HK47293A - Polyamides with hexafluoroisopropylidene groups,positively acting photosensitive compositions,and recording materials using them - Google Patents

Polyamides with hexafluoroisopropylidene groups,positively acting photosensitive compositions,and recording materials using them

Info

Publication number
HK47293A
HK47293A HK472/93A HK47293A HK47293A HK 47293 A HK47293 A HK 47293A HK 472/93 A HK472/93 A HK 472/93A HK 47293 A HK47293 A HK 47293A HK 47293 A HK47293 A HK 47293A
Authority
HK
Hong Kong
Prior art keywords
positively acting
photosensitive compositions
polyamides
recording materials
acting photosensitive
Prior art date
Application number
HK472/93A
Inventor
Werner H Dr Mueller
Bernd Dr Hupfer
Dinesh N Khanna
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of HK47293A publication Critical patent/HK47293A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C08G69/32—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from aromatic diamines and aromatic dicarboxylic acids with both amino and carboxylic groups aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polyamides (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)

Abstract

A polyamide which is suitable as binder for positively acting photosensitive compositions and corresponds to the formula <IMAGE> The positively acting photosensitive compositions made with this binder have a high photosensitivity, a good solubility in the solvents used to produce the photoresist compositions, and a good adhesive strength on the substrate material. The image resolution is very high even after storing the photosensitive composition.
HK472/93A 1986-10-02 1993-05-13 Polyamides with hexafluoroisopropylidene groups,positively acting photosensitive compositions,and recording materials using them HK47293A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91534286A 1986-10-02 1986-10-02

Publications (1)

Publication Number Publication Date
HK47293A true HK47293A (en) 1993-05-21

Family

ID=25435594

Family Applications (1)

Application Number Title Priority Date Filing Date
HK472/93A HK47293A (en) 1986-10-02 1993-05-13 Polyamides with hexafluoroisopropylidene groups,positively acting photosensitive compositions,and recording materials using them

Country Status (7)

Country Link
EP (1) EP0264678B1 (en)
JP (2) JPH0660140B2 (en)
KR (1) KR970007022B1 (en)
AT (1) ATE67611T1 (en)
DE (1) DE3773110D1 (en)
HK (1) HK47293A (en)
SG (1) SG18493G (en)

