HK42688A - Image-forming member for electrophotography - Google Patents

Image-forming member for electrophotography

Info

Publication number
HK42688A
HK42688A HK426/88A HK42688A HK42688A HK 42688 A HK42688 A HK 42688A HK 426/88 A HK426/88 A HK 426/88A HK 42688 A HK42688 A HK 42688A HK 42688 A HK42688 A HK 42688A
Authority
HK
Hong Kong
Prior art keywords
electrophotography
image
forming member
forming
Prior art date
Application number
HK426/88A
Other languages
English (en)
Inventor
Katsumi Nakagawa
Toshiyuki Komatsu
Yutaka Hirai
Teruo Misumi
Tadaji Fukuda
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2462878A external-priority patent/JPS54116930A/ja
Priority claimed from JP2903078A external-priority patent/JPS54121743A/ja
Priority claimed from JP5185178A external-priority patent/JPS54143645A/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of HK42688A publication Critical patent/HK42688A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Electrophotography Using Other Than Carlson'S Method (AREA)
HK426/88A 1978-03-03 1988-06-09 Image-forming member for electrophotography HK42688A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2462878A JPS54116930A (en) 1978-03-03 1978-03-03 Image forming element for zerography
JP2903078A JPS54121743A (en) 1978-03-14 1978-03-14 Electrophotographic image forming member
JP5185178A JPS54143645A (en) 1978-04-28 1978-04-28 Image forming member for electrophotography

Publications (1)

Publication Number Publication Date
HK42688A true HK42688A (en) 1988-06-17

Family

ID=27284728

Family Applications (1)

Application Number Title Priority Date Filing Date
HK426/88A HK42688A (en) 1978-03-03 1988-06-09 Image-forming member for electrophotography

Country Status (4)

