DE69610118D1 - Infrarot-strahlungsdetektor mit verkleinerter wirksamer fläche - Google Patents
Infrarot-strahlungsdetektor mit verkleinerter wirksamer flächeInfo
- Publication number
- DE69610118D1 DE69610118D1 DE69610118T DE69610118T DE69610118D1 DE 69610118 D1 DE69610118 D1 DE 69610118D1 DE 69610118 T DE69610118 T DE 69610118T DE 69610118 T DE69610118 T DE 69610118T DE 69610118 D1 DE69610118 D1 DE 69610118D1
- Authority
- DE
- Germany
- Prior art keywords
- infrared radiation
- radiation detector
- effective surface
- reduced effective
- reduced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/026—Control of working procedures of a pyrometer, other than calibration; Bandwidth calculation; Gain control
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0815—Light concentrators, collectors or condensers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/085—Optical arrangements having a through-hole enabling the optical elements to fulfil an additional optical function, e.g. mirrors or gratings having a through-hole for a light collecting or light injecting optical fiber
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0859—Sighting arrangements, e.g. cameras
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US790995P | 1995-12-04 | 1995-12-04 | |
PCT/US1996/019261 WO1997021250A1 (en) | 1995-12-04 | 1996-12-04 | Infrared radiation detector having a reduced active area |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69610118D1 true DE69610118D1 (de) | 2000-10-05 |
DE69610118T2 DE69610118T2 (de) | 2001-02-01 |
Family
ID=21728755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69610118T Expired - Lifetime DE69610118T2 (de) | 1995-12-04 | 1996-12-04 | Infrarot-strahlungsdetektor mit verkleinerter wirksamer fläche |
Country Status (7)
Country | Link |
---|---|
US (1) | US5760398A (de) |
EP (1) | EP0865672B1 (de) |
JP (1) | JP4091979B2 (de) |
AU (1) | AU1408497A (de) |
DE (1) | DE69610118T2 (de) |
IL (1) | IL124691A (de) |
WO (1) | WO1997021250A1 (de) |
Families Citing this family (62)
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US6515285B1 (en) * | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
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WO1997018589A1 (en) * | 1995-11-15 | 1997-05-22 | Lockheed-Martin Ir Imaging Systems, Inc. | A dual-band multi-level microbridge detector |
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US6459084B1 (en) | 1997-05-30 | 2002-10-01 | University Of Central Florida | Area receiver with antenna-coupled infrared sensors |
JP3529596B2 (ja) * | 1997-08-06 | 2004-05-24 | 株式会社東芝 | 赤外線固体撮像装置及びその製造方法 |
US6144030A (en) * | 1997-10-28 | 2000-11-07 | Raytheon Company | Advanced small pixel high fill factor uncooled focal plane array |
GB2335077B (en) * | 1998-03-04 | 2003-05-28 | Marconi Gec Ltd | Radiation detectors |
WO2000012985A1 (en) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometer including an absorber made of a material having a low deposition-temperature and a low heat-conductivity |
WO2000012986A1 (en) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometer including a reflective layer |
WO2000012984A1 (en) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometer with a serpentine stress balancing member |
FR2788129B1 (fr) * | 1998-12-30 | 2001-02-16 | Commissariat Energie Atomique | Detecteur bolometrique a antenne |
GB2353428A (en) * | 1999-08-20 | 2001-02-21 | Bayerische Motoren Werke Ag | Monitoring system for a vehicle |
JP2001264441A (ja) * | 2000-01-14 | 2001-09-26 | Seiko Instruments Inc | カロリーメーターとその製造方法 |
