JPH0611644B2 - 鎖状リン材料 - Google Patents

鎖状リン材料

Info

Publication number
JPH0611644B2
JPH0611644B2 JP4151368A JP15136892A JPH0611644B2 JP H0611644 B2 JPH0611644 B2 JP H0611644B2 JP 4151368 A JP4151368 A JP 4151368A JP 15136892 A JP15136892 A JP 15136892A JP H0611644 B2 JPH0611644 B2 JP H0611644B2
Authority
JP
Japan
Prior art keywords
phosphorus
tube
materials
amorphous
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4151368A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05201712A (ja
Inventor
アレン クック マーク
ガブリエル マイクル クリスチャン
シャチター ロザリー
アンドリュー バウマン ジョン
モルデカイ ラカー ポール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wyeth Holdings LLC
Original Assignee
American Cyanamid Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/419,537 external-priority patent/US4620968A/en
Priority claimed from US06/442,208 external-priority patent/US4508931A/en
Application filed by American Cyanamid Co filed Critical American Cyanamid Co
Publication of JPH05201712A publication Critical patent/JPH05201712A/ja
Publication of JPH0611644B2 publication Critical patent/JPH0611644B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/003—Phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/02—Preparation of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/04—Purification of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/081—Other phosphides of alkali metals, alkaline-earth metals or magnesium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K21/00—Fireproofing materials
    • C09K21/02—Inorganic materials
    • C09K21/04—Inorganic materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/283—Borides, phosphides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/29—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Luminescent Compositions (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Thin Magnetic Films (AREA)
JP4151368A 1981-12-30 1992-05-19 鎖状リン材料 Expired - Lifetime JPH0611644B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US33570681A 1981-12-30 1981-12-30
US335706 1981-12-30
US06/419,537 US4620968A (en) 1981-12-30 1982-09-17 Monoclinic phosphorus formed from vapor in the presence of an alkali metal
US419537 1982-09-17
US06/442,208 US4508931A (en) 1981-12-30 1982-11-16 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
US442208 1982-11-16

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP58000025A Division JPS58135115A (ja) 1981-12-30 1983-01-04 新規リン材料固体フィルム

Publications (2)

Publication Number Publication Date
JPH05201712A JPH05201712A (ja) 1993-08-10
JPH0611644B2 true JPH0611644B2 (ja) 1994-02-16

Family

ID=27407080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4151368A Expired - Lifetime JPH0611644B2 (ja) 1981-12-30 1992-05-19 鎖状リン材料

Country Status (23)

