IL124691A - Infrared radiation detector having a reduced active area - Google Patents
Infrared radiation detector having a reduced active areaInfo
- Publication number
- IL124691A IL124691A IL12469196A IL12469196A IL124691A IL 124691 A IL124691 A IL 124691A IL 12469196 A IL12469196 A IL 12469196A IL 12469196 A IL12469196 A IL 12469196A IL 124691 A IL124691 A IL 124691A
- Authority
- IL
- Israel
- Prior art keywords
- microbridge
- active area
- detector
- semiconductor substrate
- area
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 42
- 230000002829 reductive effect Effects 0.000 title description 24
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 238000003384 imaging method Methods 0.000 claims description 60
- 238000010521 absorption reaction Methods 0.000 claims description 36
- 230000035945 sensitivity Effects 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 239000012141 concentrate Substances 0.000 claims description 8
- 239000011358 absorbing material Substances 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 118
- 239000002184 metal Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 22
- 230000008901 benefit Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000005670 electromagnetic radiation Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000000779 smoke Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 239000002195 soluble material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/026—Control of working procedures of a pyrometer, other than calibration; Bandwidth calculation; Gain control
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0815—Light concentrators, collectors or condensers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/085—Optical arrangements having a through-hole enabling the optical elements to fulfil an additional optical function, e.g. mirrors or gratings having a through-hole for a light collecting or light injecting optical fiber
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0859—Sighting arrangements, e.g. cameras
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
- H04N23/23—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from thermal infrared radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US790995P | 1995-12-04 | 1995-12-04 | |
PCT/US1996/019261 WO1997021250A1 (fr) | 1995-12-04 | 1996-12-04 | Detecteur de rayonnement infrarouge, possedant une zone active limitee |
Publications (2)
Publication Number | Publication Date |
---|---|
IL124691A0 IL124691A0 (en) | 1998-12-06 |
IL124691A true IL124691A (en) | 2001-06-14 |
Family
ID=21728755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL12469196A IL124691A (en) | 1995-12-04 | 1996-12-04 | Infrared radiation detector having a reduced active area |
Country Status (7)
Country | Link |
---|---|
US (1) | US5760398A (fr) |
EP (1) | EP0865672B1 (fr) |
JP (1) | JP4091979B2 (fr) |
AU (1) | AU1408497A (fr) |
DE (1) | DE69610118T2 (fr) |
IL (1) | IL124691A (fr) |
WO (1) | WO1997021250A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7495220B2 (en) | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
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US6515285B1 (en) * | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
WO1997018589A1 (fr) * | 1995-11-15 | 1997-05-22 | Lockheed-Martin Ir Imaging Systems, Inc. | Detecteur a micropont multiniveaux a deux voies |
US6271802B1 (en) * | 1997-04-14 | 2001-08-07 | Mems Optical, Inc. | Three dimensional micromachined electromagnetic device and associated methods |
US6459084B1 (en) | 1997-05-30 | 2002-10-01 | University Of Central Florida | Area receiver with antenna-coupled infrared sensors |
JP3529596B2 (ja) * | 1997-08-06 | 2004-05-24 | 株式会社東芝 | 赤外線固体撮像装置及びその製造方法 |