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DE59600371D1 (en) * 1995-03-23 1998-09-03 Siemens Ag Process for the preparation of polybenzoxazole precursors and corresponding resist solutions
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DE59602852D1 (en) * 1995-06-19 1999-09-30 Siemens Ag Process for the preparation of poly-o-hydroxyamides
DE59606492D1 (en) * 1995-08-31 2001-04-05 Infineon Technologies Ag Production of poly-o-hydroxyamides and poly-o-mercaptoamides
DE59607034D1 (en) * 1995-08-31 2001-07-12 Infineon Technologies Ag Process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides
EP0761719B1 (en) * 1995-08-31 2001-03-28 Infineon Technologies AG Process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides
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EP0905121B1 (en) 1997-09-24 2002-07-03 Infineon Technologies AG o-nitro(thio)phenol compounds and their preparation
EP0918050B1 (en) * 1997-09-24 2001-12-12 Infineon Technologies AG Bis-o-amino(thio)phenols and their preparation
EP0905170B1 (en) * 1997-09-24 2013-10-30 Qimonda AG Polybenzoxazoles and polybenzothiazoles precursors
EP0905124B1 (en) * 1997-09-24 2001-12-12 Infineon Technologies AG o-amino(thio)phenol-carboxylic acids and their preparation
EP0905169B8 (en) * 1997-09-24 2008-07-16 Infineon Technologies AG Precursors of polybenzoxazoles and polybenzothiazoles
EP0905123B1 (en) 1997-09-24 2001-12-12 Infineon Technologies AG o-amino(thio)phenol-carboxylic acids and their preparation
EP0906903B1 (en) * 1997-09-24 2001-12-12 Infineon Technologies AG Bis-o-amino(thio)phenols and their preparartion
KR20010071149A (en) 1998-04-15 2001-07-28 야마모토 카즈모토 Positive Resist Composition
JP2000128984A (en) * 1998-10-28 2000-05-09 Sumitomo Bakelite Co Ltd Polybenzoxazole precursor and resin
JP4518627B2 (en) * 2000-03-14 2010-08-04 旭化成イーマテリアルズ株式会社 Hydroxy polyamide
EP1138804A3 (en) 2000-03-27 2003-06-25 Infineon Technologies AG Component with at least two contiguous insulating layers and manufacturing method therefor
JP4798851B2 (en) * 2001-01-23 2011-10-19 旭化成イーマテリアルズ株式会社 Alkoxysilane compound and composition thereof
DE10125372B4 (en) 2001-05-23 2007-09-13 Infineon Technologies Ag Mixture for use as an antireflective layer, substrate with an antireflection layer and method for producing an antireflection layer
DE10145471A1 (en) 2001-09-14 2003-04-17 Infineon Technologies Ag A photosensitive formulation including a poly-o-hydroxyamide with free OH groups, a solvent inhibitor with polar groups and blocked with acid labile groups useful in the electronic and microelectronic industries
DE10145469B4 (en) 2001-09-14 2006-07-06 Infineon Technologies Ag Poly-o-hydroxyamide and process for its further processing to polybenzoxazole
US7282323B2 (en) 2002-07-11 2007-10-16 Asahi Kasei Emd Corporation Highly heat-resistant, negative-type photosensitive resin composition
DE10238024B4 (en) * 2002-08-20 2007-03-08 Infineon Technologies Ag Method for integrating air as a dielectric in semiconductor devices
JP2006227063A (en) * 2005-02-15 2006-08-31 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for manufacturing pattern, and electronic component
WO2007049524A1 (en) 2005-10-26 2007-05-03 Asahi Kasei Emd Corporation Positive photosensitive resin composition
CN101405655B (en) 2006-03-16 2013-02-06 旭硝子株式会社 Negative-type photosensitive fluorinated aromatic resin composition
WO2008020573A1 (en) 2006-08-15 2008-02-21 Asahi Kasei Emd Corporation Positive photosensitive resin composition
US9188860B2 (en) 2007-09-06 2015-11-17 Toray Industries, Inc. Method for producing polyamide and resin composition
KR100914064B1 (en) 2008-03-19 2009-08-28 제일모직주식회사 Positive type photosensitive resin composition
KR101023089B1 (en) 2008-09-29 2011-03-24 제일모직주식회사 Positive type photosensitive resin composition
TWI459141B (en) 2008-10-20 2014-11-01 Cheil Ind Inc Positive photosensitive resin composition
US8536299B2 (en) 2008-12-08 2013-09-17 University Of Dayton Rigid-rod copolymer compositions and the polymeric fibers fabricated from those compositions for enhanced flame resistance
JP5577624B2 (en) * 2009-05-22 2014-08-27 日立化成デュポンマイクロシステムズ株式会社 Process for producing poly-o-hydroxyamide
KR101333698B1 (en) 2009-11-10 2013-11-27 제일모직주식회사 Positive photosensitive resin composition
KR101333704B1 (en) 2009-12-29 2013-11-27 제일모직주식회사 Positive type photosensitive resin composition
WO2012008736A2 (en) * 2010-07-14 2012-01-19 주식회사 엘지화학 Positive-type photosensitive resin composition and black bank of an organic light-emitting device including same
KR20120066923A (en) 2010-12-15 2012-06-25 제일모직주식회사 Novel phenol compounds and positive photosensitive resin composition including the same
KR101423539B1 (en) 2010-12-20 2014-07-25 삼성전자 주식회사 Positive type photosensitive resin composition
KR101400187B1 (en) 2010-12-30 2014-05-27 제일모직 주식회사 Positive photosensitive resin composition, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer
KR101400192B1 (en) 2010-12-31 2014-05-27 제일모직 주식회사 Positive photosensitive resin composition, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer
KR101400186B1 (en) 2010-12-31 2014-05-27 제일모직 주식회사 Positive photosensitive resin composition, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer
KR101423176B1 (en) 2011-11-29 2014-07-25 제일모직 주식회사 Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film
KR101413076B1 (en) 2011-12-23 2014-06-30 제일모직 주식회사 Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film
KR101432603B1 (en) 2011-12-29 2014-08-21 제일모직주식회사 Photosensitive novolak resin, positive photosensitive resin composition including same, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer
KR101423177B1 (en) 2011-12-30 2014-07-29 제일모직 주식회사 Positive type photosensitive resin composition
KR20140086724A (en) 2012-12-28 2014-07-08 제일모직주식회사 Photosensitive resin composition for insulating film of display device, insulating film using the same, and display device using the same
KR101636861B1 (en) 2012-12-28 2016-07-06 제일모직 주식회사 Photosensitive resin composition for insulating film of display device, insulating film using the same, and display device using the same
KR101696963B1 (en) * 2013-09-30 2017-01-16 주식회사 엘지화학 Photosensitive resin composition

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US4093461A (en) * 1975-07-18 1978-06-06 Gaf Corporation Positive working thermally stable photoresist composition, article and method of using
JPH0660140A (en) * 1992-08-06 1994-03-04 Mitsubishi Electric Corp Semiconductor design verification device

Also Published As

Publication number Publication date
KR970007022B1 (en) 1997-05-02
JP2566664B2 (en) 1996-12-25
JPS6396162A (en) 1988-04-27
DE3773110D1 (en) 1991-10-24
EP0264678A1 (en) 1988-04-27
ATE67611T1 (en) 1991-10-15
EP0264678B1 (en) 1991-09-18
KR880005174A (en) 1988-06-28
JPH0320743A (en) 1991-01-29
JPH0660140B2 (en) 1994-08-10
SG18493G (en) 1993-04-16

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Legal Events

Date Code Title Description
PF Patent in force
AS Change of ownership

Owner name: AZ ELECTRONIC MATERIALS (JAPAN) K.K.

Free format text: FORMER OWNER(S): CLARIANT FINANCE (BVI) LIMITED

CHPA Change of a particular in the register (except of change of ownership)
PE Patent expired

Effective date: 20070930