IL136703A0 - Device for imaging radiation - Google Patents

Device for imaging radiation

Info

Publication number
IL136703A0
IL136703A0 IL13670398A IL13670398A IL136703A0 IL 136703 A0 IL136703 A0 IL 136703A0 IL 13670398 A IL13670398 A IL 13670398A IL 13670398 A IL13670398 A IL 13670398A IL 136703 A0 IL136703 A0 IL 136703A0
Authority
IL
Israel
Prior art keywords
cell
array
image
cells
read out
Prior art date
Application number
IL13670398A
Other languages
English (en)
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9726768A external-priority patent/GB2332800B/en
Application filed by Simage Oy filed Critical Simage Oy
Publication of IL136703A0 publication Critical patent/IL136703A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)
  • Picture Signal Circuits (AREA)
IL13670398A 1997-12-18 1998-11-16 Device for imaging radiation IL136703A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9726768A GB2332800B (en) 1997-12-18 1997-12-18 Device for imaging radiation
GB9823403A GB2332586B (en) 1997-12-18 1998-10-26 Device for imaging radiation
PCT/EP1998/007524 WO1999033259A1 (en) 1997-12-18 1998-11-16 Device for imaging radiation

Publications (1)

Publication Number Publication Date
IL136703A0 true IL136703A0 (en) 2001-06-14

Family

ID=26312802

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13670398A IL136703A0 (en) 1997-12-18 1998-11-16 Device for imaging radiation

Country Status (8)

Country Link
US (1) US6252217B1 (de)
EP (1) EP1040650B1 (de)
JP (1) JP2001527342A (de)
AT (1) ATE202882T1 (de)
AU (1) AU2154099A (de)
DE (1) DE69801059T2 (de)
IL (1) IL136703A0 (de)
WO (1) WO1999033259A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239456B1 (en) 1998-08-19 2001-05-29 Photobit Corporation Lock in pinned photodiode photodetector
US6693670B1 (en) 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
WO2002003675A2 (en) 2000-07-05 2002-01-10 Vision - Sciences Inc. Dynamic range compression method
US6400798B1 (en) * 2000-08-01 2002-06-04 Ge Medical Systems Global Technology Company, Llc Simple means for measuring the offset induced by photo-conductive FETs in a solid state X-ray detector
WO2002043113A2 (en) * 2000-11-27 2002-05-30 Vision Sciences Inc. Noise floor reduction in image sensors
WO2002043366A2 (en) * 2000-11-27 2002-05-30 Vision Sciences Inc. Programmable resolution cmos image sensor
US6853402B2 (en) * 2001-01-30 2005-02-08 Xerox Corporation Combined multiplexing and offset correction for an image sensor array
US7088394B2 (en) * 2001-07-09 2006-08-08 Micron Technology, Inc. Charge mode active pixel sensor read-out circuit
DE10156627A1 (de) * 2001-11-17 2003-05-28 Philips Corp Intellectual Pty Anordnung mit elektrischen Elementen
US7081922B2 (en) * 2001-12-06 2006-07-25 Ray Mentzer Apparatus and method for obtaining average scene intensity information from a photo detector array
US7122802B2 (en) * 2002-04-19 2006-10-17 Ge Medical Systems Global Technology Company, Llc Method and apparatus for increasing the data acquisition rate in a digital detector
US7223981B1 (en) 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7019277B2 (en) * 2003-03-13 2006-03-28 Psion Teklogix Systems Inc. Imaging device
JP4071157B2 (ja) * 2003-05-27 2008-04-02 セイコーインスツル株式会社 イメージセンサー
US7847846B1 (en) * 2006-05-16 2010-12-07 University Of Rochester CMOS image sensor readout employing in-pixel transistor current sensing
WO2008142590A2 (en) * 2007-05-16 2008-11-27 Koninklijke Philips Electronics N.V. Virtual pet detector and quasi-pixelated readout scheme for pet
US8035716B2 (en) * 2008-06-13 2011-10-11 Omnivision Technologies, Inc. Wide aperture image sensor pixel
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell
JP5233828B2 (ja) 2009-05-11 2013-07-10 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US8629387B2 (en) * 2010-07-07 2014-01-14 Raytheon Company Multi-layer sensor chip assembly and method for imaging generating image data with a frame-sum mode and a time-delay integration mode
US11486741B2 (en) 2016-11-02 2022-11-01 Precilabs Sa Detector device, positioning code and position detecting method
GB2574619B (en) * 2018-06-12 2022-10-12 Res & Innovation Uk Image sensor
KR20220101694A (ko) * 2019-11-20 2022-07-19 기가조트 테크널러지 인코포레이티드 스케일러블 픽셀 크기 이미지센서