US6144030A (en) * | 1997-10-28 | 2000-11-07 | Raytheon Company | Advanced small pixel high fill factor uncooled focal plane array |
GB2335077B (en) * | 1998-03-04 | 2003-05-28 | Marconi Gec Ltd | Radiation detectors |
WO2000012986A1 (fr) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometre avec couche reflechissante |
WO2000012984A1 (fr) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometre dote d'un element d'equilibrage des contraintes en forme de serpentin |
WO2000012985A1 (fr) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometre comprenant un absorbeur realise dans un materiau a faible temperature de depot et a faible conductivite thermique |
FR2788129B1 (fr) * | 1998-12-30 | 2001-02-16 | Commissariat Energie Atomique | Detecteur bolometrique a antenne |
GB2353428A (en) * | 1999-08-20 | 2001-02-21 | Bayerische Motoren Werke Ag | Monitoring system for a vehicle |
JP2001264441A (ja) * | 2000-01-14 | 2001-09-26 | Seiko Instruments Inc | カロリーメーターとその製造方法 |
US6900440B2 (en) * | 2000-02-24 | 2005-05-31 | University Of Virginia Patent Foundation | High sensitivity infrared sensing apparatus and related method thereof |
US6690014B1 (en) | 2000-04-25 | 2004-02-10 | Raytheon Company | Microbolometer and method for forming |
JP4795610B2 (ja) | 2000-05-01 | 2011-10-19 | ビーエイイー・システムズ・インフォメーション・アンド・エレクトロニック・システムズ・インテグレイション・インコーポレーテッド | 放射センサの温度変動を補償するための方法および装置 |
JP4612932B2 (ja) * | 2000-06-01 | 2011-01-12 | ホーチキ株式会社 | 赤外線検出素子および赤外線2次元イメージセンサ |
JP3415817B2 (ja) * | 2000-08-28 | 2003-06-09 | アーベル・システムズ株式会社 | 太陽電池 |
US6777681B1 (en) | 2001-04-25 | 2004-08-17 | Raytheon Company | Infrared detector with amorphous silicon detector elements, and a method of making it |
US6476392B1 (en) * | 2001-05-11 | 2002-11-05 | Irvine Sensors Corporation | Method and apparatus for temperature compensation of an uncooled focal plane array |
US7049597B2 (en) * | 2001-12-21 | 2006-05-23 | Andrew Bodkin | Multi-mode optical imager |
US8174694B2 (en) * | 2001-12-21 | 2012-05-08 | Bodkin Design And Engineering Llc | Hyperspectral imaging systems |
US20060072109A1 (en) * | 2004-09-03 | 2006-04-06 | Andrew Bodkin | Hyperspectral imaging systems |
US7796316B2 (en) | 2001-12-21 | 2010-09-14 | Bodkin Design And Engineering Llc | Micro-optic shutter |
US6815659B2 (en) * | 2002-01-14 | 2004-11-09 | Palantyr Research, Llc | Optical system and method of making same |
JP2004062938A (ja) * | 2002-07-25 | 2004-02-26 | Pioneer Electronic Corp | 球面収差補正装置及び球面収差補正方法 |
US6689628B1 (en) | 2002-08-15 | 2004-02-10 | Bae Systems Information And Electronic Systems Integration Inc. | Method for dense pixel fabrication |
JP3944465B2 (ja) | 2003-04-11 | 2007-07-11 | 三菱電機株式会社 | 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ |
US7013570B2 (en) * | 2003-06-18 | 2006-03-21 | Irwin-Industrial Tool Company | Stud finder |
US7030378B2 (en) * | 2003-08-05 | 2006-04-18 | Bae Systems Information And Electronic Systems Integration, Inc. | Real-time radiation sensor calibration |
US6974219B1 (en) | 2004-07-09 | 2005-12-13 | Bae Systems Information And Electronic Systems Integration Inc | Zero reflectance design for tilted devices |
FR2883417B1 (fr) * | 2005-03-16 | 2007-05-11 | Ulis Soc Par Actions Simplifie | Detecteur bolometrique, dispositif de detection infrarouge mettant en oeuvre un tel detecteur et procede de fabrication de ce detecteur |
FR2884608B1 (fr) * | 2005-04-18 | 2007-05-25 | Commissariat Energie Atomique | Detecteur bolometrique, dispositif de detection d'ondes electromagnetiques submillimetriques et millimetriques mettant en oeuvre un tel detecteur |
DE102005018965B3 (de) * | 2005-04-23 | 2006-10-12 | HAWK Hochschule für angewandte Wissenschaft und Kunst | Bildwandler mit einer beheizbaren Wandlerschicht |
US7439513B2 (en) * | 2005-08-16 | 2008-10-21 | Institut National D'optique | Fast microbolometer pixels with integrated micro-optical focusing elements |
