HK1220287A1 - 可调节的质量分辨孔 - Google Patents

可调节的质量分辨孔 Download PDF

Info

Publication number
HK1220287A1
HK1220287A1 HK16108163.6A HK16108163A HK1220287A1 HK 1220287 A1 HK1220287 A1 HK 1220287A1 HK 16108163 A HK16108163 A HK 16108163A HK 1220287 A1 HK1220287 A1 HK 1220287A1
Authority
HK
Hong Kong
Prior art keywords
ions
opening
ion beam
mra
ion
Prior art date
Application number
HK16108163.6A
Other languages
English (en)
Chinese (zh)
Inventor
Glenn E. LANE
Original Assignee
Glenn Lane Family Limited Liability Limited Partnership
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Glenn Lane Family Limited Liability Limited Partnership filed Critical Glenn Lane Family Limited Liability Limited Partnership
Publication of HK1220287A1 publication Critical patent/HK1220287A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/06—Electron- or ion-optical arrangements
    • H01J49/062—Ion guides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
HK16108163.6A 2013-03-15 2014-03-17 可调节的质量分辨孔 HK1220287A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361800855P 2013-03-15 2013-03-15
US61/800,855 2013-03-15
PCT/US2014/030744 WO2014145898A2 (en) 2013-03-15 2014-03-17 Adjustable mass resolving aperture

Publications (1)

Publication Number Publication Date
HK1220287A1 true HK1220287A1 (zh) 2017-04-28

Family

ID=51521619

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16108163.6A HK1220287A1 (zh) 2013-03-15 2014-03-17 可调节的质量分辨孔

Country Status (7)

Country Link
US (4) US9401260B2 (https=)
EP (1) EP2973663B1 (https=)
JP (1) JP6500009B2 (https=)
KR (1) KR20150130557A (https=)
CN (1) CN105247660B (https=)
HK (1) HK1220287A1 (https=)
WO (1) WO2014145898A2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201635326A (zh) * 2014-12-26 2016-10-01 艾克塞利斯科技公司 在具有射束減速的離子植入器中用於射束角度調整的系統及方法
US9685298B1 (en) * 2016-02-01 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for contamination control in ion beam apparatus
US9953801B1 (en) * 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US11049691B2 (en) * 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
US11469108B2 (en) * 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
JP2020048607A (ja) * 2018-09-21 2020-04-02 株式会社日立製作所 粒子線治療システムおよびその拡張方法
JP7019544B2 (ja) * 2018-10-29 2022-02-15 三菱電機株式会社 イオン注入装置
WO2021011415A1 (en) * 2019-07-12 2021-01-21 Leco Corporation Methods and systems for multi-pass encoded frequency pushing
US11189460B1 (en) * 2020-11-06 2021-11-30 Applied Materials, Inc. System, apparatus and method for variable length electrode in linear accelerator
US11574796B1 (en) * 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
KR20240090158A (ko) 2021-10-01 2024-06-21 샤인 테크놀로지스 엘엘씨 이온 수집을 위한 섬유질 격자를 갖는 이온 생성 시스템
KR102816188B1 (ko) * 2022-12-13 2025-06-11 주식회사 아바코 다중 이온 소스를 이용한 이온 주입 시스템