AU2001262915A1 (en) * | 2000-02-24 | 2001-09-03 | University Of Virginia Patent Foundation | High sensitivity infrared sensing apparatus and related method thereof |
US6690014B1 (en) | 2000-04-25 | 2004-02-10 | Raytheon Company | Microbolometer and method for forming |
WO2001084118A2 (en) | 2000-05-01 | 2001-11-08 | Bae Systems Information And Electronic Systems Integration Inc. | Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor |
JP4612932B2 (ja) * | 2000-06-01 | 2011-01-12 | ホーチキ株式会社 | 赤外線検出素子および赤外線2次元イメージセンサ |
JP3415817B2 (ja) * | 2000-08-28 | 2003-06-09 | アーベル・システムズ株式会社 | 太陽電池 |
US6777681B1 (en) | 2001-04-25 | 2004-08-17 | Raytheon Company | Infrared detector with amorphous silicon detector elements, and a method of making it |
US6476392B1 (en) * | 2001-05-11 | 2002-11-05 | Irvine Sensors Corporation | Method and apparatus for temperature compensation of an uncooled focal plane array |
US7796316B2 (en) | 2001-12-21 | 2010-09-14 | Bodkin Design And Engineering Llc | Micro-optic shutter |
US8174694B2 (en) * | 2001-12-21 | 2012-05-08 | Bodkin Design And Engineering Llc | Hyperspectral imaging systems |
US20060072109A1 (en) * | 2004-09-03 | 2006-04-06 | Andrew Bodkin | Hyperspectral imaging systems |
US7049597B2 (en) * | 2001-12-21 | 2006-05-23 | Andrew Bodkin | Multi-mode optical imager |
US6815659B2 (en) * | 2002-01-14 | 2004-11-09 | Palantyr Research, Llc | Optical system and method of making same |
JP2004062938A (ja) * | 2002-07-25 | 2004-02-26 | Pioneer Electronic Corp | 球面収差補正装置及び球面収差補正方法 |
US6689628B1 (en) | 2002-08-15 | 2004-02-10 | Bae Systems Information And Electronic Systems Integration Inc. | Method for dense pixel fabrication |
JP3944465B2 (ja) | 2003-04-11 | 2007-07-11 | 三菱電機株式会社 | 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ |
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FR2883417B1 (fr) * | 2005-03-16 | 2007-05-11 | Ulis Soc Par Actions Simplifie | Detecteur bolometrique, dispositif de detection infrarouge mettant en oeuvre un tel detecteur et procede de fabrication de ce detecteur |
FR2884608B1 (fr) * | 2005-04-18 | 2007-05-25 | Commissariat Energie Atomique | Detecteur bolometrique, dispositif de detection d'ondes electromagnetiques submillimetriques et millimetriques mettant en oeuvre un tel detecteur |
DE102005018965B3 (de) * | 2005-04-23 | 2006-10-12 | HAWK Hochschule für angewandte Wissenschaft und Kunst | Bildwandler mit einer beheizbaren Wandlerschicht |
US7439513B2 (en) * | 2005-08-16 | 2008-10-21 | Institut National D'optique | Fast microbolometer pixels with integrated micro-optical focusing elements |
US7655909B2 (en) * | 2006-01-26 | 2010-02-02 | L-3 Communications Corporation | Infrared detector elements and methods of forming same |
US7459686B2 (en) * | 2006-01-26 | 2008-12-02 | L-3 Communications Corporation | Systems and methods for integrating focal plane arrays |
US7462831B2 (en) * | 2006-01-26 | 2008-12-09 | L-3 Communications Corporation | Systems and methods for bonding |
US7718965B1 (en) | 2006-08-03 | 2010-05-18 | L-3 Communications Corporation | Microbolometer infrared detector elements and methods for forming same |
US8153980B1 (en) | 2006-11-30 | 2012-04-10 | L-3 Communications Corp. | Color correction for radiation detectors |
DE102008005167A1 (de) | 2008-01-19 | 2009-07-23 | Testo Ag | Wärmebildkamera |
US8063370B2 (en) * | 2009-01-16 | 2011-11-22 | Hanvision Co., Ltd. | Semiconductor device and method of manufacturing the same |
DE102009032486A1 (de) * | 2009-07-09 | 2011-01-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US8546757B2 (en) * | 2010-04-28 | 2013-10-01 | L-3 Communications Corporation | Pixel structure for microbolometer detector |
