HK1215329A1 - 元件及其製造方法 - Google Patents

元件及其製造方法

Info

Publication number
HK1215329A1
HK1215329A1 HK16103129.0A HK16103129A HK1215329A1 HK 1215329 A1 HK1215329 A1 HK 1215329A1 HK 16103129 A HK16103129 A HK 16103129A HK 1215329 A1 HK1215329 A1 HK 1215329A1
Authority
HK
Hong Kong
Prior art keywords
led
manufacturing
same
led element
same led
Prior art date
Application number
HK16103129.0A
Other languages
English (en)
Inventor
鈴木敦志
難波江宏
‧埃克曼
Original Assignee
El-Seed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by El-Seed Corp filed Critical El-Seed Corp
Publication of HK1215329A1 publication Critical patent/HK1215329A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
HK16103129.0A 2013-02-12 2016-03-17 元件及其製造方法 HK1215329A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013025014 2013-02-12
PCT/JP2014/052894 WO2014126016A1 (ja) 2013-02-12 2014-02-07 Ｌｅｄ素子及びその製造方法

Publications (1)

Publication Number Publication Date
HK1215329A1 true HK1215329A1 (zh) 2016-08-19

Family

ID=51354019

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16103129.0A HK1215329A1 (zh) 2013-02-12 2016-03-17 元件及其製造方法

Country Status (6)

Country Link
US (1) US20160005923A1 (zh)
JP (1) JPWO2014126016A1 (zh)
CN (1) CN104969366A (zh)
HK (1) HK1215329A1 (zh)
TW (1) TWI611595B (zh)
WO (1) WO2014126016A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6436694B2 (ja) * 2014-09-17 2018-12-12 住友化学株式会社 窒化物半導体テンプレートの製造方法
DE102014115740A1 (de) 2014-10-29 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN104538514B (zh) * 2014-12-31 2017-07-11 杭州士兰微电子股份有限公司 倒装led芯片结构及其制作方法
JP7087796B2 (ja) * 2017-08-04 2022-06-21 住友大阪セメント株式会社 分散液、組成物、封止部材、発光装置、照明器具および表示装置
US10304993B1 (en) * 2018-01-05 2019-05-28 Epistar Corporation Light-emitting device and method of manufacturing the same
CN112670403B (zh) * 2019-10-16 2024-04-30 联华电子股份有限公司 半导体结构
CN113054064B (zh) * 2021-03-22 2022-04-22 华南师范大学 高外量子效率的深紫外led及其制备方法
WO2023190493A1 (ja) * 2022-03-31 2023-10-05 住友大阪セメント株式会社 分散液、組成物、封止部材、発光装置、照明器具、表示装置および分散液の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221698A (ja) * 1999-01-29 2000-08-11 Sony Corp 電子装置の製造方法
TWI406101B (zh) * 2005-03-01 2013-08-21 Univ Meijo ２光束干涉曝光裝置、２光束干涉曝光方法、半導體發光元件的製造方法、及半導體發光元件
JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
JP5379434B2 (ja) * 2008-09-22 2013-12-25 学校法人 名城大学 発光素子用サファイア基板の製造方法
CN102484183B (zh) * 2009-09-07 2015-01-14 崇高种子公司 半导体发光元件及其制造方法
JP5486883B2 (ja) * 2009-09-08 2014-05-07 東京エレクトロン株式会社 被処理体の処理方法
JP2012216753A (ja) * 2011-03-30 2012-11-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP6056150B2 (ja) * 2011-04-08 2017-01-11 日亜化学工業株式会社 半導体発光素子
JP5142236B1 (ja) * 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法

Also Published As

Publication number Publication date
WO2014126016A1 (ja) 2014-08-21
JPWO2014126016A1 (ja) 2017-02-02
CN104969366A (zh) 2015-10-07
US20160005923A1 (en) 2016-01-07
TWI611595B (zh) 2018-01-11
TW201432938A (zh) 2014-08-16

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