HUE054586T2 - Eljárás eltérõ kapacitású félvezetõ kondenzátorok elõállítására egy félvezetõ hordozóban - Google Patents

Eljárás eltérõ kapacitású félvezetõ kondenzátorok elõállítására egy félvezetõ hordozóban

Info

Publication number
HUE054586T2
HUE054586T2 HUE19199720A HUE19199720A HUE054586T2 HU E054586 T2 HUE054586 T2 HU E054586T2 HU E19199720 A HUE19199720 A HU E19199720A HU E19199720 A HUE19199720 A HU E19199720A HU E054586 T2 HUE054586 T2 HU E054586T2
Authority
HU
Hungary
Prior art keywords
capacitance values
different capacitance
capacitors
semiconductor substrate
semiconductor
Prior art date
Application number
HUE19199720A
Other languages
English (en)
Inventor
Tobias Erlbacher
Original Assignee
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung filed Critical Fraunhofer Ges Forschung
Publication of HUE054586T2 publication Critical patent/HUE054586T2/hu

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
HUE19199720A 2018-10-04 2019-09-26 Eljárás eltérõ kapacitású félvezetõ kondenzátorok elõállítására egy félvezetõ hordozóban HUE054586T2 (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102018217001.0A DE102018217001B4 (de) 2018-10-04 2018-10-04 Verfahren zur Herstellung von Halbleiterkondensatoren unterschiedlicher Kapazitätswerte in einem Halbleitersubstrat

Publications (1)

Publication Number Publication Date
HUE054586T2 true HUE054586T2 (hu) 2021-09-28

Family

ID=68072117

Family Applications (1)

Application Number Title Priority Date Filing Date
HUE19199720A HUE054586T2 (hu) 2018-10-04 2019-09-26 Eljárás eltérõ kapacitású félvezetõ kondenzátorok elõállítására egy félvezetõ hordozóban

Country Status (6)

Country Link
US (1) US20200111864A1 (hu)
EP (1) EP3633724B1 (hu)
JP (1) JP2020061550A (hu)
DE (1) DE102018217001B4 (hu)
DK (1) DK3633724T3 (hu)
HU (1) HUE054586T2 (hu)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983285B2 (ja) * 1994-12-20 2007-09-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴイ 供給電圧により負荷を動作させる回路
US6709947B1 (en) * 2002-12-06 2004-03-23 International Business Machines Corporation Method of area enhancement in capacitor plates
JP4835082B2 (ja) * 2005-09-28 2011-12-14 株式会社デンソー 半導体装置及びその製造方法
TWI423282B (zh) * 2005-12-22 2014-01-11 Ngk Spark Plug Co 電容器與配線板及其製造方法
DE102006017487A1 (de) 2006-04-13 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integriertes Beschaltungsbauelement auf Halbleiterbasis zur Schaltentlastung, Spannungsbegrenzung bzw. Schwingungsdämpfung
US8143659B2 (en) * 2008-04-14 2012-03-27 Infineon Technologies Ag Vertical trench capacitor, chip comprising the capacitor, and method for producing the capacitor
DE102009001919B4 (de) * 2009-03-26 2013-10-02 Semikron Elektronik Gmbh & Co. Kg Verfahren zum Herstellen einer Mehrzahl von integrierten Halbleiterbauelementen
US20120007178A1 (en) * 2010-02-09 2012-01-12 Panasonic Corporation Semiconductor device and manufacturing method thereof
US8779849B2 (en) * 2012-01-27 2014-07-15 Micron Technology, Inc. Apparatuses and methods for providing capacitance in a multi-chip module
ITMI20122226A1 (it) * 2012-12-21 2014-06-22 St Microelectronics Srl Realizzazione di dispositivi elettronici in un wafer in materiale semiconduttore con trincee aventi direzioni diverse
KR102114340B1 (ko) * 2013-07-25 2020-05-22 삼성전자주식회사 Ｔｓｖ 구조 및 디커플링 커패시터를 구비한 집적회로 소자 및 그 제조 방법
DE102014200869B4 (de) * 2013-11-22 2018-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integrierter Kondensator und Verfahren zum Herstellen desselben und dessen Verwendung
US9666523B2 (en) * 2015-07-24 2017-05-30 Nxp Usa, Inc. Semiconductor wafers with through substrate vias and back metal, and methods of fabrication thereof

Also Published As

Publication number Publication date
US20200111864A1 (en) 2020-04-09
DK3633724T3 (da) 2021-07-12
EP3633724A1 (de) 2020-04-08
DE102018217001B4 (de) 2020-06-25
DE102018217001A1 (de) 2020-04-09
EP3633724B1 (de) 2021-04-21
JP2020061550A (ja) 2020-04-16

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