HK73886A - A non-volatile semiconductor memory device - Google Patents
A non-volatile semiconductor memory deviceInfo
- Publication number
- HK73886A HK73886A HK738/86A HK73886A HK73886A HK 73886 A HK73886 A HK 73886A HK 738/86 A HK738/86 A HK 738/86A HK 73886 A HK73886 A HK 73886A HK 73886 A HK73886 A HK 73886A
- Authority
- HK
- Hong Kong
- Prior art keywords
- memory device
- semiconductor memory
- volatile semiconductor
- volatile
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17559480A JPS5799782A (en) | 1980-12-12 | 1980-12-12 | Semiconductor memory device |
JP14902981A JPS5850779A (ja) | 1981-09-21 | 1981-09-21 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK73886A true HK73886A (en) | 1986-10-10 |
Family
ID=26479038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK738/86A HK73886A (en) | 1980-12-12 | 1986-10-02 | A non-volatile semiconductor memory device |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE3148807C2 (xx) |
GB (1) | GB2092824B (xx) |
HK (1) | HK73886A (xx) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2620847A1 (fr) * | 1987-09-18 | 1989-03-24 | Thomson Semiconducteurs | Procede d'auto-alignement des grilles flottantes de transistors a grille flottante d'une memoire non volatile et memoire obtenue selon ce procede |
-
1981
- 1981-11-24 GB GB8135384A patent/GB2092824B/en not_active Expired
- 1981-12-10 DE DE3148807A patent/DE3148807C2/de not_active Expired
-
1986
- 1986-10-02 HK HK738/86A patent/HK73886A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB2092824B (en) | 1984-08-15 |
DE3148807C2 (de) | 1983-11-03 |
DE3148807A1 (de) | 1982-08-12 |
GB2092824A (en) | 1982-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE | Patent expired |