HK73886A - A non-volatile semiconductor memory device - Google Patents

A non-volatile semiconductor memory device

Info

Publication number
HK73886A
HK73886A HK738/86A HK73886A HK73886A HK 73886 A HK73886 A HK 73886A HK 738/86 A HK738/86 A HK 738/86A HK 73886 A HK73886 A HK 73886A HK 73886 A HK73886 A HK 73886A
Authority
HK
Hong Kong
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Application number
HK738/86A
Other languages
English (en)
Inventor
Yasunori Nakazaki
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17559480A external-priority patent/JPS5799782A/ja
Priority claimed from JP14902981A external-priority patent/JPS5850779A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of HK73886A publication Critical patent/HK73886A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
HK738/86A 1980-12-12 1986-10-02 A non-volatile semiconductor memory device HK73886A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17559480A JPS5799782A (en) 1980-12-12 1980-12-12 Semiconductor memory device
JP14902981A JPS5850779A (ja) 1981-09-21 1981-09-21 半導体記憶装置

Publications (1)

Publication Number Publication Date
HK73886A true HK73886A (en) 1986-10-10

Family

ID=26479038

Family Applications (1)

Application Number Title Priority Date Filing Date
HK738/86A HK73886A (en) 1980-12-12 1986-10-02 A non-volatile semiconductor memory device

Country Status (3)

Country Link
DE (1) DE3148807C2 (xx)
GB (1) GB2092824B (xx)
HK (1) HK73886A (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2620847A1 (fr) * 1987-09-18 1989-03-24 Thomson Semiconducteurs Procede d'auto-alignement des grilles flottantes de transistors a grille flottante d'une memoire non volatile et memoire obtenue selon ce procede

Also Published As

Publication number Publication date
GB2092824B (en) 1984-08-15
DE3148807C2 (de) 1983-11-03
DE3148807A1 (de) 1982-08-12
GB2092824A (en) 1982-08-18

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Legal Events

Date Code Title Description
PE Patent expired