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3031396A (en) 1957-09-11 1962-04-24 Oscar A Anderson Stabilized pinch machine
LU38623A1 (https=) 1959-05-28
NL294850A (https=) * 1962-07-05
US3191092A (en) 1962-09-20 1965-06-22 William R Baker Plasma propulsion device having special magnetic field
US3643123A (en) 1968-10-28 1972-02-15 Trw Inc Plasma containment device
US3713043A (en) 1969-12-19 1973-01-23 Yissum Res Dev Co Gas lasers with electrically-conductive plasma tube
US3624240A (en) 1970-03-24 1971-11-30 Atomic Energy Commission Feedback stabilization of a magnetically confined plasma
US3939354A (en) 1973-02-02 1976-02-17 Jersey Nuclear-Avco Isotopes, Inc. Method and apparatus for separation of ions from a plasma
US3992625A (en) 1973-12-27 1976-11-16 Jersey Nuclear-Avco Isotopes, Inc. Method and apparatus for extracting ions from a partially ionized plasma using a magnetic field gradient
US4636287A (en) 1974-04-29 1987-01-13 Jersey Nuclear-Avco Isotopes, Inc. Frequency swept laser system for isotope excitation
IL47139A (en) 1974-05-13 1977-07-31 Jersey Nuclear Avco Isotopes Method and apparatus for impact ionization of particles
US4257013A (en) 1974-06-25 1981-03-17 Jersey Nuclear-Avco Isotopes, Inc. Adiabatic inversion for selective excitation
US4172008A (en) 1977-08-23 1979-10-23 Dubble Whammy, Inc. Nuclear fusion reactor
US4397809A (en) 1979-03-16 1983-08-09 Energy Profiles, Inc. Charged particle machine
CH649231A5 (de) 1980-10-28 1985-05-15 Hans Christoph Siegmann Prof D Verfahren zum elektrischen aufladen von schwebeteilchen in gasen.
US4434130A (en) 1980-11-03 1984-02-28 Energy Profiles, Inc. Electron space charge channeling for focusing ion beams
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
US4728796A (en) 1986-04-10 1988-03-01 Medical College Of Wisconsin Method for ionization of polymers
JPH01132038A (ja) * 1987-11-18 1989-05-24 Toshiba Corp 質量分析装置
USH693H (en) 1989-02-24 1989-10-03 The United States Of America As Represented By The Secretary Of The Army PYX twister with superconducting confinement
US4893103A (en) 1989-02-24 1990-01-09 The United States Of America As Represented By The Secretary Of The Army Superconducting PYX structures
US4859973A (en) 1989-03-23 1989-08-22 The United States Of America As Represented By The Secretary Of The Army Superconducting shielded PYX PPM stacks
JPH03219544A (ja) * 1989-06-06 1991-09-26 Mitsubishi Electric Corp 荷電粒子注入装置
US5130552A (en) * 1990-12-17 1992-07-14 Applied Materials, Inc. Improved ion implantation using a variable mass resolving system
DE69205098T2 (de) 1991-07-23 1996-02-29 Nissin Electric Co Ltd Ionenquelle mit Massentrennvorrichtung.
JPH05267888A (ja) 1992-03-17 1993-10-15 Ngk Insulators Ltd 円筒状超電導磁気シールド体
US5306920A (en) 1992-11-23 1994-04-26 Motorola, Inc. Ion implanter with beam resolving apparatus and method for implanting ions
US5359621A (en) 1993-05-11 1994-10-25 General Atomics High efficiency gas laser with axial magnetic field and tunable microwave resonant cavity
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
GB2344214B (en) 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved beam definition
WO1997020620A1 (en) 1995-12-07 1997-06-12 The Regents Of The University Of California Improvements in method and apparatus for isotope enhancement in a plasma apparatus
US5917393A (en) 1997-05-08 1999-06-29 Northrop Grumman Corporation Superconducting coil apparatus and method of making
US6451207B1 (en) 1997-06-04 2002-09-17 Dexter Magnetic Technologies, Inc. Magnetic cell separation device
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
GB2339069B (en) 1998-07-01 2003-03-26 Applied Materials Inc Ion implantation beam monitor
EP1124624B1 (en) 1998-09-25 2010-03-10 The State Of Oregon Acting By And Through The Oregon Stateboard Of Higher Education On Behalf Of The University Of Oregon Tandem time-of-flight mass spectrometer
US6322706B1 (en) 1999-07-14 2001-11-27 Archimedes Technology Group, Inc. Radial plasma mass filter
US6180085B1 (en) 2000-01-18 2001-01-30 Mallinckrodt Inc. Dyes
KR100353406B1 (ko) 2000-01-25 2002-09-18 주식회사 하이닉스반도체 위상 반전 마스크 및 그 제조 방법
US6525326B1 (en) * 2000-09-01 2003-02-25 Axcelis Technologies, Inc. System and method for removing particles entrained in an ion beam
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
