IL136758A0 - Silicon with structured oxygen doping, its production and use - Google Patents
Silicon with structured oxygen doping, its production and useInfo
- Publication number
- IL136758A0 IL136758A0 IL13675800A IL13675800A IL136758A0 IL 136758 A0 IL136758 A0 IL 136758A0 IL 13675800 A IL13675800 A IL 13675800A IL 13675800 A IL13675800 A IL 13675800A IL 136758 A0 IL136758 A0 IL 136758A0
- Authority
- IL
- Israel
- Prior art keywords
- silicon
- production
- oxygen doping
- structured oxygen
- structured
- Prior art date
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 title 1
- 239000001301 oxygen Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19927604A DE19927604A1 (de) | 1999-06-17 | 1999-06-17 | Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
Publications (1)
Publication Number | Publication Date |
---|---|
IL136758A0 true IL136758A0 (en) | 2001-06-14 |
Family
ID=7911521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13675800A IL136758A0 (en) | 1999-06-17 | 2000-06-14 | Silicon with structured oxygen doping, its production and use |
Country Status (11)
Country | Link |
---|---|
US (1) | US6294726B1 (xx) |
EP (1) | EP1061160A1 (xx) |
JP (1) | JP2001048518A (xx) |
KR (1) | KR20010066850A (xx) |
CN (1) | CN1278565A (xx) |
AU (1) | AU3937500A (xx) |
CA (1) | CA2311618A1 (xx) |
DE (1) | DE19927604A1 (xx) |
IL (1) | IL136758A0 (xx) |
NO (1) | NO20003125L (xx) |
NZ (1) | NZ505167A (xx) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057351A (ja) * | 2000-08-15 | 2002-02-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法および太陽電池セル |
WO2002016265A1 (en) | 2000-08-21 | 2002-02-28 | Astropower, Inc. | Method and apparatus for purifying silicon |
JP3855082B2 (ja) * | 2002-10-07 | 2006-12-06 | 国立大学法人東京農工大学 | 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池 |
NO322246B1 (no) * | 2004-12-27 | 2006-09-04 | Elkem Solar As | Fremgangsmate for fremstilling av rettet storknede silisiumingots |
WO2006093099A1 (ja) * | 2005-02-28 | 2006-09-08 | Kyocera Corporation | 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール |
WO2006101200A1 (ja) * | 2005-03-24 | 2006-09-28 | Kyocera Corporation | 光電変換素子とその製造方法、及びこれを用いた光電変換モジュール |
US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
US7824579B2 (en) * | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
TW200818327A (en) * | 2006-09-29 | 2008-04-16 | Sumco Techxiv Corp | Silicon wafer heat treatment method |
US7880204B2 (en) * | 2006-10-02 | 2011-02-01 | Massachusetts Institute Of Technology | System and method for providing a high frequency response silicon photodetector |
US8968467B2 (en) | 2007-06-27 | 2015-03-03 | Silicor Materials Inc. | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
AT505168B1 (de) | 2007-06-29 | 2008-11-15 | Span Gerhard Dipl Ing Dr | Thermoelektrisches element |
US8153456B2 (en) * | 2010-01-20 | 2012-04-10 | Varian Semiconductor Equipment Associates, Inc. | Bifacial solar cell using ion implantation |
DE102010001094A1 (de) * | 2010-01-21 | 2011-07-28 | Evonik Degussa GmbH, 45128 | Verfahren zur Entkohlung einer Siliciumschmelze |
WO2015167826A1 (en) * | 2014-04-30 | 2015-11-05 | 1366 Technologies, Inc. | Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions and such wafers |
JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8102102A (nl) * | 1981-04-29 | 1982-11-16 | Philips Nv | Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf. |
DE3419137A1 (de) | 1984-05-23 | 1985-11-28 | Bayer Ag, 5090 Leverkusen | Verfahren und vorrichtung zur herstellung von halbleiterfolien |
US5156978A (en) | 1988-11-15 | 1992-10-20 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5106763A (en) * | 1988-11-15 | 1992-04-21 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
DE4102484A1 (de) | 1991-01-29 | 1992-07-30 | Bayer Ag | Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben |
DE4105910A1 (de) | 1991-02-26 | 1992-08-27 | Bayer Ag | Verfahren zur herstellung von metallfolien sowie deren verwendung |
DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
-
1999
- 1999-06-17 DE DE19927604A patent/DE19927604A1/de not_active Withdrawn
-
2000
- 2000-06-05 EP EP00111086A patent/EP1061160A1/de not_active Withdrawn
- 2000-06-07 JP JP2000170973A patent/JP2001048518A/ja active Pending
- 2000-06-08 AU AU39375/00A patent/AU3937500A/en not_active Abandoned
- 2000-06-09 US US09/591,518 patent/US6294726B1/en not_active Expired - Lifetime
- 2000-06-14 IL IL13675800A patent/IL136758A0/xx unknown
- 2000-06-14 NZ NZ505167A patent/NZ505167A/en unknown
- 2000-06-14 CA CA002311618A patent/CA2311618A1/en not_active Abandoned
- 2000-06-16 NO NO20003125A patent/NO20003125L/no not_active Application Discontinuation
- 2000-06-16 CN CN00118627A patent/CN1278565A/zh active Pending
- 2000-06-16 KR KR1020000033141A patent/KR20010066850A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NZ505167A (en) | 2001-10-26 |
US6294726B1 (en) | 2001-09-25 |
CN1278565A (zh) | 2001-01-03 |
NO20003125D0 (no) | 2000-06-16 |
AU3937500A (en) | 2000-12-21 |
CA2311618A1 (en) | 2000-12-17 |
EP1061160A1 (de) | 2000-12-20 |
KR20010066850A (ko) | 2001-07-11 |
DE19927604A1 (de) | 2000-12-21 |
NO20003125L (no) | 2000-12-18 |
JP2001048518A (ja) | 2001-02-20 |
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