Country Link
JP (1) JPH0611644B2 (enrdf_load_stackoverflow)
KR (1) KR840003144A (enrdf_load_stackoverflow)
AU (1) AU553091B2 (enrdf_load_stackoverflow)
BR (1) BR8207569A (enrdf_load_stackoverflow)
CA (1) CA1215521A (enrdf_load_stackoverflow)
CH (3) CH663609A5 (enrdf_load_stackoverflow)
DE (1) DE3247869A1 (enrdf_load_stackoverflow)
DK (1) DK578782A (enrdf_load_stackoverflow)
ES (2) ES518662A0 (enrdf_load_stackoverflow)
FR (1) FR2530866B1 (enrdf_load_stackoverflow)
GB (2) GB2113663B (enrdf_load_stackoverflow)
GR (1) GR78374B (enrdf_load_stackoverflow)
HK (2) HK38288A (enrdf_load_stackoverflow)
IE (1) IE53683B1 (enrdf_load_stackoverflow)
IL (1) IL67565A0 (enrdf_load_stackoverflow)
IT (1) IT1210712B (enrdf_load_stackoverflow)
MA (1) MA19673A1 (enrdf_load_stackoverflow)
NL (1) NL8205055A (enrdf_load_stackoverflow)
NO (1) NO824406L (enrdf_load_stackoverflow)
PL (1) PL239879A1 (enrdf_load_stackoverflow)
PT (1) PT76047B (enrdf_load_stackoverflow)
SE (4) SE8207299L (enrdf_load_stackoverflow)
SG (1) SG97687G (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
AU2992784A (en) * 1983-06-29 1985-01-03 Stauffer Chemical Company Passivation and insulation of iii-v devices with pnictides
DK318184A (da) * 1984-02-17 1985-08-18 Stauffer Chemical Co Hoejvakuumaflejringsprocesser under anvendelse af et kontinuerligt pnictidleveringssystem
AU2993684A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vapour deposition of pnictides
AU2993784A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vacuum deposition of pnictides
GB9010000D0 (en) * 1990-05-03 1990-06-27 Stc Plc Phosphide films
JP4958076B2 (ja) * 2008-01-25 2012-06-20 住友電気工業株式会社 樹脂組成物中の赤リンの分析方法
GB201601838D0 (en) 2016-02-02 2016-03-16 Univ Surrey A composition
KR102307523B1 (ko) * 2019-10-30 2021-09-30 울산과학기술원 폴리포스파이드 전구체의 제조방법, 결정성 적린 박막의 제조방법 및 전자 소자 응용
CN111170292B (zh) * 2019-11-04 2023-09-29 湖北大学 一种纤维相红磷纳米粒子的制备方法及其应用
CN113932082A (zh) * 2021-10-11 2022-01-14 宁夏大学 电池片扩散工艺的磷源传输装置以及包含其的温度控制系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397038A (en) * 1964-11-30 1968-08-13 Hooker Chemical Corp Manufacture of a reactive trisodium phosphide
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
GB2055774B (en) * 1979-04-09 1983-02-02 Plessey Co Ltd Methods of producing semiconductor materials

Also Published As

Publication number Publication date
CH672778A5 (enrdf_load_stackoverflow) 1989-12-29
FR2530866B1 (fr) 1985-07-12
KR840003144A (ko) 1984-08-13
GB2172585B (en) 1987-01-28
SE8401510L (sv) 1984-03-19
SE8401509D0 (sv) 1984-03-19
ES8600164A1 (es) 1985-10-01
DE3247869A1 (de) 1983-08-18
IE823057L (en) 1983-06-30
IE53683B1 (en) 1989-01-04
NO824406L (no) 1983-07-01
ES530659A0 (es) 1985-10-01
CH663609A5 (de) 1987-12-31
SE8401511L (sv) 1984-03-19
PL239879A1 (en) 1984-03-26
IT8249774A0 (it) 1982-12-30
JPH05201712A (ja) 1993-08-10
PT76047B (en) 1985-11-18
ES8406000A1 (es) 1984-06-16
GB2113663B (en) 1986-10-29
AU9158882A (en) 1983-07-07
BR8207569A (pt) 1983-10-25
MA19673A1 (fr) 1983-07-01
CA1215521A (en) 1986-12-23
SE8401510D0 (sv) 1984-03-19
SE8207299L (sv) 1983-07-01
CH666252A5 (de) 1988-07-15
SG97687G (en) 1988-06-03
GR78374B (enrdf_load_stackoverflow) 1984-09-26
GB8516583D0 (en) 1985-08-07
HK38288A (en) 1988-06-03
SE8401509L (sv) 1984-03-19
NL8205055A (nl) 1983-07-18
SE8401511D0 (sv) 1984-03-19
AU553091B2 (en) 1986-07-03
GB2172585A (en) 1986-09-24
FR2530866A1 (fr) 1984-01-27
HK38188A (en) 1988-06-03
IT1210712B (it) 1989-09-20
SE8207299D0 (sv) 1982-12-21
PT76047A (en) 1983-01-01
GB2113663A (en) 1983-08-10
DK578782A (da) 1983-07-01
IL67565A0 (en) 1983-05-15
ES518662A0 (es) 1984-06-16

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