EP1352411B1 (en) * 2001-01-18 2005-03-23 Varian Semiconductor Equipment Associates Inc. Adjustable conductance limiting aperture for ion implanters
US6398920B1 (en) 2001-02-21 2002-06-04 Archimedes Technology Group, Inc. Partially ionized plasma mass filter
US6784424B1 (en) 2001-05-26 2004-08-31 Ross C Willoughby Apparatus and method for focusing and selecting ions and charged particles at or near atmospheric pressure
US6585891B1 (en) 2002-02-28 2003-07-01 Archimedes Technology Group, Inc. Plasma mass separator using ponderomotive forces
JP3713683B2 (ja) 2002-03-05 2005-11-09 住友イートンノバ株式会社 イオンビームの質量分離フィルタとその質量分離方法及びこれを使用するイオン源
US7095019B1 (en) 2003-05-30 2006-08-22 Chem-Space Associates, Inc. Remote reagent chemical ionization source
US7253406B1 (en) 2002-06-01 2007-08-07 Chem-Space Associates, Incorporated Remote reagent chemical ionization source
US6726844B2 (en) 2002-06-12 2004-04-27 Archimedes Technology Group, Inc. Isotope separator
US6686595B2 (en) 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US6864773B2 (en) 2003-04-04 2005-03-08 Applied Materials, Inc. Variable field magnet apparatus
US8639489B2 (en) 2003-11-10 2014-01-28 Brooks Automation, Inc. Methods and systems for controlling a semiconductor fabrication process
US7112789B2 (en) * 2004-05-18 2006-09-26 White Nicholas R High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
US20060108931A1 (en) 2004-11-24 2006-05-25 Samsung Electronics Co., Ltd. Electromagnetic accelerator having nozzle part
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
US7312444B1 (en) 2005-05-24 2007-12-25 Chem - Space Associates, Inc. Atmosperic pressure quadrupole analyzer
SG171606A1 (en) 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
GB2438893B (en) 2006-06-09 2010-10-27 Applied Materials Inc Ion beams in an ion implanter
JP5296341B2 (ja) * 2006-07-14 2013-09-25 ティーイーエル・エピオン・インコーポレーテッド ガスクラスターイオンビーム加工装置における粒子汚染を低減するための装置および方法
US7227160B1 (en) 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US7619228B2 (en) * 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US7479644B2 (en) 2006-10-30 2009-01-20 Applied Materials, Inc. Ion beam diagnostics
US7838849B2 (en) 2007-10-24 2010-11-23 Applied Materials, Inc. Ion implanters
US7700925B2 (en) 2007-12-28 2010-04-20 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a multimode ion source
US7928413B2 (en) 2008-01-03 2011-04-19 Applied Materials, Inc. Ion implanters
US7994488B2 (en) 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US8501624B2 (en) 2008-12-04 2013-08-06 Varian Semiconductor Equipment Associates, Inc. Excited gas injection for ion implant control
US8466431B2 (en) 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
GB2470599B (en) 2009-05-29 2014-04-02 Thermo Fisher Scient Bremen Charged particle analysers and methods of separating charged particles
US8278634B2 (en) 2009-06-08 2012-10-02 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
WO2011053922A1 (en) 2009-10-31 2011-05-05 Glenn Lane Wireless transmission of energy through concentric laser-induced plasma channels in atmosphere
US8604443B2 (en) 2009-11-13 2013-12-10 Varian Semiconductor Equipment Associates, Inc. System and method for manipulating an ion beam
EP2553686A4 (en) * 2010-03-29 2015-01-21 Glenn Lane Family Ltd Liability Ltd Partnership SPATIAL SEGREGATION OF PLASMA COMPONENTS
US8436318B2 (en) 2010-04-05 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for controlling the temperature of an RF ion source window
US8604418B2 (en) 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
US8471476B2 (en) 2010-10-08 2013-06-25 Varian Semiconductor Equipment Associates, Inc. Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
US8324592B2 (en) 2010-11-02 2012-12-04 Twin Creeks Technologies, Inc. Ion source and a method of generating an ion beam using an ion source
US8669517B2 (en) 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
US8637838B2 (en) 2011-12-13 2014-01-28 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
CN202730223U (zh) * 2012-08-03 2013-02-13 晋谱（福建）光电科技有限公司 离子溅射镀膜装置
JP5959413B2 (ja) * 2012-11-13 2016-08-02 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9496117B2 (en) * 2014-01-20 2016-11-15 Varian Semiconductor Equipment Associates, Inc. Two-dimensional mass resolving slit mechanism for semiconductor processing systems
US9953801B1 (en) * 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion