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2548498B1 (fr) 1983-06-28 1985-10-18 Thomson Csf Procede de correction du niveau en sortie d'un dispositif a transfert de charge et dispositif pour sa mise en oeuvre
JPS60169282A (ja) * 1984-02-13 1985-09-02 Seiko Epson Corp 固体撮像素子の出力信号処理回路
JPS60172A (ja) * 1984-05-30 1985-01-05 Hitachi Ltd 固体撮像装置
US4835404A (en) * 1986-09-19 1989-05-30 Canon Kabushiki Kaisha Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors
US5581301A (en) 1990-10-03 1996-12-03 Canon Kabushiki Kaisha Image processing apparatus with adjustable low-pass optical filter characteristics
JP3019632B2 (ja) * 1992-10-16 2000-03-13 カシオ計算機株式会社 フォトセンサシステム及びその駆動方法
DE69427759T2 (de) 1993-06-16 2002-05-23 Cambridge Imaging Ltd., Cambridge Bilderzeugungssystem
US5719626A (en) * 1994-12-16 1998-02-17 Nikon Corporation Solid-state image pickup device
JP3513996B2 (ja) * 1995-08-07 2004-03-31 株式会社ニコン 固体撮像装置

Also Published As

Publication number Publication date
DE69801059D1 (de) 2001-08-09
EP1040650B1 (de) 2001-07-04
WO1999033259A1 (en) 1999-07-01
EP1040650A1 (de) 2000-10-04
ATE202882T1 (de) 2001-07-15
JP2001527342A (ja) 2001-12-25
US6252217B1 (en) 2001-06-26
DE69801059T2 (de) 2001-10-18
AU2154099A (en) 1999-07-12

Similar Documents

Publication Publication Date Title
GB2332800B (en) Device for imaging radiation
IL136703A0 (en) Device for imaging radiation
AU1874699A (en) Device for imaging radiation
AU2930599A (en) Imaging device for imaging radiation
CN101346988B (zh) 用于数字放射线摄影检测器的事件检测
US20080135731A1 (en) Photoarray for Detecting Time-Dependent Image Data
US6121843A (en) Charge mode capacitor transimpedance amplifier
JPH05500891A (ja) 集積回路とその集積回路を用いたカメラ並びに該集積回路技術を用いて作製されたイメージセンサへの副次的な入射光線を検出する方法
CA2132629A1 (en) Image Cell, in Particular for an Imaging Chip
KR890015267A (ko) 다이나믹형 반도체기억장치
Mottin et al. Improved architecture of IRFPA readout circuits
EP0718889A3 (de) Photoelektrische Umwandlungsvorrichtung und Verfahren zu deren Herstellung
US5377138A (en) Semiconductor memory and data processing device
SU928405A1 (ru) Усилитель считывани дл интегрального запоминающего устройства
EP0810609A3 (de) Einzelelektron-Speicherzellenanordnung
KR950014256B1 (ko) 낮은 전원전압을 사용하는 반도체 메모리장치
US6891145B2 (en) Micro power micro-sized CMOS active pixel
TW332926B (en) Multi-bank memory device
Resta et al. A 4.3 μW 28nm-CMOS pixel front-end with switched inverter-based comparator
CN1072529A (zh) 数据传输电路
JPS6413110A (en) Phase difference detecting device
SU989583A1 (ru) Усилитель считывани дл запоминающего устройства на МДП-транзисторах
TURCHETTA et al. CMOS Active Pixel Sensors: Design For Scientific Applications
TW331039B (en) The low power precharge circuit of DRAM
JPS5760782A (en) Recording and reproducing device