HRP20210661T1 - Fotonaponski modul i fotonaponski sustav - Google Patents

Fotonaponski modul i fotonaponski sustav Download PDF

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HRP20210661T1
HRP20210661T1 HRP20210661TT HRP20210661T HRP20210661T1 HR P20210661 T1 HRP20210661 T1 HR P20210661T1 HR P20210661T T HRP20210661T T HR P20210661TT HR P20210661 T HRP20210661 T HR P20210661T HR P20210661 T1 HRP20210661 T1 HR P20210661T1
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photovoltaic
photovoltaic module
previous patent
solar cell
component
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HRP20210661TT
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English (en)
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Vesselinka Petrova-Koch
Reiner MACKH
Annette Goss
Johann Mayer
Roland Hüttinger
Joerg Leckert
Joachim WIRTH-SCHÖN
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Tubesolar Ag
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Publication of HRP20210661T1 publication Critical patent/HRP20210661T1/hr

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40Thermal components
    • H02S40/42Cooling means
    • H02S40/425Cooling means using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0481Encapsulation of modules characterised by the composition of the encapsulation material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/053Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00Supporting structures for PV modules
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S30/00Structural details of PV modules other than those related to light conversion
    • H02S30/10Frame structures
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30Electrical components
    • H02S40/38Energy storage means, e.g. batteries, structurally associated with PV modules
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/88Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E70/00Other energy conversion or management systems reducing GHG emissions
    • Y02E70/30Systems combining energy storage with energy generation of non-fossil origin

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Claims (15)

1. Fotonaponski modul (10), koji sadrži - prozirnu cijev (1) koja obuhvaća unutarnji prostor (4), s glavnim smjerom opsega (Z), i zakrivljenu unutarnju stranu (1a) okrenutu prema unutarnjem prostoru, i - mehaničku fleksibilnu fotonaponsku komponentu (2) s poljem solarnih ćelija (21) nanesenim na noseći film (22), pri čemu - fotonaponska komponenta (2) smještena je u unutarnjem prostoru (4), - polje solarnih ćelija (21) ima zakrivljenost, pri čemu zakrivljenost najmanje mjestimice slijedi zakrivljeni tok unutarnje površine (1a) cijevi (1), i - polje solarnih ćelija (21) najmanje djelomično prekriva unutarnju stranu (1a), pri čemu prekrivena unutarnja strana (1a) tvori površinu za prolaz svjetlosti (1b) fotonaponskog modula (10), naznačen time što fotonaponska komponenta (2) ima najmanje dva filma za inkapsulaciju (231, 232) međusobno povezana vezom oblikovanom od materijala, pri čemu je - polje solarnih ćelija (21) u potpunosti smješteno između filmova za inkapsulaciju (231, 232), - filmovi za inkapsulaciju (231, 232) su termoplastični filmovi, i - filmovi za inkapsulaciju (231, 232) najmanje su na mjestima u izravnom međusobnom kontaktu.
2. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što najmanje jedan film za inkapsulaciju (231, 232) na vanjskoj strani prekriva polje solarnih ćelija (21).
3. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je polje solarnih ćelija (21) u poprečnom presjeku okomito na glavni smjer opsega (Z) u granicama proizvodnih tolerancija najmanje na mjestima u obliku kružnog luka.
4. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je najmanje 30% i do 100% unutarnje strane (1a) cijevi (1) prekriveno s poljem solarnih ćelija (21).
5. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je površina za prolaz svjetlosti (1b) pojedinačna koherentna površina.
6. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je fotonaponska komponenta (2) okomito na glavni smjer opsega (Z) u potpunosti obuhvaćena s cijevi (1).
7. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je polje solarnih ćelija (21) naneseno na noseći film (22) pomoću postupka ispisa.
8. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je polje solarnih ćelija (21) CIGS polje solarnih ćelija ili organsko polje solarnih ćelija.
9. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što polje solarnih ćelija (21) ima debljinu od najviše 5 µm, poželjno najviše 2.5 µm.
10. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što fotonaponska komponenta ima mehanički fleksibilno oblikovanu komponentu koja emitira svjetlost (71, 72), pri čemu - komponenta koja emitira svjetlost (71, 72), najmanje mjestimice, prekriva slobodna područja (1c) unutarnje strane (1a) koja nisu prekrivena s poljem solarnih ćelija (21), - komponenta koja emitira svjetlost (71, 72) električno je izolirana od polja solarnih ćelija (21), i - zakrivljenost komponente koja emitira svjetlost (71, 72) u osnovi slijedi zakrivljeni tok unutarnje strane (1a).
11. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je akumulatorska baterija (8) smještena u unutarnjem prostoru (4) na osnovnoj površini (2c) fotonaponske komponente (2) udaljeno od unutarnje strane (1a), pri čemu je akumulatorska baterija (8) električno provodljivo povezana s fotonaponskom komponentom (2) .
12. Fotonaponski modul (10) prema prethodnom patentnom zahtjevu, naznačen time što je akumulatorska baterija (8) postavljena radi pohrane električne energije generirane poljem solarnih ćelija (21) i radi njezinog emitiranja u komponentu koja emitira svjetlost (71, 72) nakon vremenskog kašnjenja.
13. Fotonaponski modul (10) prema jednom od prethodnih patentnih zahtjeva, naznačen time što je cilindrična metalna cijev (3) zahtjeva, naznačen time, da je cilindrična metalna cijev (3) postavljena (4) na osnovnoj površini (2c), pri čemu je poželjno metalna cijev (3) - najmanje mjestimice u izravnom kontaktu s fotonaponskom komponentom (2), i - obuhvaća zrakom ispunjen ili vodom ispunjen rashladni prostor (31) .
14. Fotonaponski sustav, koji sadrži - mnoštvo fotonaponskih modula (10) prema jednom od prethodnih patentnih zahtjeva, - mnoštvo držača (61), i - najmanje dvije pričvrsne cijevi (63), pri čemu - svaki fotonaponski modul (10) mehanički je povezan s najmanje jednim držačem (61) i - svaki držač (61) mehanički je ograničeno odvojivo pričvršćen na najmanje jednu pričvrsnu cijev (63).
15. Fotonaponski sustav prema prethodnom patentnom zahtjevu, naznačen time što se glavni smjerovi opsega (Z) mnoštva fotonaponskih modula (10) u granicama proizvodnih tolerancija protežu paralelno jedan s drugim.
HRP20210661TT 2014-12-11 2021-04-27 Fotonaponski modul i fotonaponski sustav HRP20210661T1 (hr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014225631.3A DE102014225631A1 (de) 2014-12-11 2014-12-11 Photovoltaikmodul und Photovoltaiksystem
PCT/EP2015/079475 WO2016092090A1 (de) 2014-12-11 2015-12-11 Photovoltaikmodul und photovoltaiksystem
EP15808241.2A EP3231016B1 (de) 2014-12-11 2015-12-11 Photovoltaikmodul und photovoltaiksystem

