HK38288A - Catenated phosphorus material, production and use thereof and devices employing same - Google Patents

Catenated phosphorus material, production and use thereof and devices employing same

Info

Publication number
HK38288A
HK38288A HK382/88A HK38288A HK38288A HK 38288 A HK38288 A HK 38288A HK 382/88 A HK382/88 A HK 382/88A HK 38288 A HK38288 A HK 38288A HK 38288 A HK38288 A HK 38288A
Authority
HK
Hong Kong
Prior art keywords
production
devices employing
employing same
pnictides
phosphorus material
Prior art date
Application number
HK382/88A
Other languages
English (en)
Inventor
Allen Kuck Mark
Gabriel Michel Christian
Schachter Rozalie
Andrew Baumann John
Mordecai Raccah Paul
Original Assignee
Stauffer Chemical Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/419,537 external-priority patent/US4620968A/en
Priority claimed from US06/442,208 external-priority patent/US4508931A/en
Application filed by Stauffer Chemical Company filed Critical Stauffer Chemical Company
Publication of HK38288A publication Critical patent/HK38288A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/003Phosphorus
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/02Preparation of phosphorus
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/04Purification of phosphorus
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • C01B25/081Other phosphides of alkali metals, alkaline-earth metals or magnesium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • C01B25/088Other phosphides containing plural metal
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K21/00Fireproofing materials
    • C09K21/02Inorganic materials
    • C09K21/04Inorganic materials containing phosphorus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/28Other inorganic materials
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/28Other inorganic materials
    • C03C2217/283Borides, phosphides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/29Mixtures
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Luminescent Compositions (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Thin Magnetic Films (AREA)
HK382/88A 1981-12-30 1988-05-26 Catenated phosphorus material, production and use thereof and devices employing same HK38288A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33570681A 1981-12-30 1981-12-30
US06/419,537 US4620968A (en) 1981-12-30 1982-09-17 Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US06/442,208 US4508931A (en) 1981-12-30 1982-11-16 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them

Publications (1)

Publication Number Publication Date
HK38288A true HK38288A (en) 1988-06-03

Family

ID=27407080

Family Applications (2)

Application Number Title Priority Date Filing Date
HK382/88A HK38288A (en) 1981-12-30 1988-05-26 Catenated phosphorus material, production and use thereof and devices employing same
HK381/88A HK38188A (en) 1981-12-30 1988-05-26 Forming semiconductor devices employing catenated phosphorus materials and such devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK381/88A HK38188A (en) 1981-12-30 1988-05-26 Forming semiconductor devices employing catenated phosphorus materials and such devices

Country Status (23)

