IL138104A0 - A method and apparatus that determine charged particle beam shaped codes - Google Patents
A method and apparatus that determine charged particle beam shaped codesInfo
- Publication number
- IL138104A0 IL138104A0 IL13810400A IL13810400A IL138104A0 IL 138104 A0 IL138104 A0 IL 138104A0 IL 13810400 A IL13810400 A IL 13810400A IL 13810400 A IL13810400 A IL 13810400A IL 138104 A0 IL138104 A0 IL 138104A0
- Authority
- IL
- Israel
- Prior art keywords
- charged particle
- particle beam
- beam shaped
- shaped codes
- determine charged
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/226,926 US6556702B1 (en) | 1999-01-06 | 1999-01-06 | Method and apparatus that determines charged particle beam shape codes |
PCT/US2000/000095 WO2000041207A1 (en) | 1999-01-06 | 2000-01-04 | A method and apparatus that determines charged particle beam shape codes |
Publications (1)
Publication Number | Publication Date |
---|---|
IL138104A0 true IL138104A0 (en) | 2001-10-31 |
Family
ID=22851021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13810400A IL138104A0 (en) | 1999-01-06 | 2000-01-04 | A method and apparatus that determine charged particle beam shaped codes |
Country Status (8)
Country | Link |
---|---|
US (1) | US6556702B1 (xx) |
EP (1) | EP1060498B1 (xx) |
JP (1) | JP2002534792A (xx) |
KR (1) | KR100417906B1 (xx) |
CA (1) | CA2322972A1 (xx) |
DE (1) | DE60023989T2 (xx) |
IL (1) | IL138104A0 (xx) |
WO (1) | WO2000041207A1 (xx) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001035808A (ja) * | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
US6815693B2 (en) * | 2000-02-18 | 2004-11-09 | Nikon Corporation | Charged-particle-beam microlithography apparatus and methods including proximity-effect correction |
TWI224806B (en) * | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
US6647137B1 (en) * | 2000-07-10 | 2003-11-11 | International Business Machines Corporation | Characterizing kernel function in photolithography based on photoresist pattern |
JP4717295B2 (ja) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
JP2003045874A (ja) * | 2001-07-27 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | 金属配線およびその作製方法、並びに金属配線基板およびその作製方法 |
US6998217B2 (en) * | 2003-01-06 | 2006-02-14 | Applied Materials, Inc. | Critical dimension edge placement and slope enhancement with central pixel dose addition and modulated inner pixels |
US7928404B2 (en) * | 2003-10-07 | 2011-04-19 | Multibeam Corporation | Variable-ratio double-deflection beam blanker |
US7462848B2 (en) * | 2003-10-07 | 2008-12-09 | Multibeam Systems, Inc. | Optics for generation of high current density patterned charged particle beams |
US20090008579A1 (en) * | 2003-10-07 | 2009-01-08 | Tokyo Electron Limited | Electron beam lithography apparatus and design method of patterned beam-defining aperture |
US7407252B2 (en) * | 2004-07-01 | 2008-08-05 | Applied Materials, Inc. | Area based optical proximity correction in raster scan printing |
US7529421B2 (en) * | 2004-07-01 | 2009-05-05 | Applied Materials, Inc. | Optical proximity correction in raster scan printing based on corner matching templates |
JP4792460B2 (ja) * | 2005-03-17 | 2011-10-12 | 富士通株式会社 | シミュレーション装置,シミュレーション方法,シミュレーション用プログラムおよび同プログラムを記録したコンピュータ読取可能な記録媒体 |
US7498591B2 (en) * | 2005-09-30 | 2009-03-03 | Applied Materials, Inc. | Critical dimension effects correction in raster pattern generator |
US7476879B2 (en) * | 2005-09-30 | 2009-01-13 | Applied Materials, Inc. | Placement effects correction in raster pattern generator |
JP5148395B2 (ja) * | 2008-07-11 | 2013-02-20 | 株式会社東芝 | 潜像強度分布の評価システム、潜像強度分布の評価方法及び潜像強度分布の評価プログラム |
US20100054621A1 (en) * | 2008-08-26 | 2010-03-04 | Qualcomm Incorporated | Dual lookup table design for edge-directed image scaling |
EP2433295A2 (en) | 2009-05-20 | 2012-03-28 | Mapper Lithography IP B.V. | Dual pass scanning |
CN102460633B (zh) * | 2009-05-20 | 2014-12-17 | 迈普尔平版印刷Ip有限公司 | 用于光刻系统的图案数据转换器 |