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US (1) US10978994B2 (hr)
EP (1) EP3231016B1 (hr)
CN (1) CN107004728B (hr)
AU (1) AU2015359270B2 (hr)
CY (1) CY1124607T1 (hr)
DE (1) DE102014225631A1 (hr)
DK (1) DK3231016T3 (hr)
ES (1) ES2865253T3 (hr)
HR (1) HRP20210661T1 (hr)
HU (1) HUE054368T2 (hr)
PL (1) PL3231016T3 (hr)
PT (1) PT3231016T (hr)
RS (1) RS61732B1 (hr)
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WO (1) WO2016092090A1 (hr)

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DE102019113016A1 (de) * 2019-05-17 2020-11-19 Heliatek Gmbh Säule mit mindestens einem photovoltaischen Element und Verwendung eines photovoltaischen Elements an einer Säule
CN114128135A (zh) * 2019-07-23 2022-03-01 市民能源千叶株式会社 太阳能发电面板一体型的太阳能发电装置用架台
EP4173049A4 (en) * 2020-06-26 2023-12-20 Taka Solar Corporation SOLAR CELL SYSTEMS AND METHOD FOR THE PRODUCTION THEREOF
DE102021133197A1 (de) 2021-12-15 2023-06-15 Tubesolar Ag Photovoltaikmodul und Verfahren zur Herstellung eines Photovoltaikmoduls
DE102021133195A1 (de) 2021-12-15 2023-06-15 Tubesolar Ag Photovoltaikmodul und Verfahren zur Herstellung eines Photovoltaikmoduls
KR102540300B1 (ko) * 2022-12-07 2023-06-02 최유미 태양광 발전 및 발광이 가능한 탈부착 모듈

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PL3231016T3 (pl) 2021-08-16
CN107004728A (zh) 2017-08-01
CN107004728B (zh) 2019-06-14
DK3231016T3 (da) 2021-05-03
EP3231016A1 (de) 2017-10-18
CY1124607T1 (el) 2022-07-22
AU2015359270A1 (en) 2017-06-29
SI3231016T1 (sl) 2021-08-31
HUE054368T2 (hu) 2021-09-28
RS61732B1 (sr) 2021-05-31
WO2016092090A1 (de) 2016-06-16
US20170331426A1 (en) 2017-11-16
EP3231016B1 (de) 2021-02-17
US10978994B2 (en) 2021-04-13
PT3231016T (pt) 2021-04-20
DE102014225631A1 (de) 2016-06-16
ES2865253T3 (es) 2021-10-15
AU2015359270B2 (en) 2018-06-14

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