IL137280A - Insulated gate bipolar transistor for zero-voltage switching - Google Patents

Insulated gate bipolar transistor for zero-voltage switching

Info

Publication number
IL137280A
IL137280A IL13728099A IL13728099A IL137280A IL 137280 A IL137280 A IL 137280A IL 13728099 A IL13728099 A IL 13728099A IL 13728099 A IL13728099 A IL 13728099A IL 137280 A IL137280 A IL 137280A
Authority
IL
Israel
Prior art keywords
zero
bipolar transistor
insulated gate
gate bipolar
voltage switching
Prior art date
Application number
IL13728099A
Other languages
English (en)
Other versions
IL137280A0 (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IL137280A0 publication Critical patent/IL137280A0/xx
Publication of IL137280A publication Critical patent/IL137280A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IL13728099A 1998-12-04 1999-11-23 Insulated gate bipolar transistor for zero-voltage switching IL137280A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/205,310 US6239466B1 (en) 1998-12-04 1998-12-04 Insulated gate bipolar transistor for zero-voltage switching
PCT/US1999/027865 WO2000035022A1 (fr) 1998-12-04 1999-11-23 Transistor bipolaire a porte isolee pour commutation au zero de la tension

Publications (2)

Publication Number Publication Date
IL137280A0 IL137280A0 (en) 2001-07-24
IL137280A true IL137280A (en) 2003-07-31

Family

ID=22761680

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13728099A IL137280A (en) 1998-12-04 1999-11-23 Insulated gate bipolar transistor for zero-voltage switching

Country Status (6)

Country Link
US (1) US6239466B1 (fr)
EP (1) EP1051753A1 (fr)
JP (1) JP2002532886A (fr)
CN (1) CN1290404A (fr)
IL (1) IL137280A (fr)
WO (1) WO2000035022A1 (fr)

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US7028267B1 (en) * 1999-12-07 2006-04-11 Microsoft Corporation Method and apparatus for capturing and rendering text annotations for non-modifiable electronic content
US8314002B2 (en) * 2000-05-05 2012-11-20 International Rectifier Corporation Semiconductor device having increased switching speed
JP5025071B2 (ja) 2001-02-01 2012-09-12 三菱電機株式会社 半導体装置およびその製造方法
US6831329B2 (en) * 2001-10-26 2004-12-14 Fairchild Semiconductor Corporation Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off
US6784488B2 (en) * 2001-11-16 2004-08-31 Koninklijke Philips Electronics N.V. Trench-gate semiconductor devices and the manufacture thereof
US6855998B2 (en) * 2002-03-26 2005-02-15 Kabushiki Kaisha Toshiba Semiconductor device
DE10361136B4 (de) * 2003-12-23 2005-10-27 Infineon Technologies Ag Halbleiterdiode und IGBT
DE102005029263B4 (de) * 2005-06-23 2011-07-07 Infineon Technologies Austria Ag Halbleiterbauelement mit verbesserter dynamischer Belastbarkeit
DE102006016049B4 (de) * 2006-04-04 2016-12-15 Infineon Technologies Austria Ag Halbleiterbauelement, insbesondere Leistungshalbleiterbauelement mit Ladungsträgerrekombinationszonen und Verfahren zur Herstellung desselben
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (fr) * 2006-08-17 2017-10-11 Cree, Inc. Transistors bipolaires haute puissance à grille isolée
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
TWI404205B (zh) * 2009-10-06 2013-08-01 Anpec Electronics Corp 絕緣閘雙極電晶體與快速逆向恢復時間整流器之整合結構及其製作方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
CN102280474B (zh) * 2010-06-09 2014-02-19 尹海洲 一种igbt器件及其制造方法
CN102299150B (zh) * 2010-06-22 2013-06-12 茂达电子股份有限公司 具有可调输出电容值的功率半导体组件以及制作方法
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
EP2754177A1 (fr) 2011-09-11 2014-07-16 Cree, Inc. Module d'alimentation à haute densité de courant comprenant des transistors à topologie améliorée
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
JP6026767B2 (ja) * 2012-04-27 2016-11-16 三菱電機株式会社 半導体装置およびその製造方法
CN203339170U (zh) * 2013-04-26 2013-12-11 英飞凌科技股份有限公司 绝缘栅双极型晶体管
US9385181B2 (en) 2014-01-23 2016-07-05 Infineon Technologies Ag Semiconductor diode and method of manufacturing a semiconductor diode
CN104167356B (zh) * 2014-07-25 2017-04-19 浙江大学 绝缘栅双极型晶体管及其制备方法
JP6519649B2 (ja) * 2015-03-13 2019-05-29 三菱電機株式会社 半導体装置及びその製造方法
DE102015208097B4 (de) * 2015-04-30 2022-03-31 Infineon Technologies Ag Herstellen einer Halbleitervorrichtung durch Epitaxie
JP6780335B2 (ja) * 2016-07-15 2020-11-04 富士電機株式会社 逆阻止ｍｏｓ型半導体装置および逆阻止ｍｏｓ型半導体装置の製造方法
CN108288649B (zh) * 2018-02-10 2020-05-05 重庆大学 一种有两种载流子导电的超结功率mosfet
JP7537099B2 (ja) 2020-02-28 2024-08-21 富士電機株式会社 半導体装置
CN113764510B (zh) * 2021-07-30 2022-09-09 西安电子科技大学 一种低关断损耗的电子注入效应增强igbt器件

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US4587713A (en) 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4620211A (en) 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
JPS62298120A (ja) 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置およびその製造方法
JPS6490561A (en) 1987-09-30 1989-04-07 Mitsubishi Electric Corp Semiconductor device
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
JP3325752B2 (ja) 1995-12-11 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
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JPH10270451A (ja) * 1997-03-25 1998-10-09 Rohm Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
IL137280A0 (en) 2001-07-24
CN1290404A (zh) 2001-04-04
EP1051753A1 (fr) 2000-11-15
JP2002532886A (ja) 2002-10-02
WO2000035022A1 (fr) 2000-06-15
US6239466B1 (en) 2001-05-29

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