HK1215328A1 - 元件 - Google Patents

元件

Info

Publication number
HK1215328A1
HK1215328A1 HK16103127.2A HK16103127A HK1215328A1 HK 1215328 A1 HK1215328 A1 HK 1215328A1 HK 16103127 A HK16103127 A HK 16103127A HK 1215328 A1 HK1215328 A1 HK 1215328A1
Authority
HK
Hong Kong
Prior art keywords
led
led element
element led
Prior art date
Application number
HK16103127.2A
Other languages
English (en)
Inventor
大矢昌輝難波江宏鈴木敦志近藤俊行森美登里
Original Assignee
El-Seed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by El-Seed Corp filed Critical El-Seed Corp
Publication of HK1215328A1 publication Critical patent/HK1215328A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
HK16103127.2A 2013-12-03 2016-03-17 元件 HK1215328A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013249989A JP5553292B1 (ja) 2013-12-03 2013-12-03 Led素子
PCT/JP2014/063168 WO2015083386A1 (ja) 2013-12-03 2014-05-19 Led素子

Publications (1)

Publication Number Publication Date
HK1215328A1 true HK1215328A1 (zh) 2016-08-19

Family

ID=51416834

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16103127.2A HK1215328A1 (zh) 2013-12-03 2016-03-17 元件

Country Status (8)

Country Link
US (1) US9634188B2 (zh)
EP (1) EP2991125B1 (zh)
JP (1) JP5553292B1 (zh)
KR (1) KR20160093544A (zh)
CN (1) CN105264677B (zh)
HK (1) HK1215328A1 (zh)
TW (1) TW201523918A (zh)
WO (1) WO2015083386A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5553292B1 (ja) * 2013-12-03 2014-07-16 エルシード株式会社 Led素子
JP5740031B2 (ja) * 2014-05-12 2015-06-24 エルシード株式会社 Led素子
JP6436694B2 (ja) * 2014-09-17 2018-12-12 住友化学株式会社 窒化物半導体テンプレートの製造方法
TW201709317A (zh) * 2015-04-15 2017-03-01 El-Seed Corp Led元件
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
KR102399464B1 (ko) * 2017-06-27 2022-05-19 주식회사 루멘스 엘이디 패널
CN108054259A (zh) * 2017-12-13 2018-05-18 苏州吉赛电子科技有限公司 一种led芯片及其制作方法
US10304993B1 (en) * 2018-01-05 2019-05-28 Epistar Corporation Light-emitting device and method of manufacturing the same
WO2021164854A1 (en) * 2020-02-18 2021-08-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
DE102021129107A1 (de) * 2021-11-09 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauteil
JP2023076901A (ja) * 2021-11-24 2023-06-05 国立大学法人京都大学 発光ダイオード素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964421A (ja) * 1995-08-25 1997-03-07 Nichia Chem Ind Ltd 窒化物半導体発光ダイオード
US20150295154A1 (en) * 2005-02-03 2015-10-15 Epistar Corporation Light emitting device and manufacturing method thereof
CN100555689C (zh) * 2006-06-15 2009-10-28 夏普株式会社 氮化物半导体发光元件及其制造方法
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
KR101539246B1 (ko) * 2008-11-10 2015-07-24 삼성전자 주식회사 광추출 효율이 향상된 발광 장치의 제조 방법 및 그 방법으로 제조된 발광 장치
WO2011027418A1 (ja) * 2009-09-01 2011-03-10 株式会社 東芝 半導体発光素子及び半導体発光装置
US8941136B2 (en) * 2009-09-07 2015-01-27 El-Seed Corporation Semiconductor light emitting element
JP5017399B2 (ja) * 2010-03-09 2012-09-05 株式会社東芝 半導体発光装置および半導体発光装置の製造方法
CA2883101A1 (en) * 2011-09-06 2013-03-14 Trilogy Environmental Systems Inc. Hybrid desalination system
US20130140592A1 (en) * 2011-12-01 2013-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light emitting diode with improved light extraction efficiency and methods of manufacturing same
JP2013232478A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置及びその製造方法
JP5814968B2 (ja) * 2013-03-22 2015-11-17 株式会社東芝 窒化物半導体発光装置
US9466763B2 (en) * 2013-09-03 2016-10-11 Sharp Kabushiki Kaisha Semiconductor light-emitting element
JP5553292B1 (ja) * 2013-12-03 2014-07-16 エルシード株式会社 Led素子
JP2015192100A (ja) * 2014-03-28 2015-11-02 豊田合成株式会社 発光素子および発光素子の製造方法
KR20160069598A (ko) * 2014-12-08 2016-06-17 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자의 제조방법

Also Published As

Publication number Publication date
EP2991125A4 (en) 2017-01-04
CN105264677A (zh) 2016-01-20
US9634188B2 (en) 2017-04-25
KR20160093544A (ko) 2016-08-08
EP2991125B1 (en) 2018-04-25
WO2015083386A1 (ja) 2015-06-11
US20160111599A1 (en) 2016-04-21
JP5553292B1 (ja) 2014-07-16
CN105264677B (zh) 2018-12-14
EP2991125A1 (en) 2016-03-02
TW201523918A (zh) 2015-06-16

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