HRP20211122T1 - Postupak za proizvodnju solarne ćelije - Google Patents
Postupak za proizvodnju solarne ćelije Download PDFInfo
- Publication number
- HRP20211122T1 HRP20211122T1 HRP20211122TT HRP20211122T HRP20211122T1 HR P20211122 T1 HRP20211122 T1 HR P20211122T1 HR P20211122T T HRP20211122T T HR P20211122TT HR P20211122 T HRP20211122 T HR P20211122T HR P20211122 T1 HRP20211122 T1 HR P20211122T1
- Authority
- HR
- Croatia
- Prior art keywords
- silicon
- passivation layer
- layer
- plasma
- deposition
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 238000000034 method Methods 0.000 claims 23
- 238000002161 passivation Methods 0.000 claims 18
- 238000000151 deposition Methods 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 10
- 230000008021 deposition Effects 0.000 claims 10
- 229910000676 Si alloy Inorganic materials 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 3
- 239000012686 silicon precursor Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 239000007833 carbon precursor Substances 0.000 claims 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 229910018540 Si C Inorganic materials 0.000 claims 1
- 229910018557 Si O Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Claims (7)
1. Postupak za proizvodnju solarne ćelije (1) koja sadrži
- kristalnu silicijsku jezgru (2),
- najmanje jedan n- ili p-dopiran sloj silicija ili sloj silicijeve slitine (3, 3') i
- najmanje jedan pasivacijski sloj (4, 4') koji se sastoji od silicija ili silicijeve slitine između najmanje jedne površine (21, 22) silicijeve jezgre (2) i najmanje jednog n- ili p-dopiranog sloja silicija ili sloja silicijeve slitine (3, 3'), pri čemu
je pasivacijski sloj (4, 4') istaložen se na takav način da proizvedeni pasivacijski sloj (4, 4') sadrži molekulske skupine silicijevog monohidrida (Si-H) i molekulske skupine silicijevog dihidrida (Si-H2) i da je omjer (Q) broja molekulskih skupina silicijevog dihidrida (nSi-H2) prema ukupnom broju molekulskih skupina silicijevog dihidrida (nSi-H2) i molekulskih skupina silicijevog monohidrida (nSi-H) veći od 0,4 u usporedbenom volumenu pasivacijskog sloja (4, 4')
[image]
pri čemu se pasivacijski sloj (4, 4') taloži u mnoštvu podkoraka postupka plazma pražnjenja, naznačen time što,
se u prvoj varijanti postupka, tijekom taloženja pasivacijskog sloja (4, 4'), koristi naizmjenični niz koraka taloženja silana u plazmi i koraka obrade H2 plazme,
ili,
u drugoj varijanti postupka, tijekom taloženja pasivacijskog sloja (4, 4'), kontinuirano izgaranje plazme koja djeluje na pasivacijski sloj (4, 4') koristi se tijekom svih podkoraka postupka plazma pražnjenja, te u sljedećem podkoraku postupka plazma pražnjenja za taloženje pasivacijskog sloja (4, 4'), koji slijedi prethodni podkorak ovog postupka plazma pražnjenja, najmanje jedan promjenjivi parametar taloženja, odabran od parametara taloženja tlaka procesa, električne snage i struje prekursorskog plina, se svaki puta mijenja u usporedbi s odgovarajućim parametrom taloženja prethodnog podkoraka.
2. Postupak prema patentnom zahtjevu 1, naznačen time što se prekursor ugljika koristi najmanje privremeno tijekom taloženja n- ili p-dopiranog sloja silicija ili sloja silicijeve slitine (3, 3') i/ili pasivacijskog sloja (4, 4'), pri čemu, korištenjem prekursora ugljika, proizvedeni n- ili p-dopirani sloj silicija ili sloj silicijeve slitine (3, 3') i/ili pasivacijski sloj (4, 4') sadrži ugljikove atome u Si-C vezama.
3. Postupak prema patentnom zahtjevu 1 ili 2, naznačen time što se prekursor kisika koristi najmanje privremeno tijekom taloženja n- ili p-dopiranog sloja silicija ili sloja silicijeve slitine (3, 3') i/ili pasivacijskog sloja (4, 4'), pri čemu, korištenjem prekursora kisika, proizvedeni n- ili p-dopirani sloj silicija ili sloj silicijeve slitine (3, 3') i/ili pasivacijski sloj (4, 4') sadrži ugljikove atome u Si-O vezama.
4. Postupak prema najmanje jednom od prethodnih patentnih zahtjeva, naznačen time što, se u drugoj varijanti postupka, najmanje jedan promjenjivi parametar taloženja kontinuirano povećava ili smanjuje u najmanje jednom podkoraku postupka plazma pražnjenja.
5. Postupak prema najmanje jednom od prethodnih patentnih zahtjeva, naznačen time što se, u drugoj varijanti postupka, struja plinovitog silicijevog prekursora i struja plinovitog vodika provode u procesnu komoru u prvom koraku postupka plazma pražnjenja radi taloženja pasivacijskog sloja (4, 4') i plazma se pali u drugom podkoraku ovog postupka plazma pražnjenja, pri čemu se plazma pali s početnim impulsom snage koji je dovoljno velik da spriječi epitaksijalni rast pasivacijskog sloja (4, 4') na kristalnoj silicijskoj jezgri (2).
6. Postupak prema patentnom zahtjevu 4 ili 5, naznačen time što, se u podkoraku postupka plazma pražnjenja radi taloženja pasivacijskog sloja (4, 4') koji uključuje strujanje plinovitog silicijevog prekursora, strujanje plinovitog vodika i plazmu, taloži sloj pasivacijskog sloja (4, 4'), a u daljnjem podkoraku postupka plazma pražnjenja, strujanje plinovitog vodika i plazma se održavaju, dok se strujanje plinovitog silicijevog prekursora smanjuje ili prekida.