Country Link
JP (1) JPH0611644B2 (enrdf_load_stackoverflow)
KR (1) KR840003144A (enrdf_load_stackoverflow)
AU (1) AU553091B2 (enrdf_load_stackoverflow)
BR (1) BR8207569A (enrdf_load_stackoverflow)
CA (1) CA1215521A (enrdf_load_stackoverflow)
CH (3) CH663609A5 (enrdf_load_stackoverflow)
DE (1) DE3247869A1 (enrdf_load_stackoverflow)
DK (1) DK578782A (enrdf_load_stackoverflow)
ES (2) ES518662A0 (enrdf_load_stackoverflow)
FR (1) FR2530866B1 (enrdf_load_stackoverflow)
GB (2) GB2113663B (enrdf_load_stackoverflow)
GR (1) GR78374B (enrdf_load_stackoverflow)
HK (2) HK38288A (enrdf_load_stackoverflow)
IE (1) IE53683B1 (enrdf_load_stackoverflow)
IL (1) IL67565A0 (enrdf_load_stackoverflow)
IT (1) IT1210712B (enrdf_load_stackoverflow)
MA (1) MA19673A1 (enrdf_load_stackoverflow)
NL (1) NL8205055A (enrdf_load_stackoverflow)
NO (1) NO824406L (enrdf_load_stackoverflow)
PL (1) PL239879A1 (enrdf_load_stackoverflow)
PT (1) PT76047B (enrdf_load_stackoverflow)
SE (4) SE8207299L (enrdf_load_stackoverflow)
SG (1) SG97687G (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
AU2992784A (en) * 1983-06-29 1985-01-03 Stauffer Chemical Company Passivation and insulation of iii-v devices with pnictides
DK318184A (da) * 1984-02-17 1985-08-18 Stauffer Chemical Co Hoejvakuumaflejringsprocesser under anvendelse af et kontinuerligt pnictidleveringssystem
AU2993684A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vapour deposition of pnictides
AU2993784A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vacuum deposition of pnictides
GB9010000D0 (en) * 1990-05-03 1990-06-27 Stc Plc Phosphide films
JP4958076B2 (ja) * 2008-01-25 2012-06-20 住友電気工業株式会社 樹脂組成物中の赤リンの分析方法
GB201601838D0 (en) 2016-02-02 2016-03-16 Univ Surrey A composition
KR102307523B1 (ko) * 2019-10-30 2021-09-30 울산과학기술원 폴리포스파이드 전구체의 제조방법, 결정성 적린 박막의 제조방법 및 전자 소자 응용
CN111170292B (zh) * 2019-11-04 2023-09-29 湖北大学 一种纤维相红磷纳米粒子的制备方法及其应用
CN113932082A (zh) * 2021-10-11 2022-01-14 宁夏大学 电池片扩散工艺的磷源传输装置以及包含其的温度控制系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397038A (en) * 1964-11-30 1968-08-13 Hooker Chemical Corp Manufacture of a reactive trisodium phosphide
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
GB2055774B (en) * 1979-04-09 1983-02-02 Plessey Co Ltd Methods of producing semiconductor materials

Also Published As

Publication number Publication date
CH672778A5 (enrdf_load_stackoverflow) 1989-12-29
FR2530866B1 (fr) 1985-07-12
KR840003144A (ko) 1984-08-13
GB2172585B (en) 1987-01-28
SE8401510L (sv) 1984-03-19
SE8401509D0 (sv) 1984-03-19
ES8600164A1 (es) 1985-10-01
DE3247869A1 (de) 1983-08-18
IE823057L (en) 1983-06-30
IE53683B1 (en) 1989-01-04
NO824406L (no) 1983-07-01
ES530659A0 (es) 1985-10-01
CH663609A5 (de) 1987-12-31
SE8401511L (sv) 1984-03-19
PL239879A1 (en) 1984-03-26
IT8249774A0 (it) 1982-12-30
JPH05201712A (ja) 1993-08-10
PT76047B (en) 1985-11-18
ES8406000A1 (es) 1984-06-16
GB2113663B (en) 1986-10-29
AU9158882A (en) 1983-07-07
BR8207569A (pt) 1983-10-25
MA19673A1 (fr) 1983-07-01
CA1215521A (en) 1986-12-23
SE8401510D0 (sv) 1984-03-19
SE8207299L (sv) 1983-07-01
CH666252A5 (de) 1988-07-15
SG97687G (en) 1988-06-03
GR78374B (enrdf_load_stackoverflow) 1984-09-26
GB8516583D0 (en) 1985-08-07
JPH0611644B2 (ja) 1994-02-16
SE8401509L (sv) 1984-03-19
NL8205055A (nl) 1983-07-18
SE8401511D0 (sv) 1984-03-19
AU553091B2 (en) 1986-07-03
GB2172585A (en) 1986-09-24
FR2530866A1 (fr) 1984-01-27
HK38188A (en) 1988-06-03
IT1210712B (it) 1989-09-20
SE8207299D0 (sv) 1982-12-21
PT76047A (en) 1983-01-01
GB2113663A (en) 1983-08-10
DK578782A (da) 1983-07-01
IL67565A0 (en) 1983-05-15
ES518662A0 (es) 1984-06-16

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