IL104663A - שיטה והתקן להסרת נזק תת שטחי בחומרים מוליכים למחצה ע" י חריטה פלסמטית - Google Patents

שיטה והתקן להסרת נזק תת שטחי בחומרים מוליכים למחצה ע" י חריטה פלסמטית

Info

Publication number
IL104663A
IL104663A IL10466393A IL10466393A IL104663A IL 104663 A IL104663 A IL 104663A IL 10466393 A IL10466393 A IL 10466393A IL 10466393 A IL10466393 A IL 10466393A IL 104663 A IL104663 A IL 104663A
Authority
IL
Israel
Prior art keywords
plasma
plasma chamber
substrate
material removal
removal tool
Prior art date
Application number
IL10466393A
Other languages
English (en)
Other versions
IL104663A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL104663A0 publication Critical patent/IL104663A0/xx
Publication of IL104663A publication Critical patent/IL104663A/he

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
IL10466393A 1992-02-27 1993-02-09 שיטה והתקן להסרת נזק תת שטחי בחומרים מוליכים למחצה ע" י חריטה פלסמטית IL104663A (he)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/842,828 US5238532A (en) 1992-02-27 1992-02-27 Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching

Publications (2)

Publication Number Publication Date
IL104663A0 IL104663A0 (en) 1993-06-10
IL104663A true IL104663A (he) 1996-05-14

Family

ID=25288337

Family Applications (1)

Application Number Title Priority Date Filing Date
IL10466393A IL104663A (he) 1992-02-27 1993-02-09 שיטה והתקן להסרת נזק תת שטחי בחומרים מוליכים למחצה ע" י חריטה פלסמטית

Country Status (6)

Country Link
US (1) US5238532A (he)
EP (1) EP0558238B1 (he)
JP (1) JP2565635B2 (he)
DE (1) DE69301942T2 (he)
IL (1) IL104663A (he)
NO (1) NO930680L (he)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
EP0668614A3 (en) * 1994-02-18 1996-03-27 Hughes Aircraft Co Method for improving the variation of the thickness of a wafer.
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6165375A (en) 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6139678A (en) 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
JP4169854B2 (ja) * 1999-02-12 2008-10-22 スピードファム株式会社 ウエハ平坦化方法
US6287976B1 (en) 1999-05-19 2001-09-11 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6338805B1 (en) 1999-07-14 2002-01-15 Memc Electronic Materials, Inc. Process for fabricating semiconductor wafers with external gettering
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
JP2001107272A (ja) * 1999-10-08 2001-04-17 Hitachi Ltd 試料の処理方法および処理装置並びに磁気ヘッドの製作方法
JP2003532349A (ja) 2000-05-02 2003-10-28 エピオン コーポレイション Ｇｃｉｂ処理によるデバイス特性の調整システム及び方法
US6749764B1 (en) 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6896949B1 (en) 2001-03-15 2005-05-24 Bookham (Us) Inc. Wafer scale production of optical elements
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
DE10239083B4 (de) * 2002-08-26 2009-09-03 Schott Ag Vorrichtung zum Versorgen einer Prozesskammer mit fluiden Medien und deren Verwendung
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
KR20080105617A (ko) * 2007-05-31 2008-12-04 삼성모바일디스플레이주식회사 화학기상증착장치 및 플라즈마강화 화학기상증착장치
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
JP5075793B2 (ja) * 2008-11-06 2012-11-21 東京エレクトロン株式会社 可動ガス導入構造物及び基板処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP7008918B2 (ja) * 2016-05-29 2022-01-25 東京エレクトロン株式会社 選択的窒化シリコンエッチングの方法
WO2018234611A1 (en) * 2017-06-21 2018-12-27 Picosun Oy APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943047A (en) * 1974-05-10 1976-03-09 Bell Telephone Laboratories, Incorporated Selective removal of material by sputter etching
US4668366A (en) * 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
FR2639567B1 (fr) * 1988-11-25 1991-01-25 France Etat Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
JPH0758708B2 (ja) * 1989-05-18 1995-06-21 松下電器産業株式会社 ドライエッチング装置

Also Published As

Publication number Publication date
JPH065567A (ja) 1994-01-14
US5238532A (en) 1993-08-24
NO930680L (no) 1993-08-30
JP2565635B2 (ja) 1996-12-18
NO930680D0 (no) 1993-02-25
IL104663A0 (en) 1993-06-10
EP0558238A1 (en) 1993-09-01
DE69301942D1 (de) 1996-05-02
EP0558238B1 (en) 1996-03-27
DE69301942T2 (de) 1996-08-22

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