7. Postupak prema patentnom zahtjevu 6, naznačen time što se postupak plazma pražnjenja za taloženje pasivacijskog sloja (4, 4') provodi kao postupak proizvodnje sloj na sloju, s nizom od dva podkoraka koji se ponavljaju najmanje jednom.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011052480A DE102011052480A1 (de) | 2011-08-08 | 2011-08-08 | Solarzelle und Verfahren zur Herstellung einer Solarzelle |
| PCT/IB2012/053626 WO2013021298A2 (de) | 2011-08-08 | 2012-07-16 | Solarzelle und verfahren zur herstellung einer solarzelle |
| EP12772428.4A EP2742538B1 (de) | 2011-08-08 | 2012-07-16 | Verfahren zur herstellung einer solarzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HRP20211122T1 true HRP20211122T1 (hr) | 2021-10-15 |
Family
ID=47018281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HRP20211122TT HRP20211122T1 (hr) | 2011-08-08 | 2021-07-14 | Postupak za proizvodnju solarne ćelije |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP2742538B1 (hr) |
| CN (1) | CN103748692B (hr) |
| DE (1) | DE102011052480A1 (hr) |
| ES (1) | ES2880836T3 (hr) |
| HR (1) | HRP20211122T1 (hr) |
| HU (1) | HUE054929T2 (hr) |
| PL (1) | PL2742538T3 (hr) |
| PT (1) | PT2742538T (hr) |
| TW (1) | TWI492396B (hr) |
| WO (1) | WO2013021298A2 (hr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3021366A1 (en) | 2014-11-17 | 2016-05-18 | Total Marketing Services | Solar cell and method of manufacturing thereof |
| EP3396722A4 (en) | 2015-12-24 | 2019-08-28 | Kaneka Corporation | METHOD FOR PRODUCING A DEVICE FOR PHOTOELECTRIC CONVERSION |
| KR101879363B1 (ko) | 2017-01-17 | 2018-08-16 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
| TWI647327B (zh) * | 2017-12-01 | 2019-01-11 | 財團法人金屬工業研究發展中心 | 矽基疊層的形成方法及矽基異質接面太陽能電池的製造方法 |
| CN108922937B (zh) * | 2018-07-29 | 2024-04-05 | 江苏润阳悦达光伏科技有限公司 | Hit太阳电池的硼掺杂发射极结构与制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2472842A1 (fr) * | 1979-07-06 | 1981-07-03 | Sorapec | Structure d'electrode pour generateur electrochimique |
| JPS6150378A (ja) * | 1984-08-20 | 1986-03-12 | Mitsui Toatsu Chem Inc | 非晶質太陽電池の製法 |
| FR2711276B1 (fr) * | 1993-10-11 | 1995-12-01 | Neuchatel Universite | Cellule photovoltaïque et procédé de fabrication d'une telle cellule. |
| JP3490964B2 (ja) | 2000-09-05 | 2004-01-26 | 三洋電機株式会社 | 光起電力装置 |
| JP4171428B2 (ja) | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
| TWI419341B (zh) * | 2009-05-18 | 2013-12-11 | Ind Tech Res Inst | 量子點薄膜太陽能電池 |
| WO2011032879A2 (en) * | 2009-09-18 | 2011-03-24 | Oerlikon Solar Ag, Truebbach | Method for manufacturing a thin-film, silicon-based solar cell |
| WO2011076466A2 (en) * | 2009-12-22 | 2011-06-30 | Oerlikon Solar Ag, Truebbach | Thin-film silicon tandem solar cell and method for manufacturing the same |
| WO2012085155A2 (en) * | 2010-12-22 | 2012-06-28 | Imec | Method for heterojunction interface passivation |
-
2011
- 2011-08-08 DE DE102011052480A patent/DE102011052480A1/de not_active Withdrawn
-
2012
- 2012-07-16 EP EP12772428.4A patent/EP2742538B1/de active Active
- 2012-07-16 HU HUE12772428A patent/HUE054929T2/hu unknown
- 2012-07-16 WO PCT/IB2012/053626 patent/WO2013021298A2/de active Application Filing
- 2012-07-16 ES ES12772428T patent/ES2880836T3/es active Active
- 2012-07-16 PL PL12772428T patent/PL2742538T3/pl unknown
- 2012-07-16 CN CN201280038601.0A patent/CN103748692B/zh active Active
- 2012-07-16 PT PT127724284T patent/PT2742538T/pt unknown
- 2012-07-24 TW TW101126625A patent/TWI492396B/zh active
-
2021
- 2021-07-14 HR HRP20211122TT patent/HRP20211122T1/hr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN103748692A (zh) | 2014-04-23 |
| DE102011052480A1 (de) | 2013-02-14 |
| EP2742538B1 (de) | 2021-05-05 |
| PL2742538T3 (pl) | 2021-11-02 |
| EP2742538A2 (de) | 2014-06-18 |
| TWI492396B (zh) | 2015-07-11 |
| WO2013021298A2 (de) | 2013-02-14 |
| PT2742538T (pt) | 2021-07-07 |
| HUE054929T2 (hu) | 2021-10-28 |
| CN103748692B (zh) | 2016-03-02 |
| TW201312778A (zh) | 2013-03-16 |
| WO2013021298A3 (de) | 2013-11-07 |
| ES2880836T3 (es) | 2021-11-25 |
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