US7459686B2 (en) * | 2006-01-26 | 2008-12-02 | L-3 Communications Corporation | Systems and methods for integrating focal plane arrays |
US7655909B2 (en) * | 2006-01-26 | 2010-02-02 | L-3 Communications Corporation | Infrared detector elements and methods of forming same |
US7462831B2 (en) * | 2006-01-26 | 2008-12-09 | L-3 Communications Corporation | Systems and methods for bonding |
US7718965B1 (en) | 2006-08-03 | 2010-05-18 | L-3 Communications Corporation | Microbolometer infrared detector elements and methods for forming same |
US8153980B1 (en) | 2006-11-30 | 2012-04-10 | L-3 Communications Corp. | Color correction for radiation detectors |
DE102008005167A1 (de) | 2008-01-19 | 2009-07-23 | Testo Ag | Wärmebildkamera |
US8063370B2 (en) * | 2009-01-16 | 2011-11-22 | Hanvision Co., Ltd. | Semiconductor device and method of manufacturing the same |
DE102009032486A1 (de) * | 2009-07-09 | 2011-01-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US8546757B2 (en) * | 2010-04-28 | 2013-10-01 | L-3 Communications Corporation | Pixel structure for microbolometer detector |
US9568367B2 (en) * | 2010-05-30 | 2017-02-14 | Technion Research And Development Foundation Ltd. | Sensing device having a thermal antenna and a method for sensing electromagnetic radiation |
DE102010027679A1 (de) | 2010-07-20 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP5644257B2 (ja) * | 2010-08-20 | 2014-12-24 | Tdk株式会社 | 温度センサ |
US8808888B2 (en) | 2010-08-25 | 2014-08-19 | Applied Materials, Inc. | Flow battery systems |
US8765514B1 (en) | 2010-11-12 | 2014-07-01 | L-3 Communications Corp. | Transitioned film growth for conductive semiconductor materials |
JP5706174B2 (ja) * | 2011-01-26 | 2015-04-22 | 三菱電機株式会社 | 赤外線センサおよび赤外線センサアレイ |
FR2977937B1 (fr) | 2011-07-15 | 2013-08-16 | Centre Nat Rech Scient | Detecteur bolometrique a performances ameliorees |
CN102931201A (zh) * | 2011-08-11 | 2013-02-13 | 中国科学院微电子研究所 | 基于红外焦平面阵列的聚能微镜阵列及其制作方法 |
EP2581721B1 (fr) * | 2011-10-10 | 2019-05-08 | Samsung Electronics Co., Ltd | Détecteur thermique infrarouge et son procédé de fabrication |
KR101850520B1 (ko) * | 2011-10-10 | 2018-04-19 | 삼성전자주식회사 | 적외선 열상 감지기 및 그 제조 방법 |
US9606016B2 (en) | 2012-12-31 | 2017-03-28 | Flir Systems, Inc. | Devices and methods for determining vacuum pressure levels |
US10677656B2 (en) | 2012-12-31 | 2020-06-09 | Flir Systems, Inc. | Devices and methods for infrared reference pixels |
JP2014235146A (ja) * | 2013-06-05 | 2014-12-15 | セイコーエプソン株式会社 | テラヘルツ波検出装置、カメラ、イメージング装置および計測装置 |
FR3016997B1 (fr) * | 2014-01-30 | 2016-03-04 | Commissariat Energie Atomique | Detecteur de rayonnement photonique comportant un reseau d'antennes et un support resistif en spirale |
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-
1996
- 1996-12-04 DE DE69610118T patent/DE69610118T2/de not_active Expired - Lifetime
- 1996-12-04 EP EP96944222A patent/EP0865672B1/fr not_active Expired - Lifetime
- 1996-12-04 JP JP52137897A patent/JP4091979B2/ja not_active Expired - Lifetime
- 1996-12-04 US US08/760,240 patent/US5760398A/en not_active Expired - Lifetime
- 1996-12-04 WO PCT/US1996/019261 patent/WO1997021250A1/fr active IP Right Grant
- 1996-12-04 AU AU14084/97A patent/AU1408497A/en not_active Abandoned
- 1996-12-04 IL IL12469196A patent/IL124691A/en not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
JP4091979B2 (ja) | 2008-05-28 |
JP2000501832A (ja) | 2000-02-15 |
EP0865672B1 (fr) | 2000-08-30 |
WO1997021250A1 (fr) | 1997-06-12 |
IL124691A0 (en) | 1998-12-06 |
DE69610118D1 (de) | 2000-10-05 |
EP0865672A1 (fr) | 1998-09-23 |
US5760398A (en) | 1998-06-02 |
AU1408497A (en) | 1997-06-27 |
DE69610118T2 (de) | 2001-02-01 |
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