US9568367B2 (en) * | 2010-05-30 | 2017-02-14 | Technion Research And Development Foundation Ltd. | Sensing device having a thermal antenna and a method for sensing electromagnetic radiation |
DE102010027679A1 (de) | 2010-07-20 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP5644257B2 (ja) * | 2010-08-20 | 2014-12-24 | Tdk株式会社 | 温度センサ |
US8808888B2 (en) | 2010-08-25 | 2014-08-19 | Applied Materials, Inc. | Flow battery systems |
US8765514B1 (en) | 2010-11-12 | 2014-07-01 | L-3 Communications Corp. | Transitioned film growth for conductive semiconductor materials |
JP5706174B2 (ja) * | 2011-01-26 | 2015-04-22 | 三菱電機株式会社 | 赤外線センサおよび赤外線センサアレイ |
FR2977937B1 (fr) | 2011-07-15 | 2013-08-16 | Centre Nat Rech Scient | Detecteur bolometrique a performances ameliorees |
CN102931201A (zh) * | 2011-08-11 | 2013-02-13 | 中国科学院微电子研究所 | 基于红外焦平面阵列的聚能微镜阵列及其制作方法 |
KR101850520B1 (ko) * | 2011-10-10 | 2018-04-19 | 삼성전자주식회사 | 적외선 열상 감지기 및 그 제조 방법 |
EP2581721B1 (de) * | 2011-10-10 | 2019-05-08 | Samsung Electronics Co., Ltd | Infrarotwärmedetektor und Herstellungsverfahren dafür |
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US10677656B2 (en) | 2012-12-31 | 2020-06-09 | Flir Systems, Inc. | Devices and methods for infrared reference pixels |
JP2014235146A (ja) * | 2013-06-05 | 2014-12-15 | セイコーエプソン株式会社 | テラヘルツ波検出装置、カメラ、イメージング装置および計測装置 |
FR3016997B1 (fr) | 2014-01-30 | 2016-03-04 | Commissariat Energie Atomique | Detecteur de rayonnement photonique comportant un reseau d'antennes et un support resistif en spirale |
KR101570445B1 (ko) * | 2014-02-27 | 2015-11-20 | 한국과학기술원 | 적외선 검출기 |
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CN114616445A (zh) * | 2020-12-30 | 2022-06-10 | 深圳市大疆创新科技有限公司 | 基于热辐射探测器的测温方法、装置及热辐射探测器 |
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US5626773A (en) * | 1995-01-03 | 1997-05-06 | Texas Instruments Incorporated | Structure and method including dry etching techniques for forming an array of thermal sensitive elements |
US5603848A (en) * | 1995-01-03 | 1997-02-18 | Texas Instruments Incorporated | Method for etching through a substrate to an attached coating |
US5572060A (en) * | 1995-02-01 | 1996-11-05 | Southern Methodist University | Uncooled YBaCuO thin film infrared detector |
US5627082A (en) * | 1995-03-29 | 1997-05-06 | Texas Instruments Incorporated | High thermal resistance backfill material for hybrid UFPA's |
JP3287173B2 (ja) * | 1995-04-07 | 2002-05-27 | 三菱電機株式会社 | 赤外線検出素子 |
US5602393A (en) * | 1995-06-07 | 1997-02-11 | Hughes Aircraft Company | Microbolometer detector element with enhanced sensitivity |
-
1996
- 1996-12-04 US US08/760,240 patent/US5760398A/en not_active Expired - Lifetime
- 1996-12-04 IL IL12469196A patent/IL124691A/en not_active IP Right Cessation
- 1996-12-04 JP JP52137897A patent/JP4091979B2/ja not_active Expired - Lifetime
- 1996-12-04 WO PCT/US1996/019261 patent/WO1997021250A1/en active IP Right Grant
- 1996-12-04 EP EP96944222A patent/EP0865672B1/de not_active Expired - Lifetime
- 1996-12-04 AU AU14084/97A patent/AU1408497A/en not_active Abandoned
- 1996-12-04 DE DE69610118T patent/DE69610118T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69610118T2 (de) | 2001-02-01 |
IL124691A0 (en) | 1998-12-06 |
JP2000501832A (ja) | 2000-02-15 |
EP0865672B1 (de) | 2000-08-30 |
EP0865672A1 (de) | 1998-09-23 |
JP4091979B2 (ja) | 2008-05-28 |
IL124691A (en) | 2001-06-14 |
WO1997021250A1 (en) | 1997-06-12 |
AU1408497A (en) | 1997-06-27 |
US5760398A (en) | 1998-06-02 |
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