HK45597A - P-I-N photodiodes with transparent conductive contacts - Google Patents

P-I-N photodiodes with transparent conductive contacts

Info

Publication number
HK45597A
HK45597A HK45597A HK45597A HK45597A HK 45597 A HK45597 A HK 45597A HK 45597 A HK45597 A HK 45597A HK 45597 A HK45597 A HK 45597A HK 45597 A HK45597 A HK 45597A
Authority
HK
Hong Kong
Prior art keywords
photodiodes
transparent conductive
conductive contacts
contacts
transparent
Prior art date
Application number
HK45597A
Other languages
English (en)
Inventor
Paul Raymond Berger
Alfred Yi Cho
Niloy Kumar Dutta
John Lopata
Henry Miles O'bryan Jr
Deborah Lee Sivco
George John Zydzik
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK45597A publication Critical patent/HK45597A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
HK45597A 1992-03-02 1997-04-10 P-I-N photodiodes with transparent conductive contacts HK45597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/844,264 US5212395A (en) 1992-03-02 1992-03-02 P-I-N photodiodes with transparent conductive contacts

Publications (1)

Publication Number Publication Date
HK45597A true HK45597A (en) 1997-04-18

Family

ID=25292249

Family Applications (1)

Application Number Title Priority Date Filing Date
HK45597A HK45597A (en) 1992-03-02 1997-04-10 P-I-N photodiodes with transparent conductive contacts

Country Status (7)

Country Link
US (1) US5212395A (xx)
EP (1) EP0559347B1 (xx)
JP (1) JP2706029B2 (xx)
KR (1) KR100271833B1 (xx)
CA (1) CA2087356C (xx)
DE (1) DE69306439T2 (xx)
HK (1) HK45597A (xx)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9517930D0 (en) * 1995-09-01 1995-11-01 Imperial College Electronically gated microstructure
US5824418A (en) * 1995-09-05 1998-10-20 Northrop Grumman Corporation Optically transparent, electrically conductive semiconductor windows
US5771256A (en) * 1996-06-03 1998-06-23 Bell Communications Research, Inc. InP-based lasers with reduced blue shifts
US5872016A (en) * 1996-06-18 1999-02-16 Lucent Technologies Inc. Process of making an optoelectronic devices utilizing multiple quantum well pin structures
US5880482A (en) * 1997-01-29 1999-03-09 The Board Of Trustees Of The University Of Illinios Low dark current photodetector
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6879014B2 (en) 2000-03-20 2005-04-12 Aegis Semiconductor, Inc. Semitransparent optical detector including a polycrystalline layer and method of making
AU2001249311A1 (en) * 2000-03-27 2001-10-08 Aegis Semiconductor A semitransparent optical detector including edge passivation
US6670599B2 (en) 2000-03-27 2003-12-30 Aegis Semiconductor, Inc. Semitransparent optical detector on a flexible substrate and method of making
JP5011607B2 (ja) * 2001-04-16 2012-08-29 住友電気工業株式会社 受光素子
WO2003012531A1 (en) 2001-08-02 2003-02-13 Aegis Semiconductor Tunable optical instruments
JP4075442B2 (ja) * 2002-04-18 2008-04-16 沖電気工業株式会社 光半導体装置とその製造方法
KR100429388B1 (ko) * 2002-04-30 2004-04-29 국방과학연구소 핀다이오드 및 핀다이오드 제조방법
US7288825B2 (en) 2002-12-18 2007-10-30 Noble Peak Vision Corp. Low-noise semiconductor photodetectors
CN100499173C (zh) * 2003-05-02 2009-06-10 派克米瑞斯有限责任公司 Pin光电检测器
US7221827B2 (en) 2003-09-08 2007-05-22 Aegis Semiconductor, Inc. Tunable dispersion compensator
JP4164685B2 (ja) 2004-07-06 2008-10-15 セイコーエプソン株式会社 光素子及びその製造方法
US7492028B2 (en) * 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
US7687870B2 (en) * 2006-12-29 2010-03-30 Panasonic Corporation Laterally configured electrooptical devices
US8871620B2 (en) 2011-07-28 2014-10-28 International Business Machines Corporation III-V photovoltaic elements
US9893227B2 (en) * 2013-05-24 2018-02-13 The United States Of America As Represented By The Secretary Of The Army Enhanced deep ultraviolet photodetector and method thereof
RU2537087C1 (ru) * 2013-09-10 2014-12-27 Открытое акционерное общество "НПО "Орион" СПОСОБ ИЗГОТОВЛЕНИЯ КРЕМНИЕВОГО p-i-n ФОТОДИОДА
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置
JP6507912B2 (ja) 2015-07-30 2019-05-08 三菱電機株式会社 半導体受光素子
US9640944B2 (en) 2015-09-08 2017-05-02 Fuji Xerox Co., Ltd. Method of manufacturing optical semiconductor element
TWI772253B (zh) * 2015-11-13 2022-08-01 晶元光電股份有限公司 發光元件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2049507C3 (de) * 1970-10-08 1979-11-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Lichtempfindliche Halbleiteranordnung
US3811953A (en) * 1971-09-20 1974-05-21 American Cyanamid Co Light-transmitting electrically conducting cadmium stannate and methods of producing same
DE3280418T2 (de) * 1981-07-17 1993-03-04 Kanegafuchi Chemical Ind Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0663829B2 (ja) * 1985-10-16 1994-08-22 三洋電機株式会社 色センサ
JPS62198169A (ja) * 1986-02-25 1987-09-01 Fuji Electric Corp Res & Dev Ltd 太陽電池
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide

Also Published As

Publication number Publication date
DE69306439T2 (de) 1997-06-26
CA2087356A1 (en) 1993-09-03
EP0559347A1 (en) 1993-09-08
KR100271833B1 (ko) 2000-11-15
US5212395A (en) 1993-05-18
DE69306439D1 (de) 1997-01-23
JPH0613645A (ja) 1994-01-21
EP0559347B1 (en) 1996-12-11
KR930020751A (ko) 1993-10-20
CA2087356C (en) 1996-03-12
JP2706029B2 (ja) 1998-01-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)