Country Link
US (6) US4461819A (de)
DE (3) DE2954551C2 (de)
GB (1) GB2018446B (de)
HK (1) HK42688A (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484809B1 (en) * 1977-12-05 1995-04-18 Plasma Physics Corp Glow discharge method and apparatus and photoreceptor devices made therewith
DE2954551C2 (de) * 1978-03-03 1989-02-09 Canon K.K., Tokio/Tokyo, Jp
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
DE3046509A1 (de) * 1979-12-13 1981-08-27 Canon K.K., Tokyo Elektrophotographisches bilderzeugungsmaterial
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS56150752A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Electrophotographic sensitive film
DE3117037C2 (de) * 1980-05-08 1987-05-14 Takao Sakai Osaka Kawamura Elektrophotografisches Aufzeichnungsmaterial
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
GB2088074B (en) * 1980-09-26 1984-12-19 Copyer Co Electrophotographic photosensitive member
GB2088628B (en) * 1980-10-03 1985-06-12 Canon Kk Photoconductive member
US4446217A (en) * 1981-02-03 1984-05-01 Canon Kabushiki Kaisha Electrophotographic photosensitive member having a hydrazone containing layer
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material
US4456671A (en) * 1981-12-23 1984-06-26 Canon Kabushiki Kaisha Electrophotographic photosensitive member having a photosensitive layer containing a hydrazone compound
JPS58199353A (ja) * 1982-05-17 1983-11-19 Canon Inc 電子写真感光体
NL8204056A (nl) * 1982-10-21 1984-05-16 Oce Nederland Bv Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen.
CA1249476A (en) * 1984-08-20 1989-01-31 Paul M. Borsenberger Low field electrophotographic process
US4540647A (en) * 1984-08-20 1985-09-10 Eastman Kodak Company Method for the manufacture of photoconductive insulating elements with a broad dynamic exposure range
US4619877A (en) * 1984-08-20 1986-10-28 Eastman Kodak Company Low field electrophotographic process
JPS6191665A (ja) * 1984-10-11 1986-05-09 Kyocera Corp 電子写真感光体
NL8500039A (nl) * 1985-01-08 1986-08-01 Oce Nederland Bv Electrofotografische werkwijze voor het vormen van een zichtbaar beeld.
US4711831A (en) * 1987-01-27 1987-12-08 Eastman Kodak Company Spectral sensitization of amorphous silicon photoconductive elements with phthalocyanine and arylamine layers
US4780385A (en) * 1987-04-21 1988-10-25 Xerox Corporation Electrophotographic imaging member containing zirconium in base layer
US4971878A (en) * 1988-04-04 1990-11-20 Sharp Kabushiki Kaisha Amorphous silicon photosensitive member for use in electrophotography
JPH0621427A (ja) * 1992-07-03 1994-01-28 Mitsubishi Electric Corp 光電変換装置
EP0605972B1 (de) * 1992-12-14 1999-10-27 Canon Kabushiki Kaisha Lichtempfindliches Element mit einer mehrschichtigen Schicht mit erhöhter Wasserstoff oder/und Halogenatom Konzentration im Grenzflächenbereich benachbarter Schichten
US5747208A (en) * 1992-12-28 1998-05-05 Minolta Co., Ltd. Method of using photosensitive member comprising thick photosensitive layer having a specified mobility
JP3335279B2 (ja) * 1996-02-22 2002-10-15 旭光学工業株式会社 電子現像型カメラの暗電流測定装置および記録動作制御装置
JP3437376B2 (ja) * 1996-05-21 2003-08-18 キヤノン株式会社 プラズマ処理装置及び処理方法
DE69929371T2 (de) * 1998-05-14 2006-08-17 Canon K.K. Elektrophotographischer Bildherstellungsapparat
US6372397B1 (en) 1999-01-06 2002-04-16 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus
JP4546055B2 (ja) * 2002-09-24 2010-09-15 キヤノン株式会社 クリーニングブラシのブラシ密度と静電像の１画素面積の設定方法
EP1892578B1 (de) * 2005-06-02 2013-08-14 Canon Kabushiki Kaisha Elektrophotographischer photorezeptor, prozesskassette und elektrophotographische vorrichtung
US7635635B2 (en) * 2006-04-06 2009-12-22 Fairchild Semiconductor Corporation Method for bonding a semiconductor substrate to a metal substrate
JP5451303B2 (ja) * 2008-10-30 2014-03-26 キヤノン株式会社 画像形成装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443938A (en) * 1964-05-18 1969-05-13 Xerox Corp Frost imaging employing a deformable electrode
US3569763A (en) * 1966-02-14 1971-03-09 Tokyo Shibaura Electric Co Multilayer photoconductive device having adjacent layers of different spectral response
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US3649116A (en) * 1968-07-19 1972-03-14 Owens Illinois Inc Discontinuous electrode for electrophotography
JPS4925218B1 (de) * 1968-09-21 1974-06-28
US4052209A (en) * 1975-03-07 1977-10-04 Minnesota Mining And Manufacturing Company Semiconductive and sensitized photoconductive compositions
DE2621854A1 (de) * 1975-07-01 1977-01-27 Xerox Corp Abbildungselement
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
US4123269A (en) * 1977-09-29 1978-10-31 Xerox Corporation Electrostatographic photosensitive device comprising hole injecting and hole transport layers
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2954551C2 (de) * 1978-03-03 1989-02-09 Canon K.K., Tokio/Tokyo, Jp
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
US4239554A (en) * 1978-07-17 1980-12-16 Shunpei Yamazaki Semiconductor photoelectric conversion device
JPS5529154A (en) * 1978-08-23 1980-03-01 Shunpei Yamazaki Semiconductor device
JPS5625743A (en) * 1979-08-08 1981-03-12 Matsushita Electric Ind Co Ltd Electrophotographic receptor
JPS5664347A (en) * 1979-10-30 1981-06-01 Fuji Photo Film Co Ltd Electrophotographic receptor
US4388482A (en) * 1981-01-29 1983-06-14 Yoshihiro Hamakawa High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon

Also Published As

Publication number Publication date
US4670369A (en) 1987-06-02
USRE35198E (en) 1996-04-02
GB2018446B (en) 1983-02-23
US4551405A (en) 1985-11-05
DE2908123C2 (de) 1987-07-23
DE2954552C2 (de) 1989-02-09
DE2954551C2 (de) 1989-02-09
US4613558A (en) 1986-09-23
DE2908123A1 (de) 1979-09-06
US4557990A (en) 1985-12-10
US4461819A (en) 1984-07-24
GB2018446A (en) 1979-10-17

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Legal Events

Date Code Title Description
PE Patent expired