ATE202882T1 - Vorrichtung zur strahlungsbildaufnahme - Google Patents

Vorrichtung zur strahlungsbildaufnahme

Info

Publication number
ATE202882T1
ATE202882T1 AT98965691T AT98965691T ATE202882T1 AT E202882 T1 ATE202882 T1 AT E202882T1 AT 98965691 T AT98965691 T AT 98965691T AT 98965691 T AT98965691 T AT 98965691T AT E202882 T1 ATE202882 T1 AT E202882T1
Authority
AT
Austria
Prior art keywords
cell
array
image
cells
read out
Prior art date
Application number
AT98965691T
Other languages
English (en)
Inventor
Konstantinos E Spartiotis
Jouni Ilari Pyyhtia
Marku Tapio Eraluoto
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9726768A external-priority patent/GB2332800B/en
Application filed by Simage Oy filed Critical Simage Oy
Application granted granted Critical
Publication of ATE202882T1 publication Critical patent/ATE202882T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected two-dimensional [2D] regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Measurement Of Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Picture Signal Circuits (AREA)
AT98965691T 1997-12-18 1998-11-16 Vorrichtung zur strahlungsbildaufnahme ATE202882T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9726768A GB2332800B (en) 1997-12-18 1997-12-18 Device for imaging radiation
GB9823403A GB2332586B (en) 1997-12-18 1998-10-26 Device for imaging radiation
PCT/EP1998/007524 WO1999033259A1 (en) 1997-12-18 1998-11-16 Device for imaging radiation

Publications (1)

Publication Number Publication Date
ATE202882T1 true ATE202882T1 (de) 2001-07-15

Family

ID=26312802

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98965691T ATE202882T1 (de) 1997-12-18 1998-11-16 Vorrichtung zur strahlungsbildaufnahme

Country Status (8)

Country Link
US (1) US6252217B1 (de)
EP (1) EP1040650B1 (de)
JP (1) JP2001527342A (de)
AT (1) ATE202882T1 (de)
AU (1) AU2154099A (de)
DE (1) DE69801059T2 (de)
IL (1) IL136703A0 (de)
WO (1) WO1999033259A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239456B1 (en) 1998-08-19 2001-05-29 Photobit Corporation Lock in pinned photodiode photodetector
US6693670B1 (en) 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
EP1303978A4 (de) 2000-07-05 2006-08-09 Vision Sciences Inc Verfahren zur komprimierung des dynamikbereiches
US6400798B1 (en) * 2000-08-01 2002-06-04 Ge Medical Systems Global Technology Company, Llc Simple means for measuring the offset induced by photo-conductive FETs in a solid state X-ray detector
EP1353791A4 (de) * 2000-11-27 2006-11-15 Vision Sciences Inc Verringerung des grundrauschens bei bildsensoren
WO2002043366A2 (en) * 2000-11-27 2002-05-30 Vision Sciences Inc. Programmable resolution cmos image sensor
US6853402B2 (en) * 2001-01-30 2005-02-08 Xerox Corporation Combined multiplexing and offset correction for an image sensor array
US7088394B2 (en) * 2001-07-09 2006-08-08 Micron Technology, Inc. Charge mode active pixel sensor read-out circuit
DE10156627A1 (de) * 2001-11-17 2003-05-28 Philips Corp Intellectual Pty Anordnung mit elektrischen Elementen
US7081922B2 (en) * 2001-12-06 2006-07-25 Ray Mentzer Apparatus and method for obtaining average scene intensity information from a photo detector array
US7122802B2 (en) * 2002-04-19 2006-10-17 Ge Medical Systems Global Technology Company, Llc Method and apparatus for increasing the data acquisition rate in a digital detector
US7223981B1 (en) 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7019277B2 (en) * 2003-03-13 2006-03-28 Psion Teklogix Systems Inc. Imaging device
JP4071157B2 (ja) * 2003-05-27 2008-04-02 セイコーインスツル株式会社 イメージセンサー
US7847846B1 (en) * 2006-05-16 2010-12-07 University Of Rochester CMOS image sensor readout employing in-pixel transistor current sensing
EP2162762B1 (de) * 2007-05-16 2016-06-08 Koninklijke Philips N.V. Virtueller pet-detektor und quasi-gepixeltes ableseschema für pet
US8035716B2 (en) * 2008-06-13 2011-10-11 Omnivision Technologies, Inc. Wide aperture image sensor pixel
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell
JP5233828B2 (ja) * 2009-05-11 2013-07-10 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US8629387B2 (en) * 2010-07-07 2014-01-14 Raytheon Company Multi-layer sensor chip assembly and method for imaging generating image data with a frame-sum mode and a time-delay integration mode
CN109891196B (zh) * 2016-11-02 2022-02-01 普莱希莱布斯股份有限公司 检测器设备、定位代码和位置检测方法
GB2574619B (en) * 2018-06-12 2022-10-12 Res & Innovation Uk Image sensor
KR102902358B1 (ko) * 2019-11-20 2025-12-22 기가조트 테크널러지 인코포레이티드 스케일러블 픽셀 크기 이미지센서