Also Published As

Publication number Publication date
CN105247660A (zh) 2016-01-13
JP2016520951A (ja) 2016-07-14
JP6500009B2 (ja) 2019-04-10
EP2973663B1 (en) 2018-04-18
WO2014145898A3 (en) 2015-02-26
US20140261173A1 (en) 2014-09-18
CN105247660B (zh) 2018-06-12
US10083815B2 (en) 2018-09-25
WO2014145898A2 (en) 2014-09-18
EP2973663A2 (en) 2016-01-20
US20160240349A1 (en) 2016-08-18
US20160240350A1 (en) 2016-08-18
US9496120B2 (en) 2016-11-15
EP2973663A4 (en) 2016-10-05
US9401260B2 (en) 2016-07-26
KR20150130557A (ko) 2015-11-23
US20190172679A1 (en) 2019-06-06

Similar Documents

Publication Publication Date Title
CN105247660B (zh) 可调节的质量分辨孔
US6768120B2 (en) Focused electron and ion beam systems
US7176469B2 (en) Negative ion source with external RF antenna
TWI878224B (zh) 緻密高能離子植入系統及用於生成高能離子射束的設備及方法
JP6469682B2 (ja) 任意の長さのリボン状ビームイオン源
WO1995034908A1 (en) Magnetic scanning of heavy ion beams
US9576767B2 (en) Focused ion beam systems and methods of operation
EP2553686A1 (en) Spatial segregation of plasma components
KR20230038576A (ko) 이온 주입 시스템, 이를 동작시키는 방법 및 선형 가속기
Faircloth Ion sources for high-power hadron accelerators
JP2004508668A (ja) イオンビームの流れに乗った粒子を除去するためのシステムおよび方法
KR100903295B1 (ko) 이온빔 발생 장치 및 이온 빔 발생 방법
KR102334205B1 (ko) 기판 전하 중성화를 위한 핀치된 플라즈마 브리지 플러드 건
US20090166555A1 (en) RF electron source for ionizing gas clusters
Faircloth Particle sources
Gordon Low-energy ion beamline-scattering apparatus with application to charge exchange collisions at surfaces
Bräuning et al. Charge transfer in Li2++ He2+ and Li2++ Li3+ collisions
Faircloth arXiv: Particle Sources
Sakai et al. Change of diborane ion species depending on the magnitude of magnetic field using 100 MHz very high frequency discharge
Hahto Development of negative ion sources for accelerator, fusion and semiconductor manufacturing applications
Boonyawan et al. Characteristics of a 13.56 MHz radiofrequency-driven multicusp ion source
DAVID Positive Heavy-Ion Sources
Schmidt et al. Ion Beam Technology
Labrecque Development of radiation resistant plasma sources for rare isotopes production
Soloshenko et al. Space charge lens for focusing of negative ion beams