WO2010134017A1 (en) * | 2009-05-20 | 2010-11-25 | Mapper Lithography Ip B.V. | Method of generating a two-level pattern for lithographic processing and pattern generator using the same |
JP5448586B2 (ja) * | 2009-06-05 | 2014-03-19 | キヤノン株式会社 | 光学素子の製造方法 |
WO2011046989A1 (en) * | 2009-10-12 | 2011-04-21 | Mentor Graphics Corporation | Generalization of shot definitions for mask and wafer patterning tools |
FR2994749B1 (fr) * | 2012-08-24 | 2015-07-24 | Commissariat Energie Atomique | Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants. |
JP6215586B2 (ja) | 2012-11-02 | 2017-10-18 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
JP6057672B2 (ja) * | 2012-11-05 | 2017-01-11 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2017126674A (ja) * | 2016-01-14 | 2017-07-20 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3573849A (en) | 1969-02-04 | 1971-04-06 | Bell Telephone Labor Inc | Pattern generating apparatus |
US3900737A (en) | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
US4213053A (en) | 1978-11-13 | 1980-07-15 | International Business Machines Corporation | Electron beam system with character projection capability |
US4243866A (en) | 1979-01-11 | 1981-01-06 | International Business Machines Corporation | Method and apparatus for forming a variable size electron beam |
US4494004A (en) * | 1980-11-28 | 1985-01-15 | International Business Machines Corporation | Electron beam system |
US4430571A (en) * | 1981-04-16 | 1984-02-07 | Control Data Corporation | Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system |
CS221592B1 (cs) | 1981-09-28 | 1983-04-29 | Armin Delong | Elektronově optický systém elektronového litografu |
CS219446B1 (cs) | 1981-09-28 | 1983-03-25 | Armin Delong | Projekční soustava elektronového litograřu |
US4469950A (en) | 1982-03-04 | 1984-09-04 | Varian Associates, Inc. | Charged particle beam exposure system utilizing variable line scan |
EP0166549A2 (en) | 1984-06-21 | 1986-01-02 | Varian Associates, Inc. | Method for proximity effect correction in electron beam lithography systems |
US4806921A (en) * | 1985-10-04 | 1989-02-21 | Ateq Corporation | Rasterizer for pattern generator |
JPS6394623A (ja) * | 1986-10-09 | 1988-04-25 | Hitachi Ltd | 描画装置 |
US4879605A (en) | 1988-02-29 | 1989-11-07 | Ateq Corporation | Rasterization system utilizing an overlay of bit-mapped low address resolution databases |
US5393987A (en) | 1993-05-28 | 1995-02-28 | Etec Systems, Inc. | Dose modulation and pixel deflection for raster scan lithography |
JPH10177589A (ja) | 1996-12-18 | 1998-06-30 | Mitsubishi Electric Corp | パターン比較検証装置、パターン比較検証方法およびパターン比較検証プログラムを記録した媒体 |
US5876902A (en) | 1997-01-28 | 1999-03-02 | Etec Systems, Inc. | Raster shaped beam writing strategy system and method for pattern generation |
US6011269A (en) * | 1998-04-10 | 2000-01-04 | Etec Systems, Inc. | Shaped shadow projection for an electron beam column |
-
1999
- 1999-01-06 US US09/226,926 patent/US6556702B1/en not_active Expired - Fee Related
-
2000
- 2000-01-04 EP EP00901387A patent/EP1060498B1/en not_active Expired - Lifetime
- 2000-01-04 WO PCT/US2000/000095 patent/WO2000041207A1/en active IP Right Grant
- 2000-01-04 KR KR10-2000-7009894A patent/KR100417906B1/ko not_active IP Right Cessation
- 2000-01-04 JP JP2000592852A patent/JP2002534792A/ja active Pending
- 2000-01-04 DE DE60023989T patent/DE60023989T2/de not_active Expired - Fee Related
- 2000-01-04 IL IL13810400A patent/IL138104A0/xx unknown
- 2000-01-04 CA CA002322972A patent/CA2322972A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100417906B1 (ko) | 2004-02-11 |
JP2002534792A (ja) | 2002-10-15 |
DE60023989D1 (de) | 2005-12-22 |
EP1060498A1 (en) | 2000-12-20 |
KR20010088282A (ko) | 2001-09-26 |
US6556702B1 (en) | 2003-04-29 |
DE60023989T2 (de) | 2006-07-27 |
WO2000041207A1 (en) | 2000-07-13 |
CA2322972A1 (en) | 2000-07-13 |
EP1060498B1 (en) | 2005-11-16 |
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