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2548498B1 (fr) 1983-06-28 1985-10-18 Thomson Csf Procede de correction du niveau en sortie d'un dispositif a transfert de charge et dispositif pour sa mise en oeuvre
JPS60169282A (ja) * 1984-02-13 1985-09-02 Seiko Epson Corp 固体撮像素子の出力信号処理回路
JPS60172A (ja) * 1984-05-30 1985-01-05 Hitachi Ltd 固体撮像装置
US4835404A (en) * 1986-09-19 1989-05-30 Canon Kabushiki Kaisha Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors
US5581301A (en) 1990-10-03 1996-12-03 Canon Kabushiki Kaisha Image processing apparatus with adjustable low-pass optical filter characteristics
JP3019632B2 (ja) * 1992-10-16 2000-03-13 カシオ計算機株式会社 フォトセンサシステム及びその駆動方法
WO1994030004A1 (en) 1993-06-16 1994-12-22 Cambridge Imaging Limited Improved imaging system
JP3513996B2 (ja) * 1995-08-07 2004-03-31 株式会社ニコン 固体撮像装置
US5719626A (en) * 1994-12-16 1998-02-17 Nikon Corporation Solid-state image pickup device

Also Published As

Publication number Publication date
DE69801059D1 (de) 2001-08-09
JP2001527342A (ja) 2001-12-25
EP1040650B1 (de) 2001-07-04
IL136703A0 (en) 2001-06-14
AU2154099A (en) 1999-07-12
EP1040650A1 (de) 2000-10-04
DE69801059T2 (de) 2001-10-18
WO1999033259A1 (en) 1999-07-01
US6252217B1 (en) 2001-06-26

Similar Documents

Publication Publication Date Title
ATE213374T1 (de) Vorrichtung zur strahlungsbildaufnahme
ATE202882T1 (de) Vorrichtung zur strahlungsbildaufnahme
ATE221287T1 (de) Vorrichtung zur strahlungsbildaufnahme
US6529241B1 (en) Photodetecting device supporting saturation detection and electronic shutter
ATE252804T1 (de) Bildaufnahmegerät zur bildaufnahme von strahlung
US6121843A (en) Charge mode capacitor transimpedance amplifier
ATE101747T1 (de) Datenerfassungssystem.
US20060170491A1 (en) Optoelectronic sensor
US20080204567A1 (en) Sample and hold circuits with buffer offset removed
US5377138A (en) Semiconductor memory and data processing device
CN114137191A (zh) 用于细胞生化信号检测和调控的多功能电极阵列系统
Blanquart et al. XPAD, a new read-out pixel chip for X-ray counting
LaMarr et al. Charge transfer efficiency of CCDs with a single-polysilicon gate structure
US6297492B1 (en) Fast BICMOS active-pixel sensor cell with fast NPN emitter-follower readout
EP0061271B1 (de) Dynamische MOS-Speicheranordnung
EP0822558A3 (de) Nichtflüchtige Halbleiterspeicheranordnung mit hoher Geschwindigkeit und niedrigem Verbrauch
EP0366332A3 (de) Digitales Speichersystem
EP0884733A3 (de) Leseverstärker mit selbstgetaktete Vorladung für einen Matrixspeicher
JP3714688B2 (ja) 制御フィードバック型電荷／電圧変換器
Tartagni et al. A photodiode cell for applications to position and motion estimation sensors
TURCHETTA et al. Cmos active pixel sensors: design for scientific applications
JPH04326849A (ja) イメージセンサ
JPS55142486A (en) Ccd memory
JPH0766662B2 (ja) 半導体記憶装置
JPS57182857A (en) Program trace accumulating and recording system

Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee