL140510A (en) 2004-06-20

Family

ID=26454308

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14051000A IL140510A (en) 1999-04-23 2000-04-21 Install a non-volatile semiconductor memory device

Country Status (8)

Country Link
EP (1) EP1091359B1 (ko)
JP (1) JP3359615B2 (ko)
KR (1) KR100598289B1 (ko)
AT (1) ATE352842T1 (ko)
AU (1) AU3842500A (ko)
DE (1) DE60033104T2 (ko)
IL (1) IL140510A (ko)
WO (1) WO2000065601A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100554829B1 (ko) * 2002-07-08 2006-02-22 주식회사 하이닉스반도체 센스증폭기
EP1597733B1 (de) * 2003-02-27 2009-12-02 Infineon Technologies AG Verfahren zum auslesen von uniform-channel-program-flash memory zellen
KR100739946B1 (ko) 2004-12-27 2007-07-16 주식회사 하이닉스반도체 더미 워드라인을 구비한 낸드 플래시 메모리 장치
DE102005058601A1 (de) 2004-12-27 2006-07-06 Hynix Semiconductor Inc., Icheon Flash-Speicherbauelement
KR100784862B1 (ko) 2006-01-09 2007-12-14 삼성전자주식회사 더미 셀을 포함하는 플래시 메모리 장치
JP2010123987A (ja) * 2010-01-14 2010-06-03 Hitachi Ltd 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290591A (ja) * 1993-03-31 1994-10-18 Sony Corp 半導体不揮発性記憶装置
JPH0757484A (ja) * 1993-08-11 1995-03-03 Sony Corp Ｎｏｒ型不揮発性メモリ制御回路
JP3570038B2 (ja) * 1994-11-21 2004-09-29 ソニー株式会社 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
DE60033104D1 (de) 2007-03-15
EP1091359B1 (en) 2007-01-24
DE60033104T2 (de) 2007-05-16
KR20010071596A (ko) 2001-07-28
EP1091359A4 (en) 2004-11-24
JP3359615B2 (ja) 2002-12-24
KR100598289B1 (ko) 2006-07-07
WO2000065601A1 (fr) 2000-11-02
JP2001006377A (ja) 2001-01-12
IL140510A0 (en) 2002-02-10
ATE352842T1 (de) 2007-02-15
EP1091359A1 (en) 2001-04-11
AU3842500A (en) 2000-11-10

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Legal Events

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