HK125795A - Overvoltage protection circuit for mos components - Google Patents
Overvoltage protection circuit for mos componentsInfo
- Publication number
- HK125795A HK125795A HK125795A HK125795A HK125795A HK 125795 A HK125795 A HK 125795A HK 125795 A HK125795 A HK 125795A HK 125795 A HK125795 A HK 125795A HK 125795 A HK125795 A HK 125795A
- Authority
- HK
- Hong Kong
- Prior art keywords
- protection circuit
- overvoltage protection
- oxide transistor
- mos components
- mos
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000012421 spiking Methods 0.000 abstract 1
- 230000003685 thermal hair damage Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3907523A DE3907523A1 (de) | 1989-03-08 | 1989-03-08 | Schutzschaltung gegen ueberspannungen fuer mos-bauelemente |
Publications (1)
Publication Number | Publication Date |
---|---|
HK125795A true HK125795A (en) | 1995-08-11 |
Family
ID=6375854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK125795A HK125795A (en) | 1989-03-08 | 1995-08-03 | Overvoltage protection circuit for mos components |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0462108B1 (xx) |
JP (1) | JP2797259B2 (xx) |
KR (1) | KR0165897B1 (xx) |
AT (1) | ATE103417T1 (xx) |
DE (2) | DE3907523A1 (xx) |
HK (1) | HK125795A (xx) |
WO (1) | WO1990010952A1 (xx) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4118441A1 (de) * | 1991-06-05 | 1992-12-10 | Siemens Ag | Schaltungsanordnung zum schutz gegen ueberspannungen an eingaengen integrierter mos-schaltkreise |
EP0549320B1 (en) * | 1991-12-27 | 2000-10-04 | Texas Instruments Incorporated | Apparatus for ESD protection |
DE59308352D1 (de) * | 1993-05-04 | 1998-05-07 | Siemens Ag | Integrierte Halbleiterschaltung mit einem Schutzmittel |
GB2336241B (en) * | 1998-01-15 | 2000-06-14 | United Microelectronics Corp | Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5715459A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor integrated circuit |
US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
-
1989
- 1989-03-08 DE DE3907523A patent/DE3907523A1/de not_active Withdrawn
-
1990
- 1990-01-18 EP EP90901539A patent/EP0462108B1/de not_active Expired - Lifetime
- 1990-01-18 AT AT90901539T patent/ATE103417T1/de not_active IP Right Cessation
- 1990-01-18 DE DE90901539T patent/DE59005132D1/de not_active Expired - Fee Related
- 1990-01-18 WO PCT/DE1990/000027 patent/WO1990010952A1/de active IP Right Grant
- 1990-01-18 KR KR1019910701053A patent/KR0165897B1/ko not_active IP Right Cessation
- 1990-01-18 JP JP2501697A patent/JP2797259B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-03 HK HK125795A patent/HK125795A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0462108A1 (de) | 1991-12-27 |
ATE103417T1 (de) | 1994-04-15 |
JP2797259B2 (ja) | 1998-09-17 |
EP0462108B1 (de) | 1994-03-23 |
WO1990010952A1 (de) | 1990-09-20 |
KR920702025A (ko) | 1992-08-12 |
DE59005132D1 (de) | 1994-04-28 |
DE3907523A1 (de) | 1990-09-20 |
JPH04504030A (ja) | 1992-07-16 |
KR0165897B1 (ko) | 1998-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20040118 |
|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |